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Semiconductor device assembly including power or ground plane which is provided on opposite surface of insulating layer from signal traces, and is exposed to central opening in insulating layer for interconnection to semiconductor die    
United States Patent5552631   
Link to this pagehttp://www.wikipatents.com/5552631.html
Inventor(s)McCormick; John (Redwood City, CA)
AbstractOne or two, or more, additional conductive layers, separated from one another (if two or more) and separated from a patterned (signal) conductive layer are formed in a flexible substrate, for mounting a semiconductor die in a semiconductor device assembly. These additional layers are used as separate planes for carrying power and/or ground from outside the assembly to the die, on a separate plane from signals entering or exiting the die. Another aspect of the present invention provides a semiconductor device assembly including a first conductive layer with a plurality of traces formed on an insulating layer, a second conductive layer with an inner edge portion exposed within the central opening in the insulating layer, and a leadframe having a number of leads the inner end of one or more of the leads being electrically connected to an outer end of one or more of the traces. Selected traces are cut substantially at an inner peripheral edge of the first insulating layer, bent past the first insulating layer, and bonded to the exposed inner edge portion of the second conductive layer. The insulting layer may also include an outer peripheral opening through which an outer edge portion of the second conductive layer is exposed. The selected traces are cut substantially at the inner edge of the outer peripheral opening in the insulating layer, bent past the insulating layer, and bonded to the outer edge portion of the second conductive layer.



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Drawing from US Patent 5552631
Semiconductor device assembly including power or ground plane which is

     provided on opposite surface of insulating layer from signal traces,

     and is exposed to central opening in insulating layer for

     interconnection to semiconductor die - US Patent 5552631 Drawing
Semiconductor device assembly including power or ground plane which is provided on opposite surface of insulating layer from signal traces, and is exposed to central opening in insulating layer for interconnection to semiconductor die
Inventor     McCormick; John (Redwood City, CA)
Owner/Assignee     LSI Logic Corporation (Milpitas, CA)
Patent assignment
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Publication Date     September 3, 1996
Application Number     08/170,138
PAIR File History     Application Data   Transaction History
Image File Wrapper   Patent Term   Fees
Litigation
Filing Date     December 20, 1993
US Classification     257/666 257/668 257/692 257/696 257/713 257/734 257/735 257/E21.512 257/E21.516 257/E21.518 257/E23.004 257/E23.055 257/E23.062 257/E23.063 257/E23.065 257/E23.079 257/E23.104 257/E23.125
Int'l Classification     H01L 023/02 H01L 023/48 H01L 023/52
Examiner     Crane; Sara W.
Assistant Examiner     Whitehead Jr.; Carl
Attorney/Law Firm     Poms, Smith, Lande & Rose
Address
Parent Case     CROSS-REFERENCE TO RELATED APPLICATIONS The present invention is a continuation-In-part of application Ser. No. 07/894,031 now abandoned for MULTI-LAYER TAB TAPE HAVING DISTINCT SIGNAL, POWER AND GROUND PLANES, SEMICONDUCTOR DEVICE ASSEMBLY EMPLOYING SAME, APPARATUS FOR AND METHOD 0F ASSEMBLING SAME filed Jun. 4, 1992.
Priority Data    
USPTO Field of Search     257/666 257/667 257/668 257/670 257/676 257/734 257/735 257/736 257/712 257/713
Patent Tags     semiconductor assembly including power ground plane which is provided opposite surface insulating layer signal traces, is exposed central opening insulating layer for interconnection semiconductor die
   
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Mita
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Mar,1993

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Lindberg
174/52.4
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Dec,1991

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Schneider
257/797
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What is claimed is:

1. A semiconductor device assembly comprising:

a first conductive layer patterned to have a plurality of traces, each of said traces having an inner end and an outer end;

an insulating layer having an inner peripheral edge defining a central opening, said insulating layer supporting intermediate portions of said traces, with inner portions of said traces extending within said central opening so that said inner ends of said traces can be bonded to a die;

a second conductive layer provided on a side of said insulating layer opposite said traces and extending within said opening, with an inner edge portion of said second conductive layer exposed within said central opening in said insulating layer;

a leadframe having a plurality of leads with an inner end and an outer end, an inner end of at least one of said leads being electrically connected to an outer end of at least one of said traces; and

selected traces of said first conductive layer being cut at said inner peripheral edge of said insulating layer, bent past said insulating layer, and bonded to said exposed inner edge portion of said second conductive layer.

2. The semiconductor device assembly of claim 1 further comprising:

an outer peripheral opening in said insulating layer near an outer peripheral edge of said insulating layer, said outer peripheral opening having an inner and an outer edge;

an outer edge portion of said second conductive layer extending into an area under said outer peripheral opening in said insulating layer; and

said selected traces of said first conductive layer being cut near said inner edge of said outer peripheral opening in said insulating layer, bent past said insulating layer, and bonded to said outer edge portion of said second conductive layer.

3. The semiconductor device assembly of claim 2 wherein said outer peripheral opening in said insulating layer is an elongated slit substantially parallel to said inner peripheral edge of said insulating layer and substantially transverse to said traces.

4. The semiconductor device assembly of claim 1 wherein said selected traces are thermosonically bumpless TAB bonded to said second conductive layer.

5. The semiconductor device assembly of claim 1 wherein said second conductive layer is a ground reference plane.

6. The semiconductor device assembly of claim 1 wherein said second conductive layer is a power reference plane.

7. The semiconductor device assembly of claim 1 wherein said leadframe is constructed of a material that is more rigid than said traces on said insulating layer.

8. The semiconductor device assembly of claim 1 wherein said selected traces that are electrically connected to leads of said leadframe include a lower surface bonded to an upper surface of said leads.

9. The semiconductor device assembly of claim 1 wherein said selected traces that are electrically connected to leads of said leadframe include an upper surface bonded to a lower surface of said leads.

10. A semiconductor device assembly comprising:

a leadframe having a plurality of leads with inner and outer ends;

an insulator attached to said leadframe and having an inner peripheral edge defining a central opening, with the inner ends of said leads extending to said central opening and having an inner edge portion exposed within said central opening;

a conductive layer provided on a side of said insulator opposite said leadframe and extending within said central opening and having an inner edge portion of said conductive layer exposed within said central opening in said insulator;

an outer peripheral opening in said insulator near an outer peripheral edge thereof, said outer peripheral opening having an inner and an outer edge, with an outer edge portion of said conductive layer extending into an area under said outer peripheral opening in said insulator;

selected leads cut substantially at said inner edge of said outer peripheral opening in said insulator, bent past said insulator, and bonded to said outer edge portion of said conductive layer; and

connecting means for connecting said inner ends of other selected leads and said conductive layer to bond sites on a surface of said die.

11. The semiconductor device assembly of claim 10 wherein said connecting means comprises a layer of conductive traces, each of said traces having an inner end and an outer end, said inner ends of said traces bonded to said bond sites on said surface of said die, said outer ends of said traces bonded to said leads of said leadframe, selected traces cut substantially at said inner end of said leads of said leadframe, bent past said leads and said insulator, and bonded to said inner edge portion of said conductive layer.

12. The semiconductor device assembly of claim 10 wherein said connecting means comprises a plurality of wirebonds, said wirebonds connecting said inner ends of said other selected leads and said conductive layer to said bond sites on said surface of said die.

13. The semiconductor device assembly of claim 10 wherein said outer peripheral opening in said insulator is an elongated slit substantially parallel to said inner peripheral edge of said insulator and substantially transverse to said leads.
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TECHNICAL FIELD OF THE INVENTION

The invention relates to mounting a semiconductor device, or integrated circuit (IC) to a lead frame, flexible lead frame, or tape, for final packaging.

BACKGROUND OF THE INVENTION

Generally speaking, there are three distinct techniques of packaging a semiconductor device, in any case said package having leads or the like exiting the package for electrically connecting the packaged die tip other components, either by mounting directly to a printed circuit board or by plugging the packaged device into a socket which in turn is mounted to a printed circuit board. These are: (1) plastic molding; (2) ceramic packaging; and (3) flat packing.

U.S. Pat. No. 5,051,813 (Schneider, et al.), incorporated by reference herein, provides an example of a plastic-packaged semiconductor device. Present plastic packaging techniques involve molding a plastic "body" around a semiconductor die. Prior to molding, the die is attached to a lead frame having a plurality of leads ultimately exiting the package for connecting the semiconductor device to external circuits, such as via conductors on a printed circuit board. Various forms of plastic packs are known, including DIP (Dual In-line Package), PQFP (Plastic Quad Flat Pack) and PLCC (Plastic Leaded Chip Carrier). The lead frame is formed from a single thin layer (foil) of conductive material, which is punched out to form individual leads. The inner ends of the leads are usually wire bonded to the active side (components, bond pads) of the die. When handling the lead frame, prior to the encapsulation, it is exceptionally important to avoid damaging the closely-spaced, delicate leads.

U.S. Pat. No. 4,972,253, incorporated by reference herein, provides an example of multi-layer ceramic packages which are laminated structures of alternate conducting and non-conducting layers, formed of thick conductive film and nonconductive ceramic, respectively. Generally, the conductive layers carry only one of signals, power or ground. This approach, particularly separating the signal plane (layer) from the ground and power planes, has distinct electrical advantages, which are well known. In this type of package, the conductive layers are screened or otherwise disposed between the nonconductive layers, and a very rigid, stable package is formed. For the signal-carrying layers, lead traces are typically screened onto an underlying ceramic layer. A die is eventually disposed into an opening in the package and connected to inner (exposed) ends of the lead traces. Generally, there is little problem in damaging the lead traces, since they are well supported by an underlying ceramic layer. Generally, vias are formed in the package to connect power and ground planes to particular leads in the signal plane.

U.S. Pat. No 4,965,702, incorporated by reference herein, provides another example of a multi-layer package, using polymeric (e.g.) insulating layers and a copper foil (e.g.) for the conductive layers. Again, an object of such a multi-layer package is to provide for an electrical multilayer conductive package which partitions (separates) the power supply system of the package from the signal transmission system as much as practical in order to optimize the performance of both.

These two multi-layer ceramic and polymer packages are also known as "chip carriers" Both are preferably completely formed prior to mounting the semiconductor die within an opening in the chip carrier, and in both the inner leads are well-supported. Hence, both of these chip carriers inherently avoid the problem of lead damage during handling and mounting of the die.

FIGS. 1A and 1B show an example of tape-based flat packing. As illustrated herein, a semiconductor device assembly 10 includes an upper, segmented plastic film layer 14 (formed of segments 14A, 14B, 14C and 14D), a lower plastic film layer 16, metallic leads 18 sandwiched between the two plastic layers 14 and 16, a metallic (preferably copper) die attach pad 20 supported between the two plastic layers 14 and 16, a semiconductor device 22 mounted on the die attach pad 20 and bond leads 24 connecting the semiconductor device 22 to the leads 18. It is also known to employ conductive "bumps" on the inner ends of the leads, rather than bond wires, to connect the leads to the semiconductor die 22, in a tape automated bonding (TAB) process. The upper and lower plastic layers are suitably formed of polyimide, and form a thin, insulating supportive structure for the leads 18. A square, insulating ring ("body frame" or "dam" ) 26 is disposed atop the leads 18 between portions 14B and 14C of the upper plastic film layer, outside the die area. A layer-like quantity of silicone gel 28 is disposed over the die 22 and bond wires 24, and acts as an ionic contamination barrier for the die and as a stress relief for the leads 24 during assembly of the semiconductor device assembly, and further prevents an ultimate encapsulation epoxy 30 from contacting the semiconductor die. Evidently, the inner ends of the leads 18 are very fragile, and extreme care must be exercised when assembling the die 22 to the leads 18. In this respect, tape mounting a semiconductor die requires a similar degree of extreme care when mounting the die to the fine-pitch conductive leads.

Further examples of mounting semiconductor devices to a tape structure are shown in U.S. Pat. Nos. 4,800,419 and 4,771,330, incorporated by reference herein.

As used herein, the term "semiconductor device" refers to a silicon chip or die containing circuitry and bond sites on one face, and the term "semiconductor device assembly" refers to the semiconductor chip and associated packaging containing the chip, including external package leads or pins for connecting the semiconductor device assembly to a socket or a circuit board, and including internal connections (such as bond wires, TAB, or the like) of the chip to inner ends of the leads.

The aforementioned patents relate to semiconductor device assemblies having a high lead count, which is "de rigueur" in modern semiconductor devices. The plastic packaging and tape mounting techniques are generally indicative of methods of mounting semiconductor devices to preformed lead frames having a plurality of extremely delicate conductors connecting to the die.

As mentioned above, there are generally two techniques for connecting a die to inner ends of lead frame conductors, namely wire bonding and tape-automated bonding (TAB). In TAB, "bumps," typically formed of gold, are located on either the die ("bumped die" ) or on the inner ends of the lead fingers ("bumped tape" ). See, e.g., U.S. Pat. No. 4,842,662, FIGS. 5 and 6, respectively.

U.S. Pat. No. 4,842,662, incorporated by reference herein, discloses bonding integrated circuit components directly to a TAB tape, without the intermediary of a gold bump, by use of a process employing ultrasonic energy, pressure, time, heat and relative dimensions of the TAB tape. Generally, the end of a lead is "downset" (urged down) onto a die. (See column 6, lines 5-8). This may be thought of as a "bumpless" TAB process.

While the above-referenced parents teach various techniques of forming lead frames, TAB tapes, and the like, and various techniques for connecting semiconductor dies to same, these techniques generally involve only one layer, or plane, of patterned metal conductors (lead fingers), which single conductive layer represents a single plane carrying signals, power and ground to the semiconductor die.

As mentioned hereinabove, it is electrically desirable to provide distinct planes for carrying signal, power and ground from leads (or pins) exiting the package to the die within the package.

U.S. Pat. No. 4,933,741, incorporated by reference herein, discloses a multilayer package for integrated circuits having a ground plane (20) electrically isolated from a plane of conductors (14) by means of an insulating layer (16) formed of polyimide. The ground plane (20) is connected to selected conductors (14) by means of vias (18) extending through the insulating layer (16). The remaining (non-grounded conductors) carry signals and power to/from the integrated circuit device (11). As pointed out therein, "[b] because of the small physical size of the electrical conductors 14, they represent a significant impedance to operating potential and current 15 applied to the integrated circuit 11 causing an undesirable voltage drop along the length of the conductors 14. Additionally, capacitive coupling between the conductors 14 causes cross talk on the conductors 14 which apply signals to and/or derive signals from the integrated circuit 11. Further, the impedance of the conductors 14 create switching noise when the DC operating current 15 applied to the integrated circuit varies." And, as noted therein, "the capacitive cross coupling between the conductors 14 can be reduced by a [separate]ground plane 20 which also surrounds the integrated circuit 11 and is located adjacent the plurality of conductors." (See, especially, column 2, lines 31-46).

Despite the generally accepted notion that providing a separate ground plane has desirable electrical characteristics, the examples set forth above are limited to rigid, multi-layer ceramic or polyimide or polymer chip carriers. In both of these multi-layer approaches, it is relatively feasible to provide vias between separate metal layers and the intervening insulating layers.

On the other hand, in a tape-mounted, flexible substrate, semiconductor device assembly, it has generally not been very practical to consider or implement incorporating a distinct ground plane, since this type of "flexible" packaging does not lend itself readily to such a multi-layer approach employing vias spanning insulating layers.

For example, commonly-owned, co-pending U.S. patent application Ser. No. 07/829,977, entitled RIGID BACKPLANE FOR A SEMICONDUCTOR DEVICE ASSEMBLY, filed on Jan. 31, 1992, by Michael D. Rostoker, discloses an integrated circuit device package (semiconductor device assembly) having a flexible substrate including an upper patterned insulative layer, and a lower patterned conductive layer including a plurality of package leads (lead fingers). The assembly further includes a rigid or semi-rigid lower protective layer, formed of ceramic, glass, metal, plastic, and combinations thereof, which provides enhanced protection from mechanical and electrical degradation of the packaged device, and which may also serve as a heat sink. Thus we see that even though it is contemplated to have a rigid lower layer, which may be metal (i.e., electrically conductive), it is not contemplated to use the rigid lower layer as a ground plane connecting electrically to the die. (This is to be distinguished from the possibility that the rigid lower layer could be grounded to provide some shielding, but not connected within the package to the die.) The disclosure of this application is non-essential material.

The above described problems with conventional packaging techniques also affect packages incorporating a rigid leadframe in addition to or instead of etched conductive leads on a flexible support layer. Although the etched leads may be employed as an exit from the final package, and may provide a connection to external circuits and systems, in many applications a more rigid external lead is desirable. In such applications the leadframe may be bonded or otherwise attached to the existing etched leads. Alternatively, the etched traces may be eliminated altogether and the inner ends of the leadframe leads bonded to IC die bond sites using wirebonding or other suitable technique, the leadframe thus providing an interconnection between the die and external package pins.

A typical rigid leadframe usually includes a large number of leads, up to several hundred for complex ICs such as very large scale integrated (VLSI) circuits. Selected leads typically carry reference potentials such as power and ground potential from external sources to the IC. Often one or more reference planes are used to convey these reference potentials. The leads of the leadframe selected to carry reference potentials are therefore electrically connected to these reference planes, sometimes at more than one location. The reference planes are typically continuous conductive layers surrounding the die and located in a plane parallel to the plane of the rigid leadframe. The reference planes serve to improve electrical performance by isolating power or ground signal paths from other signals and by providing a controlled impedance for the leadframe signal leads passing over the reference plane. Lead inductance and crosstalk between adjacent leads is thereby considerably reduced.

Under current practice selected leads of a rigid leadframe are typically connected to the reference plane at predetermined locations before the die is bonded into the package. One significant problem with this practice is that each leadframe is typically custom designed to provide a predetermined set of leads to reference plane interconnections appropriate for a particular application. Significant design effort and expense is therefore required to predetermine the interconnections between the leadframe and the reference plane that are suitable for a specific form of IC die. This effort usually must be repeated for every new IC die design, IC design and manufacturing costs are significantly increased as a result,

U.S. Pat. No. 5,032,895 discloses one available technique of providing interconnections between the leads of a leadframe and a reference plane. The packaging method therein involves a resin-encapsulated semiconductor quad flat package (QFP). An insulating film tape is formed with an IC mounting window and a number of bonding recesses or through holes. A metal plate is then bonded to the lower surface of the insulating film using an adhesive. A leadframe is then adhesively bonded to the upper surface of the insulating film. The leadframe includes both inner and outer leads. Both the inner and outer leads are supported by a tie bar temporarily attached to the outer leads of the leadframe. The IC die is then mounted to the metal plate within the mounting window defined by the insulating film. Wirebond connections are then provided between the bonding pads on the IC die and the inner leads of the leadframe. Certain selected inner and outer leads of the leadframe are also wirebonded to the metal plate through the bonding recesses in the insulating film. The resulting structure is then encapsulated with a resin mold to form a packaged IC. The metal plate thus serves as a reference plane and carries a voltage potential from some of the leadframe outer leads to the leadframe inner leads and thereby to the IC die.

In the above described exemplary prior art package and packaging method the interconnections between the leadframe and the metal plate reference plane are predetermined. Both the leadframe and the insulating layer are necessarily custom designed to accommodate these predetermined interconnect locations. Since the connections between the leadframe and the reference plane can only take place by wirebonding certain predesignated leadframe leads to the reference plane through predesignated bonding recesses, a leadframe design suitable for one IC will generally have to be redesigned to accommodate other ICs. This is a costly and inflexible approach to leadframe and reference plane interconnection during IC packaging.

Hence, we see that there are various desirable and unfulfilled objectives in the design and implementation of tape-mounted, flexible-substrate semiconductor device assemblies. There is also a need for more flexible approach to interconnecting select leads of a leadframe to a reference plane that is adaptable to many different IC die and package designs.

DISCLOSURE OF THE INVENTION

It is an object of the present invention to provide an improved semiconductor device assembly.

It is a further object of the present invention to provide a multi-layer, relatively-flexible, tape-like substrate for mounting a semiconductor device, said substrate having at least a signal layer distinct from at least a ground plane.

It is a further object of the present invention to incorporate at least one additional electrically conductive plane into a semiconductor device assembly using tape automated bonding (TAB) assembly techniques.

It is a further object of the present invention to provide a rigid supportive structure in a TAB package.

It is a further object of the present invention to provide an improved technique for manufacturing a semiconductor device assembly.

It is a further object of the present invention to provide tooling for practicing the inventive techniques disclosed.

It is yet a further object of the present invention to provide standardized and flexible interconnections between a rigid leadframe and a reference plane in a semiconductor device package.

Another object of the present invention is to provide interconnection techniques suitable for connecting the leads of a leadframe to one or more reference planes in a manner readily adaptable for use with many different semiconductor device designs.

Still another object of the present invention is to provide leadframe to reference plane interconnections which may be automated in order to facilitate package assembly.

A further object of the present invention is to provide leadframe to reference plane interconnections compatible with a variety of IC package assembly techniques including TAB tape and wirebonding.

According to the invention, a relatively flexible, tape-like substrate for mounting a semiconductor device has a patterned, conductive layer of fine-pitch leads extending into a central area in which a semiconductor die may be connected to the inner ends of the leads. The substrate includes an underlying insulating (e.g., plastic film) layer supporting the leads, with an opening larger than the area defined by the inner ends of the leads so that inner end portions of the leads remain exposed past the opening in the insulating layer for connecting the leads to the semiconductor device. Preferably, all of the leads are connected to the semiconductor device.

A second, additional conductive layer underlies the insulating layer and is not patterned to form distinct leads, but rather forms a planar ring-like layer, the inner edge of which extends past the opening in the insulating layer, but is larger than the die. Hence, the substrate can be viewed as a sandwich of two conductive layers, one of which is patterned into discrete conductors (traces) and the other of which is not patterned, and an insulating layer interposed between the two conductive layers.

According to the invention, a first group (portion) of the total number of lead traces in the patterned conductive layer are connected to the die, preferably by TAB bonding or similar process (i.e., rather than by wire bonding). A remaining, selected portion of the lead traces in the patterned conductive layer are also connected at their inner ends to the die, and are then: (1) broken off at or just within the edge of the opening in the insulating layer, leaving an inner end portion of the selected lead traces disconnected from the remaining portion of the selected lead traces, one end of the inner end portion bonded to the die and the other end of the inner end portion being a "free" end, and are then (2) bent downwards past the insulating layer so that the free ends of the inner end portions of the traces contact an inner edge portion of the additional conductive layer extending into the opening of the insulating layer, and are then (3) bonded at their free ends to the inner edge portion of the ring. In this manner, the additional conductive layer can act as a ground (or power) plane connected to the die.

The additional conductive layer also extends under window-like slits near the outer edges of the insulating layer, where a similar process of cutting, bending and bonding outer portions of the selected lead traces, beyond the outer portions, exit the ultimate semiconductor device assembly, and can be connected to external ground (or power).

Hence, the additional conductive layer can be used to conduct ground (or power) from external portions of the selected lead traces to inner end portions of the lead traces, to the die, bypassing on a different plane the remaining intermediate portions of the lead traces which are intended (primarily) to carry signals to and from the die. In this manner, a distinct ground (or power) plane is established which is isolated from the patterned conductive layer (primarily signal paths), and the beneficial electrical characteristics discussed above accrue to a flexible, tape-mounted semiconductor device assembly.

Further according to the invention, two additional conductive layers are formed, one for ground and one for power. In a manner similar to that set forth with respect to one additional conductive layer, selected leads are cut, bent and connected to inner and outer edge portions of one additional conductive layer, and selected other leads are cut, bent and connected to inner and outer edge portions of the second additional conductive layer.

Further according to the invention, the selected and other selected lead traces are cut at an edge of the insulating (plastic) layer between the patterned conductive layer and the first additional (or simply "additional" if only one) conductive layer by urging downward on the selected and selected other lead traces with a bonding tool.

Further according to the invention, in a first bonding step, a bonding tool is used to cut, bend and partially bond a free end of the selected and selected other (if applicable) traces to the first and second (if applicable) additional conductive layers. In a second bonding step, the bonding tool is repositioned and bonds the already stabilized (tacked to the additional layer) free end of the lead trace to the additional conductive layer.

Further according to the invention, various methods of TAB bonding a conductive trace to an additional conductive layer, avoiding the use of bias, are disclosed.

Further according to the invention, various bonding tools for effecting TAB bonding of lead traces to an additional conductive layer are disclosed.

Further according to the invention, a tool (die pedestal) for aiding in the assembly of the die to the tape substrate, and for aiding in cutting, bending and bonding the selected and selected other lead traces to the additional conductive layer(s) is disclosed.

Still further in accordance with another aspect of the present invention, standardized interconnections between a rigid leadframe and one or more reference planes are provided. The leadframe to reference plane bonding is performed after the bonding sites on the IC die are bonded to the leadframe and the reference plane. The die is thus connected to leads of the leadframe before any of the leadframe leads are connected to the reference plane. Connections between the die and the leadframe determine which leads of the leadframe must be connected to the reference planes. It is therefore no longer necessary to custom design the leadframe in accordance with a predetermination of which leads of the leadframe require connection to the reference plane in a particular application.

In accordance with this aspect of the invention, a semiconductor device assembly includes: a first conductive layer patterned to have a plurality of traces, each having an inner end and an outer end; an insulating layer and supporting intermediate portions of the traces and having an inner peripheral edge defining a central opening, with the inner portions of the traces extending within the central opening of the insulating layer so that these inner ends of the traces can be bonded to an IC die; a second conductive layer provided on a side of the insulating layer opposite the traces and extending within the opening, with an inner edge portion of this second conductive layer being exposed within the central opening in the insulating layer; and a leadframe having a number of leads, with the inner ends of one or more of these leads being electrically connected to an outer end of one or more of the traces. Selected traces are then cut substantially at the inner peripheral edge of said first insulating layer, bent past the first insulating layer, and bonded to the exposed inner edge portion of the second conductive layer.

In accordance with another aspect of the invention, the insulating layer is provided with an outer peripheral opening having inner and outer edges, with an outer edge portion of the second conductive layer extending into an area under the outer peripheral opening in the insulating layer. Selected traces are then cut substantially at the inner edge of the outer peripheral opening in the insulating layer, bent past the insulating layer, and bonded to the outer edge portion of the second conductive layer.

This aspect of the present invention provides a standard set of interconnections between a leadframe and a reference plane. The interconnections are generally made after the leadframe and reference plane have been bonded together. The bonded leadframes and reference planes are suitable for use in a variety of ICs and therefore need not be custom designed for a particular application. Considerable manufacturing cost and processing time are thus saved as a result. The number of different leadframe designs required to support IC package assembly are also significantly reduced. The standardized connections between the leadframe and the reference planes may be automated in order to further facilitate IC package assembly. Any number or sequence of leadframe leads can be automatically bonded to the reference plane in accordance with the present invention.

In accordance with another aspect of the present invention a packaging method is further provided for assembling the above-described semicondu