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Claims  |
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I claim:
1. An integrated circuit comprising:
a reference voltage generator having an output providing a reference
voltage;
a selectively engageable filter having an input connected to the output of
the reference voltage generator, and having an output;
a voltage regulator having an input connected to the output of the filter,
and having an output;
a dynamic random access memory receiving power from the output of the
voltage regulator, the dynamic random access memory having memory cells
that are accessed or refreshed in response to a first signal; and
a timing circuit which engages the filter in response to the first signal,
and causes the filter to filter the reference voltage.
2. An integrated circuit in accordance with claim 1 wherein the filter is a
low pass filter.
3. An integrated circuit in accordance with claim 1 wherein the filter
comprises a low pass filter including a resistor-capacitor network.
4. An integrated circuit in accordance with claim 1 wherein the memory
cells are accessed or refreshed in response to a RAS signal, and wherein
the timing circuit engages the filter in response to the RAS signal.
5. An integrated circuit comprising:
a reference voltage generator having an output providing a reference
voltage;
a selectively engageable low pass filter having an input connected to the
output of the reference voltage generator, and having an output;
a voltage regulator having an input connected to the output of the low pass
filter, and having an output;
a dynamic random access memory receiving power from the output of the
voltage regulator; and
a timing circuit which engages the low pass filter in response to the
presence of a signal, wherein the low pass filter filters the reference
voltage for a period of time during which the signal is present.
6. An integrated circuit in accordance with claim 5 wherein the low pass
filter includes a resistor-capacitor network.
7. An integrated circuit in accordance with claim 5 wherein the timing
circuit engages the filter in response to presence of a RAS signal, and
wherein the low pass filter filters the reference voltage for a period
during which a RAS signal is present.
8. An integrated circuit in accordance with claim 5 wherein the timing
circuit engages the filter coincident with the start of a RAS signal.
9. An integrated circuit in accordance with claim 5 wherein the timing
circuit engages the filter coincident with the start of a RAS signal, and
for a period of time less than the period during which the RAS signal is
present.
10. A method of increasing the speed of operation of a dynamic random
access memory having memory cells which are individually accessed in
response to a signal, including a reference voltage generator having an
output, and including a voltage regulator which accepts the output of the
reference voltage generator and supplies voltage to the dynamic random
access memory, the method comprising:
filtering the output of the reference voltage generator in response to the
signal.
11. A method in accordance with claim 10 wherein the filtering step
comprises the step of using a low pass filter to filter the output of the
reference voltage generator in response to the signal.
12. A method in accordance with claim 10 wherein the signal is a RAS
signal.
13. A circuit comprising:
a dynamic random access memory having a memory cell, which memory cell is
selectively accessed in response to a signal;
a voltage regulator which supplies an operating voltage to the dynamic
random access memory; and
means, including a selectively engageable filter, for maintaining the
operating voltage steady during reading and writing to the memory cell.
14. A circuit in accordance with claim 13 and further comprising a
reference voltage generator including an output providing a reference
voltage, wherein the voltage regulator accepts the output of the reference
voltage generator, and wherein the filter filters the output of the
reference voltage generator in response to the signal.
15. A circuit in accordance with claim 13 and further comprising a
reference voltage generator including an output providing a reference
voltage, wherein the voltage regulator accepts the output of the reference
voltage regulator, and wherein the filter comprises a low pass filter
filtering the output of the reference voltage generator.
16. A circuit in accordance with claim 13 wherein the signal is a RAS
signal.
17. A circuit in accordance with claim 13 and further comprising an
integrated circuit package housing the dynamic random access memory, the
voltage regulator, and the maintaining means.
18. A circuit comprising:
a dynamic random access memory having a memory cell which is selectively
refreshed in response to a signal;
a voltage regulator which supplies an operating voltage to the dynamic
random access memory; and
means, including a selectively engageable filter, for maintaining the
operating voltage steady during refreshing of the memory cell.
19. A circuit in accordance with claim 18 and further comprising a
reference voltage generator including an output providing a reference
voltage, wherein the voltage regulator accepts the output of the reference
voltage generator, and wherein the filter filters the output of the
reference voltage generator in response to the signal.
20. A circuit in accordance with claim 18 and further comprising a
reference voltage generator including an output providing a reference
voltage, wherein the voltage regulator accepts the output of the reference
voltage regulator, and wherein the filter comprises a low pass filter
filtering the output of the reference voltage generator.
21. A circuit in accordance with claim 18 wherein the signal is a RAS
signal.
22. A circuit in accordance with claim 18 and further comprising an
integrated circuit package housing the dynamic random access memory, the
voltage regulator, and the maintaining means.
23. A system comprising:
a reference voltage generator having an output providing a reference
voltage;
a selectively engageable filter having an input connected to the output of
the reference voltage generator, and having an output;
a voltage regulator having an input connected to the output of the filter,
and having an output;
a circuit receiving power from the output of the voltage regulator, the
system being accessed in response to a first signal; and
a timing circuit which engages the filter in response to the first signal,
and causes the filter to filter the reference voltage.
24. A system in accordance with claim 23 wherein the filter is a low pass
filter.
25. A system in accordance with claim 23 wherein the filter comprises a low
pass filter including a resistor-capacitor network.
26. An integrated circuit comprising:
a reference voltage generator having an output providing a reference
voltage;
a selectively engageable filter having an input connected to the output of
the reference voltage generator, and having an output;
a voltage regulator having an input connected to the output of the filter,
and having an output;
means generating a predictable noise function;
a dynamic random access memory receiving power from the output of the
voltage regulator, the dynamic random access memory having memory cells
that are accessed or refreshed in response to the generating means
generating the noise function; and
a timing circuit which engages the filter in response to the first signal,
and causes the filter to filter the reference voltage.
27. An integrated circuit in accordance with claim 26 wherein the filter is
a low pass filter.
28. An integrated circuit in accordance with claim 26 wherein the filter
comprises a low pass filter including a resistor-capacitor network.
29. An integrated circuit in accordance with claim 26 wherein the memory
cells are accessed or refreshed in response to a RAS signal, and wherein
the timing circuit engages the filter in response to the RAS signal.
30. An integrated circuit comprising:
a reference voltage generator having an output providing a reference
voltage;
a selectively engageable filter having an input connected to the output of
the reference voltage generator, and having an output;
a voltage regulator having an input connected to the output of the filter,
and having an output;
a dynamic random access memory receiving power from the output of the
voltage regulator, the dynamic random access memory having memory cells;
means for refreshing the memory cells; and
a timing circuit which engages the filter in response to the refreshing
means refreshing the memory cells, and causes the filter to filter the
reference voltage. |
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Claims |
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Description |
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TECHNICAL FIELD
This invention relates to dynamic random access memory integrated circuits.
BACKGROUND OF THE INVENTION
Integrated circuits including dynamic random access memory (DRAM) devices
are known in the art.
A DRAM is a device which includes a plurality of memory cells, and a
plurality of row lines and column lines, wherein each memory cell is
connected to both a row line and a column line. The row lines and column
lines form a two-dimensional matrix having a plurality of intersections. A
single memory cell is associated with each intersection between a row line
and a column line. At each intersection, a row line is connected to
selectively activate the corresponding memory cell. The memory cell
includes a storage capacitor which is connected to the corresponding
column line to allow conventional memory access operations such as
reading, writing, or refreshing.
Many DRAMS are required to operate in mixed voltage systems. To accommodate
such operation, the integrated circuits containing the DRAMS also include
on-chip voltage regulators to regulate voltage down to a desired voltage
range. Such voltage regulators are discussed in an article titled "A New
On-chip Voltage Regulator for High Density CMOS DRAMs" by R. S. Mao et al,
1992 Symposium on VLSI Circuits Digest of Technical Papers, IEEE, 1992,
which is incorporated herein by reference.
The voltage regulator uses the voltage supplied to the integrated circuit
(V.sub.cc) as a reference. A problem with such regulator design is that
when active pullup of a row line or column line occurs, for accessing of a
memory cell, the supply voltage V.sub.cc drops. The drop in the supply
voltage can be from several hundred millivolts to up to one volt. This
causes problems with the voltage regulator which uses the supply voltage
as a reference. Even though voltage regulators are designed to stabilize
an output voltage against fluctuations in source or load, the reduction in
the supply voltage is sufficiently drastic to cause the voltage regulator
to reduce the operating voltage of the DRAM. This slows operation of the
DRAM.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a perspective view of an integrated circuit embodying the
invention.
FIG. 2 is a schematic diagram of a dynamic random access memory device
included in the integrated circuit of FIG. 1.
FIG. 3 is a block diagram of the circuitry included in the integrated
circuit of FIG. 1.
FIG. 4 is a circuit diagram illustrating circuitry included in the
integrated circuit of FIG. 1, the circuitry being powered by a voltage
source VCCX.
FIG. 5 is a circuit model diagram illustrating how the voltage VCCX results
from source voltage supplied to the integrated circuit.
FIG. 6 is a timing diagram illustrating timing of activation of filter
circuitry included in the circuitry shown in FIG. 4.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
This disclosure of the invention is submitted in furtherance of the
constitutional purposes of the U.S. Patent Laws "to promote the progress
of science and useful arts." U.S. Constitution, Article 1, Section 8.
The invention provides an integrated circuit comprising a reference voltage
generator having an output providing a reference voltage; a selectively
engageable filter having an input connected to the output of the reference
voltage generator, and having an output; a voltage regulator having an
input connected to the output of the filter, and having an output; a
dynamic random access memory receiving power from the output of the
voltage regulator, the dynamic random access memory having memory cells
that are accessed or refreshed in response to a first signal; and a timing
circuit which engages the filter in response to the first signal, and
causes the filter to filter the reference voltage.
One aspect of the invention provides an integrated circuit comprising a
reference voltage generator having an output providing a reference
voltage; a selectively engageable low pass filter having an input
connected to the output of the reference voltage generator, and having an
output; a voltage regulator having an input connected to the output of the
low pass filter, and having an output; a dynamic random access memory
receiving power from the output of the voltage regulator; and a timing
circuit which engages the low pass filter in response to the presence of a
signal, wherein the low pass filter filters the reference voltage for a
period of time during which the signal is present.
One aspect of the invention provides a method of increasing the speed of
operation of a dynamic random access memory having memory cells which are
individually accessed in response to a signal, including a reference
voltage generator having an output, and including a voltage regulator
which accepts the output of the reference voltage generator and supplies
voltage to the dynamic random access memory, the method comprising
filtering the output of the reference voltage generator in response to the
signal.
One aspect of the invention provides a circuit comprising a dynamic random
access memory having a memory cell, which memory cell is selectively
accessed in response to a signal; a voltage regulator which supplies an
operating voltage to the dynamic random access memory; and means, other
than the voltage regulator, for maintaining the operating voltage steady
during reading and writing to the memory cell.
One aspect of the invention provides a circuit comprising a dynamic random
access memory having a memory cell which is selectively refreshed in
response to a signal; a voltage regulator which supplies an operating
voltage to the dynamic random access memory; and means, other than the
voltage regulator, for maintaining the operating voltage steady during
refreshing of the memory cell.
FIG. 1 shows an integrated circuit 7 embodying the invention. The
integrated circuit 7 includes a housing 8, and a plurality of pins 9. The
housing 8 of the integrated circuit 7 houses circuitry described below in
greater detail. More particularly, the integrated circuit 7 comprises a
dynamic random access memory (DRAM) device 10.
FIG. 2 shows a portion of the DRAM device 10. DRAM 10 includes a plurality
of dynamic memory cells or units 12, a plurality of row or word lines 14,
and a plurality of column or bit lines 16. Only two memory cells 12, two
row lines 14, and two column lines 16 are shown in FIG. 2.
The dynamic memory cells of DRAM 10 are arranged in memory array columns
which each include numerous memory cell pairs such as the single pair
shown. Each column might contain, for example, 1024 or 2048 pairs of
memory cells. Each memory cell 12 comprises a storage capacitor or cell 20
and an access switch or device 22 which is preferably an n-channel metal
oxide silicon field effect transistor.
Dynamic memory cell 20 is operated by and with reference to upper and lower
supply voltages. The lower supply voltage is typically referred to as
ground. A first side or cell plate of storage cell 20 is connected to an
intermediate reference voltage between the upper supply voltage and
ground. This reference voltage is typically equal to the average of the
upper and lower memory cell supply voltages. It is produced by a cell
plate generator circuit, and is referred to as DVC2. The first cell plates
of all storage cells 20 are typically formed by a single conducting layer
within memory device 10, so that they are at a common electrical potential
equal to reference voltage DVC2.
A second side or plate of storage cell 20 is connected to one active
terminal of access device 22. One of column lines 16 is connected to the
other active terminal of access device 22. The gate or control terminal of
access device 22 is connected to one of row lines 14. Each memory unit 12
is therefore connected to both a row line 14 and a column line 16.
The row lines and column lines form a two-dimensional matrix having a
plurality of intersections. A single memory cell 12 corresponds to each
intersection between a row line and a column line. At a single such
intersection, a row line is connected to selectively activate the
corresponding memory unit. Activating the memory unit connects the memory
unit's storage capacitor to the corresponding column line to allow
conventional memory access operations such as reading, writing, or
refreshing.
Column lines are associated with sense amplifiers. Each pair of column
lines has a column line equilibrate circuit 30. Each equilibrate circuit
30 includes a pair of equilibrate transistors 32. One active terminal of
each equilibrate transistor is connected to receive the cell plate
reference voltage DVC2. The other active terminal of each equilibrate
transistor 32 is connected to one of the adjacent column lines 16.
Equilibrate circuits 30 are responsive to an equilibrate signal EQ to
simultaneously connect reference voltage DVC2 to the column lines. During
normal memory access operations, equilibrate signal EQ is activated to
"pre-charge" the column lines to intermediate reference voltage DVC2 prior
to activating transfer devices 22 and accessing memory cells.
The memory functions of memory device 10 are performed by storage cells 20.
The first cell plate of each memory cell 12 is maintained at a non-varying
intermediate voltage--reference voltage DVC2. The second cell plate is
charged to either the upper supply voltage or the lower supply voltage
(ground), depending on whether a binary 1 or 0 is being written to the
memory cell 12. Reading a memory cell 12 is performed by detecting whether
the memory cell's second plate is above or below the intermediate
reference voltage.
Conventional timing signals, including a RAS (Row Address Strobe) signal
and a CAS (Column Address Strobe) signal are used to refresh a memory
cell, or to read or write to a memory cell 12. Timing diagrams including
RAS and CAS signals, and detailed descriptions of DRAM operations and
constructions are disclosed in DRAM Data Book, 1995, which is available
from Micron Technology, Inc., 2805 East Columbia Road, P.O. Box 6, Boise,
Id. 83707-0006.
The integrated circuit 7 further comprises a voltage regulator 34 having an
output 36 supplying a regulated voltage V.sub.reg to the DRAM 10 (FIG. 3).
In the illustrated embodiment, the upper supply voltage of the DRAM 10 is
the regulated voltage V.sub.reg supplied by the voltage regulator 34. The
voltage DVC2 is derived from the regulated voltage V.sub.reg. Any
appropriate voltage regulator design can be employed for the voltage
regulator 34. For example, the voltage regulator 34 can be of a design
similar to the design described in A New On-chip Voltage Regulator for
High Density CMOS DRAMs, by R. S. Mao et al. The voltage regulator 34 can
be an operational amplifier (op-amp) with or without gain. In FIG. 4, the
illustrated voltage regulator 34 comprises an op-amp 38 with negative
feedback, with a positive supply terminal 40 connected to VCCX, and with a
negative supply terminal 42 connected to ground. VCCX is the on-chip
voltage supply after taking into account the inductance L of the lead 9
which is connected to an external supply VCC (FIG. 5) when the integrated
circuit is in use.
The regulated voltage V.sub.reg is also used to power other DRAM components
such as the sense amplifiers 24, the equilibrate control circuit which
provides the signal EQ to the equilibrate circuits 30, and other
components (e.g., charge pumps, all control logic) which would normally be
connected to V.sub.cc in a conventional, non-regulated, DRAM.
Substantially all DRAM components other than output amplifiers are powered
by the regulated voltage V.sub.reg.
The integrated circuit 7 further comprises a reference voltage generator 44
having an output 46 providing a reference voltage. Any appropriate
reference voltage generator design can be employed for the reference
voltage generator 44. For example, the reference voltage generator 44 can
comprise an op-amp with or without gain. In the illustrated embodiment the
reference voltage generator 44 comprises a resistor divider 48 having a
series pair of resistors 50 and 52 connected between VCCX and ground, and
an op-amp 54 with negative feedback, having a non-inverting input 56
connected to a center tap 58 between the resistors 50 and 52, having a
positive supply terminal 60 connected to VCCX and having a negative supply
terminal 62 connected to ground. Other op-amp designs are disclosed in
Microelectronic Circuits, Adel S. Sedra and Kenneth C. Smith, 1987, CBS
College Publishing.
The integrated circuit further comprises means, other than the voltage
regulator 34, for maintaining the operating voltage steady during reading
and writing to the memory cell 12, and during refresh of the memory cell
12. In the illustrated embodiment, the maintaining means comprises means
for filtering the output 46 of the reference voltage generator 44. More
particularly, the integrated circuit 7 comprises a filter 64 having an
input 66 connected to the output 46 of the reference voltage generator 44,
and having an output 68 providing a selectively filtered, regulated,
voltage V.sub.ref. In the illustrated embodiment, the filter 64 is a low
pass filter. Any appropriate low pass filter design can be employed for
the low pass filter 64. For example, in the illustrated embodiment the low
pass filter 64 comprises a resistor-capacitor network 70. Other filter
designs are disclosed in Microelectronic Circuits, Adel S. Sedra and
Kenneth C. Smith, 1987, CBS College Publishing.
The voltage regulator 34 has an input 72 connected to the output 68 of the
filter 64. The voltage regulator 34 accepts the voltage V.sub.ref and
provides the regulated voltage V.sub.reg at the output 36. The voltage
regulator 34 is designed to provide a steady output as long as the voltage
V.sub.ref stays within a predetermined range of voltages. For example, the
voltage regulator described in A New On-chip Voltage Regulator for High
Density CMOS DRAMs, by R. S. Mao et al. accepts an external power supply
of approximately 5 Volts and generates 3.3 Volts on chip. At 25.degree.
C., the voltage regulator described in the Mao article maintains an output
of 3.3 Volts for input voltages varying between 3.3 to 6.2 Volts. If the
input voltage exceeds 6.3 Volts, the voltage regulator described in the
Mao article enters a burn-in mode and voltage output follows 2/3 of
voltage input.
The low pass filter 64 can either be always on, or selectively activated
(or bypassed). In many cases, it would be undesirable for the filter 64 to
be always enabled because the voltage V.sub.ref may be too slow in
reflecting a desired response to a change in VCCX. In other words, it may
be difficult to design a filter that both removes undesired noise, and has
the required response characteristics in all situations Therefore, in the
preferred embodiment, the filter 64 is selectively engageable (or
selectively bypassed). For example, in the illustrated embodiment, the
integrated circuit 7 further comprises a timing circuit 74 which engages
the filter 64 in response to presence of a first signal, and causes the
filter 64 to filter the reference voltage. The timing circuit 74 engages
the filter 64 in response to presence of a signal indicative of a memory
cell 12 being accessed. For example, the timing circuit preferably engages
the filter 64 coincident with or a predetermined time after a RAS, CAS,
RAS or CAS signal rises or falls. Because timing of memory cell accessing
is predictable in both start and duration, the filter 64 can be timed to
be turned on during accessing (read/write and refresh) of memory cells 12.
Alternatively, or in addition, the filter 64 can be timed to be turned on
when known predictable undesirable VCCX effects or noise functions are
expected. For example, charge pumps create predictable noise functions.
Any appropriate design may be employed for the timing circuit 74. For
example, in the illustrated embodiment the timing circuit 74 comprises a
NOR gate 76 having one input 78 connected to a RAS signal generator 80,
and having another input connected to series connected inverter and delay
gates 84 and 86 (FIG. 4). The NOR gate 76 also has an output 88 producing
a timing signal A. The series connected inverter and delay gates 84 and 86
have an input 90 connected to the RAS signal generator 80. The integrated
circuit 7 further includes a switch Q1 which is controlled by the timing
signal A, and which turns on the filter when signal A rises (FIG. 6).
In alternative embodiments (not shown), the regulated voltage Vreg is
supplied to components other than DRAM components, and the timing circuit
is triggered by an appropriate signal other than a RAS signal.
FIG. 6 shows the preferred timing relationship between RAS (RAS NOT, the
inverse of RAS) and the signal A, and shows the difference between VCCX
and the filtered voltage V.sub.ref output by the filter 64. In the
illustrated embodiment, the timing circuit 74 engages the filter 64
coincident with the start of a RAS signal, and for a period of time during
which the RAS signal is present. More particularly, in the illustrated
embodiment, the timing circuit 74 engages the filter 64 coincident with
the start of a RAS signal, and for a period of time less than the period
during which the RAS signal is present.
Thus, the invention provides a method of increasing the speed of operation
of an integrated circuit including a dynamic random access memory having
memory cells which are individually accessed in response to a signal,
including a reference voltage generator having an output, and including a
voltage regulator which accepts the output of the reference voltage
generator and supplies voltage to the dynamic random access memory, by
filtering the output of a reference voltage generator in response to the
signal.
In compliance with the statute, the invention has been described in
language more or less specific as to structural and methodical features.
It is to be understood, however, that the invention is not limited to the
specific features shown and described, since the means herein disclosed
comprise preferred forms of putting the invention into effect. The
invention is, therefore, claimed in any of its forms or modifications
within the proper scope of the appended claims appropriately interpreted
in accordance with the doctrine of equivalents.
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