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| United States Patent | 5583372 |
| Link to this page | http://www.wikipatents.com/5583372.html |
| Inventor(s) | King; Jerrold L. (Boise, ID);
Brooks; J. Mike (Caldwell, ID);
Moden; Walter L. (Boise, ID) |
| Abstract | A semiconductor die includes a metal layer deposited thereon for enhancing
adhesion between the die and a mold compound package. The metal layer is
substantially oxide free. The die is coated with a layer or layers of
copper (Cu) and/or palladium (Pd) by electroplating or electroless coating
techniques. The metal layer provides a uniform wetting surface for better
adhesion of the die with the mold compound during encapsulation. The
increased adhesion reduces delamination potential of the die from the
package. |
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Title Information  |
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Drawing from US Patent 5583372 |
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Adhesion enhanced semiconductor die for mold compound packaging |
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| Publication Date |
December 10, 1996 |
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| Filing Date |
September 14, 1994 |
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Title Information  |
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Description  |
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TECHNICAL FIELD
This invention relates in general to a semiconductor die packaging
technique and, more particularly, to a die having a metal layer backside
for enhanced adhesion of the die in a Leads On Chip (LOC) package system.
BACKGROUND OF THE INVENTION
A semiconductor integrated circuit (IC) packaged device generally includes
an IC chip (die) being connected to inner leads of a lead frame by wire
bonds. The chip, wire bonds, and inner leads are completely encapsulated
(packaged) for protection with a substance, such as plastic. Outer leads
communicate with the inner leads of the lead frame, but the outer leads
typically remain exposed for mounting of the packaged device to external
circuitry, such as a printed circuit board. Conventionally, encapsulation
occurs by a transfer molding technique wherein the encapsulation substance
is a thermoset epoxy molded around and to the die and lead frame and
subsequently cured.
In a conventional IC packaged device, a semiconductor die is placed on and
bonded to a center die paddle of a lead frame for support. Inner lead
fingers of the lead frame approach the paddle but do not contact or
communicate with the paddle. Rather, wire bonds communicate between
contact pads on the die and the inner lead fingers of the lead frame by
spanning the gap between the die and the fingers. The wire bonds allow for
the transmission of the electrical signals to and from the die and the
lead frame.
However, to shrink the conventional packaging requirements, techniques such
as the Lead On Chip (LOC) method have been developed. The LOC technique
disposes the inner lead fingers of a lead frame directly over the die (or
IC chip) rather than away from the die, and the lead frame does not
include a die paddle (support pad) for supporting the die. Double-sided
adhesive insulating tape attaches the conductive lead fingers to the die
so that no gap exists between the die and lead fingers. Wire bonds
communicate between the contact pads on the die and the inner lead fingers
which are disposed over the insulating tape directly over a portion of the
die adjacent the die pads.
This LOC technique allows the entire packaging of the IC device to be
smaller because the inner lead fingers are disposed directly over the die
rather than separate from the die. Similar to LOC, other variations of
using an adhesive tape for adhering lead fingers and, consequently,
shrinking packaging requirements, include a Tape Under Frame technique and
a Leads Under Die method.
Although IC packaging is minimized in each of these packaging techniques
that uses an adhesive tape, other problems surface. One such problem in
the LOC technique is the difficulty of obtaining a good solid adhesive
bond between the die and the package. One reason a solid bond is not
achieved is because the oxide on the silicon die substrate does not lend
itself to uniform wetting which is necessary for good adhesion with the
liquid mold compound.
When a die does not bond well with the mold compound package, delamination
may occur and the device may potentially be ruined during the
manufacturing process or surface mount of the package. Since production
environment areas retain a substantial humidity level to reduce static
buildup, i.e., often about 50%, moisture absorbs into the mold compound
and can penetrate delaminated areas between the die and mold compound.
When the moisture is converted to steam from heat processes and the steam
pressure is greater than the strength of the adhesion couple between the
mold compound and the die, the mold compound will crack or explode with a
"popcorn" effect.
To overcome this potential package cracking problem, one technique has been
to bake the moisture out of the mold compound to ensure a low moisture
content within the package. Another step is to place the device in a "dry
package" for shipping purposes by placing the final semiconductor chip
product in a shipping container with a desiccant drying agent, such as
silica gel. Although these techniques are commonly used in the
semiconductor industry, they provide only a temporary solution. Namely,
when a semiconductor manufacturer ships a "dried" packaged device by
following these techniques, the device may still absorb moisture at a
customer's site after the device is removed from the shipping container
materials. Furthermore, if the die has delaminated even slightly, the
package is subject to moisture penetration again and the package may
subsequently crack if exposed to sufficient heat.
Another technique for reducing delamination potential is disclosed in U. S.
Pat. No. 5,227,661 issued to Heinen on Jul. 13, 1993. Although this method
provides a working solution, it retains disadvantages by its use of
aminopropyltriethoxsilane as a coating on the die.
Obviously, the foregoing problems and solutions associated with providing a
good bond between a die and a die package to avoid delamination and
cracking of the package are undesirable aspects of conventional
semiconductor packaging techniques. Accordingly, objects of the present
invention are to provide an improved bonding between a semiconductor die
and its encapsulating package in order to decrease delamination potential
of the die from the package.
SUMMARY OF THE INVENTION
According to principles of the present invention in its preferred
embodiment, a backside of a semiconductor die includes a metal layer
deposited thereon for enhancing adhesion between the die and a mold
compound package. The metal layer is substantially oxide free. The die is
coated with a layer or layers of copper (Cu) and/or palladium (Pd) by
electroplating or electroless coating techniques.
According to further principles of the present invention, the metal layer
preferably comprises approximately 50 micro inches of a Cu layer deposited
over the backside of the die and approximately 2 to 3 micro inches of a Pd
layer deposited over the Cu layer.
Advantageously, the metal layer on the die provides a uniform wetting
surface for better adhesion of the die with the mold compound during
encapsulation. The increased adhesion reduces delamination potential of
the die from the package and, consequently, reduces cracking of the
package.
The aforementioned principles of the present invention provide an adhesion
enhanced semiconductor die for improving adhesion of the die with a mold
compound packaging. Other objects, advantages, and capabilities of the
present invention will become more apparent as the description proceeds.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is an end-section view of a packaged integrated circuit die having
the present invention adhesion enhanced layer deposited thereon.
FIG. 2 is an enlarged partial view of FIG. 1 showing a corner edge of the
die and its adhesion enhanced layer deposited thereon.
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is an end-section view of packaged integrated circuit (IC) 10. Lead
frame 15 is disposed over IC die 20, the lead frame including inner and
outer lead finger portions 25 and 30, respectively. Inner lead fingers 25
are adjacent die pads 35, and outer lead fingers 30 extend outward of mold
compound packaging 40 for connection with appropriate external circuitry.
Insulator adhesive tape strips 45 are disposed between inner lead fingers
25 and frontside 50 of die 20 to adhere the lead fingers to the die.
Integrated circuitry is disposed on frontside 50 of die 20. Wire bonds 52
communicate between inner lead fingers 25 and die pads 35 for making the
electrical connection between the die and the lead fingers.
Metal layer 55 is shown deposited over backside 60 of die 20. Metal layer
55 enhances adhesion of die 20 with mold compound 40. Metal layer 55 is
deposited over die 20 using an electroplating process or electroless
coating process well known in the art prior to packaging of the die with
mold compound 40.
Metal layer 55 provides a uniform wetting surface for mold compound 40 to
adhere better to die 20. Although shown in its hardened and cured state,
mold compound 40 is in a flowing state when it is initially heated over
and molded around die 20. Consequently, the uniform wetting surface
provided by layer 55 enhances the adhesion between the die and the mold
compound.
In its preferred embodiment, metal layer 55 is substantially oxide free.
Also, preferably, the metal layer is either palladium (Pd) or copper (Cu),
or a combination thereof, although it is obvious other metals may likewise
suffice. Although copper is cheaper in cost, it retains more oxide which
counteracts the intended adhesion. Palladium is more expensive, but
provides a substantially oxide-free layer for effectuating a good bond
with the mold compound.
Although a single metal layer suffices to provide the advantages of the
present invention, in its preferred embodiment, metal layer 55 actually
comprises a plurality of layers as shown in FIG. 2. Namely, a cheaper,
thicker layer 65 of copper deposited over backside 60 of die 20 provides a
good barrier to the oxide on die 20. A thinner layer 70 of palladium is
deposited over the copper layer to provide an even better uniform wetting
surface. The palladium is also substantially free from oxide. Preferably,
about 50 micro inches of copper and approximately 2 to 3 micro inches of
palladium are deposited. Consequently, this combination of metal layers
provides the enhanced adhesion layer 55 on die 20 and, together, provide a
good balance of cost and effectiveness.
As previously mentioned, when a die does not bond well with the mold
compound package, delamination may occur and the device may potentially be
ruined during the manufacturing process or surface mount of the package
because of moisture penetration between the die and compound. When the
moisture is converted to steam from heat processes and the steam pressure
is greater than the strength of the adhesion couple between the mold
compound and the die, the mold compound will crack or explode with a
"popcorn" effect.
The present invention, as described and diagramed, reduces this potential
package cracking problem. Consequently, no baking of the moisture out of
the mold compound is needed, and no "dry packaging" the device for
shipping purposes is needed.
What has been described above are the preferred embodiments for a
semiconductor die having a metal layer backside for enhancing adhesion
between the die and its mold compound packaging. It is clear that the
present invention provides a powerful tool for reducing delamination
potential of a die and subsequent cracking of the mold compound packaging.
While the present invention has been described by reference to specific
embodiments, it will be apparent that other alternative embodiments and
methods of implementation or modification may be employed without
departing from the true spirit and scope of the invention.
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Description  |
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