An integrated circuit chip and flat capacitor assembly are connected with short bonding wires to reduce electrical noise. A flat chip capacitor is coupled to the chip and includes a first electrode, a second electrode and a dielectric layer disposed between the electrodes. The ground and power bonding pads of an integrated circuit chip are coupled to a number of terminals arranged in a row near the outer edge of the capacitor, where each of the terminals is coupled to one of the electrodes. The terminals of the capacitor are connected to a number of package leads of a lead frame or a other integrated circuit package. The invention includes embodiments in which the chip is placed on top of the capacitor, the capacitor is placed on top of the chip, and a flex circuit of a micro ball grid array is placed on a capacitor which is positioned on a chip.
A semiconductor wafer includes a plurality of passive device units, which are electrically connected across scribe lines. Passive device chips in the wafer that are adjacent to one another in a first direction are electrically connected in parallel, while passive device units adjacent to one another in a second direction are connected in series. By selecting a number of adjacent passive device units extending in the first and second direction, and separating the selected units from the wafer along the corresponding scribe lines, a passive device chip having a desired electrical characteristic (e.g., capacitance or resistance) can be obtained. Such passive device chips may be assembled in a semiconductor package where they are electrically connected to active devices.
A semiconductor device designed to facilitate testing. Superimposed first and second semiconductor chips each include a plurality of internal terminals, an external terminal, and a plurality of transistors. A plurality of wires connect the internal terminals, the transistors, and the external terminals of the first and second semiconductor chips in series.
Stacked die that are separated by an overlaying chip capacitor with a plate bonded to the bottom of the top die with a conductive adhesive and the capacitor shell bonded to the top of the lower die with a non-conductive adhesive. The lower die is attached to a substrate using a conductive adhesive. Conductors extend from edge terminals on the substrate to edge terminals on the lower die, and conductors extend from the lower die terminals to the capacitor that are tiered to provide space between the die for the wires and connections. A second overlaying capacitor is attached to the top of the upper die with non-conducive adhesive. Pads on the capacitor are connected by conductors to edge pads on the die and conductors extend from the pads to pads on the substrate.
A semiconductor wafer includes a plurality of passive device units, which are electrically connected across scribe lines. Passive device chips in the wafer that are adjacent to one another in a first direction are electrically connected in parallel, while passive device units adjacent to one another in a second direction are connected in series. By selecting a number of adjacent passive device units extending in the first and second direction, and separating the selected units from the wafer along the corresponding scribe lines, a passive device chip having a desired electrical characteristic (e.g., capacitance or resistance) can be obtained. Such passive device chips may be assembled in a semiconductor package where they are electrically connected to active devices.
A BGA package comprises a chip with an array pad design disposed on the top surface of a substrate. The chip has a plurality of bonding pads located about the periphery thereof. The bonding pads of the chip are positioned in three rows, an inner row, a middle row, and an outer row along the sides of the chip. All of the power supply pads and ground pads are adjacent to one another and designed in the outer row of the bonding pads, and the I/O pads are designed in the outer row, the middle row and the inner row of the bonding pads. The outer row, middle row, and the inner row of the bonding pads are electrically connected to the substrate through three tiers of bonding wires with different loop height, respectively.
