An apparatus for ion implantation using high perveance beams is disclosed. The apparatus includes a dipole magnet apparatus that provides an adjustment to a cross-beam magnetic dipole field in an ion implantation system. Introduction and control of the magnetic dipole field gradient in a low energy implantation system as disclosed herein gives a significant improvement to the magnet's acceptance and beam focusing which largely defines the effective transported beam current. The apparatus involves the use of ferromagnetic yokes of a prescribed shape and a portion of a secondary magnet coil following along the outside radius of a set of primary dipole magnet coils which define and delineate the primary magnetic field area and beam path. The current return path for the secondary magnet coil is via another portion of the secondary magnet coil that follows a path such that the field generated by the return path secondary magnet coil is orthogonal to the primary magnetic field. The resulting magnetic field across the beam cross-section has a sloping shape with relative maxima and minima near the transverse beamline boundary. The action of the magnetic field distribution on the ion beam acts to compensate the space-charge dispersion of high perveance beams.

Method and apparatus for use in treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. Ions emitted by an ion source are accelerated away from the ion source to form an ion beam. A magnetic field is created for intercepting the ions in the ion beam exiting the source and selectively deflectiing the ions away from an initial trajectory in a generally arcuate scanning motion. The magnetic field is created by synchronized energization of first and second current carrying coils located along an inner surface of a ferromagnetic support. The beam is deflected away from the initial trajectory by a controlled amount in a time varying manner to cause the beam to sweep through an arcuate path and impact the workpiece.

An electrostatic triode lens (36) is provided for use in an ion implantation system (10). The lens includes a terminal electrode (37) and an adjustable lens subassembly (40) comprising a suppression electrode (38) and a resolving electrode (39), each having matched curved surfaces (108, 110). The lens subassembly is positioned near the terminal electrode where the beam has a minimal waist in a first (dispersive) plane. Such positioning minimizes the required gaps between electrodes, and thus, helps minimize beam blow-up and the electron depletion region in the deceleration mode of operation. The suppression and resolving electrodes each have first and second portions (38A and 38B, 39A and 39B) separated by a gap (d38, d39). A movement mechanism (60, 62) simultaneously moves the first portions of the suppression and resolving electrodes (38A, 39A) toward and away from the second portions of the suppression and resolving electrodes (38B, 39B), respectively, to adjust the gaps (d38, d39) therebetween. The adjustable lens subassembly (40) conditions the beam output by the terminal electrode (37) by (i) variably focusing the beam in mutually orthogonal (dispersive and non-dispersive) planes in a deceleration mode of operation (where mass resolution is less critical), while (ii) permitting variable mass resolution in the dispersive plane in an acceleration mode of operation (where focusing is less critical). Generally, the gap (d39) between the resolving electrode pair (39) is adjusted to permit adjustable mass resolution in the dispersive plane in the acceleration mode of operation. In the deceleration mode of operation, adjustment of the gap (d39) provides adjustable dispersive plane focusing, while the voltage on suppression electrode (38) is adjusted to permit adjustable non-dispersive plane beam focusing.

A low energy ion implanter having an ion source for emitting ions and an implantation chamber spaced from the ion source by an ion beam path through which ions move from the source to the implantation chamber. A mass analyzing magnet positioned along the beam path between the source and the implantation chamber deflects ions through controlled arcuate paths to filter ions from the beam while allowing certain other ions to enter the ion implantation chamber. The magnet includes multiple magnet pole pieces constructed from a ferromagnetic material and having inwardly facing pole surfaces that bound at least a portion of a ion deflection region. One or more current carrying coils set up dipole magnetic fields in the deflection region near the pole pieces. Additional coils help set up a quadrapole field in deflection region. A controller electrically coupled to the one or more coils of said magnet for controls current through the one or more current carrying coils to create the magnetic field in the deflection region near the pole pieces.

A system, apparatus, and method for changing source gases used for ion implantation is provided. A source chamber has a housing having one or more sidewalls and an extraction plate, wherein the one or more sidewalls and the extraction plate enclose an interior region of the source chamber. One or more inlets provide a fluid communication between one or more ignitable material sources and the interior region. An extraction aperture in the extraction plate provides a fluid communication between the interior region of the source chamber and a beam path region external to the source chamber. One or more diffusion apertures in the one or more sidewalls of the housing further provide a fluid communication between the interior region and a diffusion region external to the ion source chamber, wherein deposited ions are operable to diffuse out of the source chamber through the diffusion apertures.