High performance thermoelectric materials and methods of preparation

Claims

What is claimed is:

1. A thermoelectric device having a plurality of thermoelectric elements with at least one of the thermoelectric elements comprising a first material having a skutterudite-type crystal lattice structure with a unit cell of eight groups of AB.sub.3 wherein A comprises a metal atom and B comprises a non-metal atom.

2. The thermoelectric device as defined in claim 1 wherein the first material further comprises IrSb.sub.3.

3. The thermoelectric device as defined in claim 1 wherein the first material further comprises CoSb.sub.3.

4. The thermoelectric device as defined in claim 1 wherein the first material further comprises RhSb.sub.3.

5. The thermoelectric device as defined in claim 1 wherein the first material further comprises a semiconductor alloy having the formula:

Co.sub.1-x-y Rh.sub.x Ir.sub.y Sb.sub.3

wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1.

6. A thermoelectric device comprising:

a first material having a skutterudite-type crystal lattice structure with a unit cell of eight groups of AB.sub.3 wherein A comprises a metal atom and B comprises a non-metal atom; and

a second material selected from the group consisting of Bi-Sb alloys, Bi.sub.2 Te.sub.3 based alloys, PbTe based alloys, .beta.-FeSi.sub.2 based alloys, Ga.sub.1-x In.sub.x Sb based alloys, and SiGe alloys.

7. A thermoelectric device having a plurality of thermoelectric elements with at least one of the thermoelectric elements comprising a first material having the formula:

Co.sub.1-x-y Rh.sub.x Ir.sub.y Sb.sub.3

wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1.

8. The thermoelectric device as defined in claim 7 wherein the first material further comprises a skutterudite-type crystal lattice structure.

9. A thermoelectric device comprising:

a first material having the formula:

Co.sub.1-x-y Rh.sub.x Ir.sub.y Sb.sub.3

wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1; and

a second material selected from the group consisting of Bi-Sb alloys, Bi.sub.2 Te.sub.3 based alloys, PbTe based alloys, .beta.-FeSi.sub.2 based alloys, Ga.sub.1-x In.sub.x Sb based alloys, and SiGe alloys.

10. A thermoelectric device having a plurality of thermoelectric elements formed from at least two different types of semiconductor materials comprising:

a portion of the thermoelectric elements formed from P-type semiconductor material having a skutterudite-type crystal lattice structure; and

the P-type semiconductor material having the formula:

Co.sub.1-x-y Rh.sub.x Ir.sub.y Sb.sub.3

wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1.

11. The thermoelectric device as defined in claim 10 further comprising another portion of the thermoelectric elements formed from N-type semiconductor material selected from the group consisting of Bi-Sb alloys, Bi.sub.2 Te.sub.3 based alloys, PbTe based alloys, .beta.-FeSi.sub.2 based alloys, Ga.sub.1-x In.sub.x Sb based alloys, and SiGe alloys.

12. Apparatus using gradient freeze techniques to prepare a semiconductor alloy for use in fabricating thermoelectric elements comprising:

a furnace defined in part by a housing having a chamber with a first heater and a second heater disposed therein;

the first heater disposed within the chamber above the second heater;

a thermal baffle disposed within the chamber between the first heater and the second heater;

a container disposed within the chamber with the container adjacent to the thermal baffle;

a plurality of elemental materials disposed within the container for melting within the furnace to form the desired semiconductor alloys;

a sealed vessel with a first elemental material and a second elemental material; and

the first elemental material selected from the group consisting of iridium, rhodium and cobalt, and the second elemental material comprising antimony.

13. The apparatus as defined in claim 12, further comprising an antimony rich melt with a composition between 90% and 99.5% antimony as compared to the first elemental material.

14. The apparatus as defined in claim 12 further comprising the first heater, the second heater, and the thermal baffle cooperating to form a sharp temperature gradient within the container for forming a single crystal of semiconductor alloy selected from the group consisting of CoSb.sub.3, RhSb.sub.3 and Co.sub.1-x-y Rh.sub.x Ir.sub.y Sb.sub.3 wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1.

15. Apparatus using liquid-solid phase sintering techniques to prepare a semiconductor alloy for use in fabricating thermoelectric elements comprising:

an isothermal furnace defined in part by a housing having a chamber with a heater disposed therein;

a container disposed within the chamber, with the container spaced intermediate from the interior surfaces of the chamber; and

a stoichiometric mixture of elemental materials selected from the group consisting of Co, Rh, Ir and Sb disposed within the container for forming polycrystalline ingots.

16. The apparatus as defined in claim 15 further comprising:

the container sealed with a vacuum formed therein;

a rod vertically disposed within the chamber and the container secured to one end of the rod; and

the lower portion of the container tapered towards the one end of the rod.

17. The apparatus as defined in claim 15 further comprising:

a layer of iridium powder disposed within the lower portion of the container adjacent to the rod; and

a layer of antimony disposed within the container above the iridium powder.

18. The apparatus as defined in claim 15 wherein the container further comprises:

a sealed vessel with a first elemental material layer and a second elemental material layer;

the first elemental material layer disposed within the lower portion of the sealed vessel, and the second elemental material layer disposed above the first material layer; and

the first elemental material layer selected from the group consisting of iridium, rhodium and cobalt, and the second elemental material layer comprising antimony.

19. The apparatus as defined in claim 15 wherein the stoichiometric mixture further comprises one layer of material having the formula:

Co.sub.1-x-y Rh.sub.x Ir.sub.y

wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1.

20. A method of preparing a semiconductor alloy having a skutterudite-type crystal lattice structure for use in fabricating thermoelectric elements comprising the steps of:

placing a first material selected from the group consisting of Ir, Rh and Co, and a second material comprising antimony in a container;

placing the container within a furnace with the second material vertically disposed above the first material;

heating the furnace to a preselected temperature to allow liquid-solid phase sintering of the first material and the second material; and

retaining the container within the furnace for a preselected length of time to allow formation of polycrystalline ingots of the semiconductor alloy having the desired skutterudite-type crystal lattice structure.

21. The method of preparing a semiconductor alloy as defined in claim 20, further comprising the steps of forming an elemental mixture having the general formula (TSb.sub.3) wherein T is provided by the first material and the elemental mixture is within .+-.2 atomic % of stoichiometry.

22. The method of preparing a semiconductor alloy as defined in claim 20, further comprising the steps of:

forming a vacuum in the container after the first and second layers of material have been placed therein; and

sealing the container to trap the vacuum with the first and second material disposed therein.

23. The method of preparing a semiconductor alloy as defined in claim 22 further comprising the step of forming the first material from a mixture of Ir, Co and Rh with the formula:

Co.sub.1-x-y Rh.sub.x Ir.sub.y

wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1.

24. The method of preparing a semiconductor alloy as defined in claim 20 further comprising the steps of:

heating the furnace to a temperature of at least 650.degree. C.; and

retaining the container in the furnace for at least fifteen minutes.

25. The method of preparing a semiconductor alloy as defined in claim 20 further comprising the step of vibrating a rod attached to the container for stirring the materials disposed within the container during growth of the skutterudite-type crystal lattice structure.

26. A method of preparing a semiconductor alloy having a skutterudite-type crystal lattice structure for use in fabricating thermoelectric elements comprising the steps of:

placing a first material selected from the group consisting of Ir, Rh and Co, and a second material comprising antimony in a container;

placing the container with the first material and second material vertically disposed within a furnace having two heaters;

heating the furnace to establish a preselected temperature gradient to melt the first and second materials to form a liquid and to grow a semiconductor crystal from the liquid by gradient freeze techniques; and

retaining the container within the furnace for a preselected length of time to allow growing the crystal of the semiconductor alloy having the desired skutterudite-type crystal lattice structure.

27. The method of preparing a semiconductor alloy as defined in claim 26, further comprising the steps of forming the first material from cobalt powder and the second material from antimony powder with an atomic ratio rich in antimony.

28. The method of preparing a semiconductor alloy as defined in claim 27, further comprising the steps of:

forming a vacuum in the container after the first and second materials have been placed therein; and

sealing the container to trap the vacuum with the first and second material disposed therein.

29. The method of preparing a semiconductor alloy as defined in claim 26 further comprising the step of forming the first material from a mixture of Ir, Co and Rh with the formula:

Co.sub.1-x-y Rh.sub.x Ir.sub.y

wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1.

30. The method of preparing a semiconductor alloy as defined in claim 26 further comprising the step of attaching one end of the container with a rod vertically disposed in the furnace.

31. A method of preparing a semiconductor alloy for use in fabricating thermoelectric elements from an approximately stoichiometric mixture comprising the steps of:

placing elemental powders selected from the group consisting of Ir, Rh, Co and Sb in a container to form the mixture;

placing the container with the mixture within an isothermal furnace; and

retaining the container and the mixture within the isothermal furnace for a preselected length of time to allow formation of the semiconductor alloyed powders having a skutterudite-type crystal lattice structure.

32. The method of preparing a semiconductor alloy as defined in claim 31, further comprising the steps of placing the alloyed powders in a graphite die container.

33. The method of preparing a semiconductor alloy as defined in claim 31, further comprising the step of retaining the container in the isothermal furnace for at least 30 minutes at a temperature not higher than 630.degree. C. to form the alloyed powders.

34. The method of preparing a semiconductor alloy as defined in claim 33 further comprising to steps of:

placing the alloyed powders in an isothermal furnace having a press;

applying pressure to the powders with the press for at least 30 minutes to form polycrystalline pellets; and

maintaining the isothermal furnace at a temperature of at least 650.degree. C.

35. The method of preparing a semiconductor alloy as defined in claim 31, further comprising the step of forming the mixture with the formula IrSb.sub.3.

36. The method of preparing a semiconductor alloy as defined in claim 31 further comprising the step of forming the mixture with the formula:

Co.sub.1-x-y Rh.sub.x Ir.sub.y Sb.sub.3

wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1.

37. A method of preparing a semiconductor alloy for use in fabricating thermoelectric elements from an approximately stoichiometric mixture comprising the steps of:

placing elemental powders selected from the group consisting of Ir, Rh, Co, and Sb in a container to form the mixture;

placing the container with the mixture into an isothermal furnace having a press; and

applying pressure to the mixture with the press for at least 30 minutes while maintaining the temperatu