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| United States Patent | 5536323 |
| Link to this page | http://www.wikipatents.com/5536323.html |
| Inventor(s) | Kirlin; Peter S. (Bethel, CT), Binder; Robin L. (Bethlehem, CT), Gardiner; Robin A. (Bethel, CT), Buskirk; Peter V. (Newtown, CT), Zhang; Jiming (Danbury, CT), Stauf; Gregory (New Milford, CT) |
| Abstract | A process and apparatus for delivering an involatile reagent in gaseous
form, wherein an involatile reagent source liquid is flash vaporized on a
vaporization matrix structure at elevated temperature. A carrier gas may
be flowed past the flash vaporzation matrix structure to yield a carrier
gas mixture containing the flash vaporized source reagent. The matrix
structure preferably has a high surface-to-volume ratio, and may sutiably
comprise a foraminous matrix element such as screen mesh onto which the
reagent source liquid is distributed for flash vaporization. The invention
is particularly useful for delivery of Group II reagents and compounds and
complexes of early transition metals such as zirconium and hafnium, and
may be usefully employed with Group II beta-diketonate source layers,
e.g., of YBaCuO, BiSrCaCuO, and TlBaCaCuO types, as well as for forming
interlayers of Group II metal fluorides between superconductor or gallium
arsenide overlayers, and for depositing thin films of photonic and
ferroelectric materials, e.g., BaTiO.sub.3, Ba.sub.x Sr.sub.1-x Nb.sub.2
O.sub.6, and PbZr.sub.1-x Ti.sub.x O.sub.3. |
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Title Information  |
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Drawing from US Patent 5536323 |
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Apparatus for flash vaporization delivery of reagents |
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| Inventor |
Kirlin; Peter S. (Bethel, CT) , Binder; Robin L. (Bethlehem, CT) , Gardiner; Robin A. (Bethel, CT) , Buskirk; Peter V. (Newtown, CT) , Zhang; Jiming (Danbury, CT) , Stauf; Gregory (New Milford, CT) |
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| Publication Date |
July 16, 1996 |
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| Filing Date |
July 25, 1994 |
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| Parent Case |
This is a File Wrapper Continuation of U.S. application Ser. No.
07/927,134, filed on Aug. 7, 1992, which in turn is a continuation-in-part
of U.S. application Ser. No. 07/807,807 filed Dec. 13, 1991 in the names
of Peter S. Kirlin, Robin L. Binder, and Robin A. Gardiner and issued Apr.
20, 1993 as U.S. Pat. No. 5,204,314, which is a continuation of U.S.
application Ser. No. 07/549,389 filed Jul. 6, 1990 in the same names, now
abandoned. |
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Title Information  |
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References  |
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| *references marked with an asterisk below are user-added references |
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U.S. References |
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| | Reference | Relevancy | Comments | Reference | Relevancy | Comments | 5259995 Metalis
Nov,1993 |      Your vote accepted [0 after 0 votes] | | 5204314 Kirlin et al.
Apr,1993 |      Your vote accepted [0 after 0 votes] | | 5097800 Shaw
Mar,1992 |      Your vote accepted [0 after 0 votes] | | 4954371 Yializis
Sep,1990 |      Your vote accepted [0 after 0 votes] | | 2954330 Schmieding et al.
Sep,1990 |      Your vote accepted [0 after 0 votes] | | 4940693 Shappiro et al.
Jul,1990 |      Your vote accepted [0 after 0 votes] | | 4931425 Kimura et al.
Jun,1990 |      Your vote accepted [0 after 0 votes] | | 4935385 Biegelsen
Jun,1990 |      Your vote accepted [0 after 0 votes] | | 4915988 Erbil
Apr,1990 |      Your vote accepted [0 after 0 votes] | | 4908348 Hung et al.
Mar,1990 |      Your vote accepted [0 after 0 votes] | | 4882312 Mogro-Campero
Nov,1989 |      Your vote accepted [0 after 0 votes] | | 4845308 Womack, Jr. et al.
Jul,1989 |      Your vote accepted [0 after 0 votes] | | 4847469 Hofmann
Jul,1989 |      Your vote accepted [0 after 0 votes] | | 4842893 Yializis
Jun,1989 |      Your vote accepted [0 after 0 votes] | | 4883976 Magnus
May,1989 |      Your vote accepted [0 after 0 votes] | | 4804649 Sherif
Feb,1989 |      Your vote accepted [0 after 0 votes] | | 4735852 Osada
Apr,1988 |      Your vote accepted [0 after 0 votes] | | 4732110 Parsons
Mar,1988 |      Your vote accepted [0 after 0 votes] | | 4529427 French
Jul,1985 |      Your vote accepted [0 after 0 votes] | | 4501602 Miller et al.
Feb,1985 |      Your vote accepted [0 after 0 votes] | | 4288396 Ottestad
Sep,1981 |      Your vote accepted [0 after 0 votes] | | 4080926 Platakis et al.
Mar,1978 |      Your vote accepted [0 after 0 votes] | | 4036915 Lucero
Jul,1977 |      Your vote accepted [0 after 0 votes] | | 3978272 Donley
Aug,1976 |      Your vote accepted [0 after 0 votes] | | 3969449 Shires
Jul,1976 |      Your vote accepted [0 after 0 votes] | | 3894164 Dismukes et al.
Jul,1975 |      Your vote accepted [0 after 0 votes] | | 3823926 Bracich
Jul,1974 |      Your vote accepted [0 after 0 votes] | | 3659402 Alliger
May,1972 |      Your vote accepted [0 after 0 votes] | | 3549412 Frey, Jr. et al.
Dec,1970 |      Your vote accepted [0 after 0 votes] | | 3520416 Keedwell
Jul,1970 |      Your vote accepted [0 after 0 votes] | | 476274 Huck
Dec,1969 |      Your vote accepted [0 after 0 votes] | | 3404873 Orens
Oct,1968 |      Your vote accepted [0 after 0 votes] | | 3190262 Bakish
Jun,1965 |      Your vote accepted [0 after 0 votes] | | 2925329 Yost
Feb,1960 |      Your vote accepted [0 after 0 votes] | | 2801322 Weatherill
Jul,1957 |      Your vote accepted [0 after 0 votes] | | 2622184 Johneas
Dec,1952 |      Your vote accepted [0 after 0 votes] | | 2490547 Schraner
Dec,1949 |      Your vote accepted [0 after 0 votes] | | | | | |
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Foreign References |
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Other References |
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| | Reference | Relevancy | Comments | "Epitaxial Film Growths of Artificial (Bi-O)/(SR-Ca-Cu-O) Layered Structures," Fujita, J., et al, Apply. Phys. Lett. vol. 54, No. 23 Jun.,
1989 pp. 2364-2366.
. Apr,2007 |      Your vote accepted [0 after 0 votes] | | "High T.sub.c Oxide Superconductors," Maple M. B., Ed., MRS Bulletin, Jan. 1989, pp. 20-21.
. Apr,2007 |      Your vote accepted [0 after 0 votes] | | "Thin Films of Barium Fluoride Scintillator Deposited By Chemical Vapor Deposition," P. S. Kirlin, et al, Nyc. Inst. and Methods 261-264.
. Apr,2007 |      Your vote accepted [0 after 0 votes] | | "Chemical Vapor Deposition of YBa.sub.2 Cu.sub.3 O.sub.7 Using Metal Organic Chelates Precursors," Panson, A. J. et al, Appl. Phys. Lett., 53(18), 31 Oct. 1988 pp. 1756-1758.
. Apr,2007 |      Your vote accepted [0 after 0 votes] | | "Preparation of Yh-Ba-Cu-O Super Conducting Thin Films Using BaF .sub.2 As A Buffer Layer," Radpour, F., et al Appl. Phys. Lett., 54(24), 12 Jun. 1989, pp. 2479-2480.
. Apr,2007 |      Your vote accepted [0 after 0 votes] | | "Organometallic Chemical Vapor Deposition of High T.sub.c Superconducting Films Using a Violatile, Fluoro Carbon-Based Precursor," Zhao, J., et al, Appl. Phys. Lett., 53(18), 31 Oct. 1988 pp. 1750-1752.
. Apr,2007 |      Your vote accepted [0 after 0 votes] | | Webster's New Collegiate Dictionary .COPYRGT.1975 G+C Merriam Co. pp. 709 and 448.. Apr,2007 |      Your vote accepted [0 after 0 votes] | | |
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| Market Size |
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Estimate the gross annual revenues of the relevant market
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| Reasonable Royalty |
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Public's "Guesstimation" of Royalty Value
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Market Review  |
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Technical Review  |
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Claims  |
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What is claimed is:
1. A liquid delivery system for delivery of an initially liquid reagent in vaporized form to a chemical vapor deposition reactor arranged in vapor-receiving relationship to
the liquid delivery system, said liquid delivery system comprising:
(a) an elongate fluid flow passage defining a longitudinal axis and bounded by an enclosing wall to define a cross-section of the fluid flow passage transverse to the longitudinal axis;
(b) a thin flat porous vaporization element,
(i) having pores in the range of 2 to 200 micrometers,
(ii) having a surface to volume ratio of at least 4, and
(iii) positioned in the fluid flow passage transverse to the longitudinal axis and extending over the cross-section of the fluid flow passage to an outer periphery at the enclosing wall;
(c) means for heating the thin flat porous vaporization element to elevated temperature for vaporization of said liquid reagent;
(d) passage means for delivering a stream of said liquid reagent onto the surface of said porous vaporization element so that the reagent liquid wets the surface of the porous vaporization element in a thin layer of the liquid reagent and is
vaporized on said surface when heated by said heating means (c); and
(e) means for discharging vapor formed by vaporization of reagent liquid on the porous vaporization element, from the fluid flow passage for passage to the chemical vapor deposition reactor.
2. A liquid delivery system according to claim 1, wherein the passage means for delivering a stream of said liquid reagent onto the surface of said porous vaporization element comprise a liquid reagent delivery conduit longitudinally extending
along the elongate fluid flow passage and terminating at the surface of the porous vaporization element.
3. A liquid delivery system according to claim 1, wherein the porous vaporization element comprises a sintered disk formed of a material selected from the group consisting of metal, glass and ceramics.
4. Apparatus for forming films or layers on a substrate from a source reagent vapor derived from an initially liquid reagent, comprising:
a chemical vapor deposition reactor; and
a liquid deliver system arranged in vapor feeding relationship to the chemical vapor deposition reactor, for delivery of the initially liquid reagent in vaporized form to the chemical vapor deposition reactor.
said liquid delivery system comprising:
(a) an elongate fluid flow passage defining a longitudinal axis and bounded by an enclosing wall to define a cross-section of the fluid flow passage transverse to the longitudinal axis;
(b) a thin flat porous vaporization element,
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