A semiconductor device has a plurality of transistor pairs. Each transistor pair includes a p-channel current path having a pair of p-type current terminal regions arranged by sandwiching a high resistivity of a first channel region, an n-channel current path having a pair of n-type current terminal regions arranged by sandwiching a high resistivity of a second channel region. The first channel region and the second channel region exert each electric field on each other by their intrinsic charges and are adjacently arranged so as to serve as a gate.
An SOI multiple FET structure is provided that comprises a substrate having a substrate layer on an insulator layer. The SOI multiple FET structure includes distal diffusion regions in the substrate layer and a central diffusion region in the substrate layer. The central diffusion region has a width and extends from a surface of the substrate layer downward into contact with the insulator layer along a portion of the width and extends only partially into the substrate layer along another portion of the width. The SOI multiple FET structure also includes a pair of gates on the surface of the substrate layer each overlapping one of the distal diffusion regions and the central diffusion region; and a pair of body regions in the substrate layer each under one of the gates for forming a channel between the one of the distal diffusion regions and the central diffusion region. The body regions are in electrical communication under the another portion of the width of the central diffusion region. Methods for forming the SOI multiple FET structure are also provided.
