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| United States Patent | 5634267 |
| Link to this page | http://www.wikipatents.com/5634267.html |
| Inventor(s) | Farnworth; Warren (Nampa, ID);
Wood; Alan (Boise, ID) |
| Abstract | A method and apparatus for fabricating known good semiconductor dice are
provided. The method includes the steps of: testing the gross
functionality of dice contained on a semiconductor wafer; sawing the wafer
to singulate a die; and then testing the die by assembly in a carrier
having an interconnect adapted to establish electrical communication
between the bond pads on the die and external test circuitry. The
interconnect for the carrier can be formed using different contact
technologies including: thick film contact members on a rigid substrate;
self-limiting contact members on a silicon substrate; or microbump contact
members with a textured surface. During assembly of the carrier, the die
and interconnect are optically aligned and placed into contact with a
predetermined contact force. This establishes an electrical connection
between the contact members on the interconnect and the bond pads of the
die. In the assembled carrier the die and interconnect are biased together
by a force distribution mechanism that includes a bridge clamp, a pressure
plate and a spring clip. Following testing of the die, the carrier is
disassembled and the tested die is removed. |
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Title Information  |
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Drawing from US Patent 5634267 |
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Method and apparatus for manufacturing known good semiconductor die |
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| Publication Date |
June 3, 1997 |
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| Filing Date |
November 14, 1994 |
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| Parent Case |
CROSS REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part of application Ser. No.
08/073,005 filed Jun. 7, 1993, now U.S. Pat. No. 5,408,190, which is a
continuation-in-part of application Ser. No. 07/709,858 filed Jun. 4,
1991, abandoned; application Ser. No. 07/788,065 filed Nov. 5, 1991 now
U.S. Pat. No. 5,440,240; and, application Ser. No. 07/981,956 filed Nov.
24, 1992 now U.S. Pat. No. 5,539,324.
This application is related to application Ser. No. 08/124,899 filed Sep.
21, 1993 now U.S. Pat. No. 5,495,179; application Ser. No. 08/046,675
filed Apr. 14, 1993 now U.S. Pat. No. 5,367,253; application Ser. No.
08/073,003 filed Jun. 7, 1993; application Ser. No. 08/120,628 filed Sep.
13, 1993 now abandoned; application Ser. No. 08/192,023 filed Feb. 3,
1994; application Ser. No. 07/896,297 filed Jun. 10, 1992 now U.S. Pat.
No. 5,424,652; application Ser. No. 08/192,391 filed Feb. 3, 1994; and,
application Ser. No. 08/137,675 filed Oct. 14, 1993 now abandoned. |
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Title Information  |
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Description  |
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FIELD OF THE INVENTION
This invention relates to semiconductor manufacture and more particularly
to a method and apparatus for manufacturing known good die.
BACKGROUND OF THE INVENTION
One of the fastest growing segments of the semiconductor industry is the
manufacture of multi-chip modules (MCM). Multi-chip modules are being
increasingly used in computers to form PC chip sets and in
telecommunication items such as modems and cellular telephones. In
addition, consumer electronic products such as watches and calculators
typically include multi-chip modules.
With a multi-chip module, non-packaged or bare dice (i.e., chips) are
secured to a substrate (e.g., printed circuit board) using an adhesive.
Electrical connections are then made directly to the bond pads on each die
and to electrical leads on the substrate. Non-packaged dice are favored
because the costs associated with manufacturing and packaging the dice are
substantially reduced. This is because the processes for packaging
semiconductor dice are extremely complex and costly.
This is illustrated with reference to FIG. 1. A fabrication process for a
packaged die begins with a semiconductor wafer on which a large number of
semiconductor dice have been formed by doping, masking, deposition of
metals, and etching a silicon substrate. Initially the wafer is probed and
mapped, step 10. Wafer mapping is performed to test the gross
functionality of the dice on the wafer. The nonfunctional dice are
mechanically marked or mapped in software. Next, the mapped wafer is
mounted on a carrying film, step 12. The carrying film allows the wafer to
be mechanically transported and provides support for the saw cutting
procedure.
Next, the dice are singulated using a diamond saw, step 14. Each singulated
die must then be attached to a metal lead frame, step 16. A single lead
frame supports several semiconductor dice for packaging and provides the
leads for the packaged die. Die attach to the lead frame is typically
accomplished using a liquid epoxy adhesive that must be cured with heat,
step 18. Next, a wire bond process, step 20, is performed to attach thin
bond wires to the bond pads on the die and to the lead fingers of the lead
frame. A protective coating such as a polyimide film is then applied to
the wire bonded die, step 22, and this coating is cured, step 24.
The semiconductor die is then encapsulated using an epoxy molding process,
step 26. Alternately premade ceramic packages with a ceramic lid may be
used to package the die. Next, the encapsulated die is laser marked for
identification, step 28. This is followed by an electrolytic deflash for
removing excess encapsulating material, step 30, an encapsulation cure,
step 32 and cleaning with a citric bath, step 34. Next, the lead frame is
trimmed and formed, step 36, to form the leads of the package, and the
leads are plated using a wave solder process (tin or plating), step 38.
This is followed by scanning, step 40, in which the packaged dice are
optically scanned for defects and then an inventory, step 42.
The packaged die is then subjected to a hot pregrade test, step 44 in which
it is tested and then marked, step 46. A series of burn-in tests, steps 48
and 50, and a hot final test, step 52 are then performed to complete the
testing procedure. This is followed by another scan, step 54, a visual
inspection, step 56, a quality control check, step 58, and packaging for
shipping, step 60. The finished goods are represented at step 62.
As is apparent, the packaging process (steps 16-40) for manufacturing
packaged dice requires a large amount of time, materials and capital
investment to accomplish. Thus one advantage of manufacturing bare or
unpackaged dice is that the above manufacturing process can be greatly
simplified because all of the packaging steps are eliminated. A
disadvantage of manufacturing unpackaged dice is that transport and
testing of the dice is more difficult to accomplish.
With unpackaged dice, semiconductor manufacturers are required to supply
dice that have been tested and certified as known good die (KGD).
Known-good-die (KGD) is a collective term that connotes unpackaged die
having the same quality and reliability as the equivalent packaged
product. This has led to a need in the art for manufacturing processes
suitable for fabricating and testing bare or unpackaged semiconductor die.
For test and burn-in of bare die, a carrier must replace a conventional
single chip package in the manufacturing process. The carrier includes an
interconnect that allows a temporary electrical connection to be made
between external test circuitry and the bond pads of the die. In addition,
such a carrier must be compatible with semiconductor manufacturing
equipment and allow the necessary test procedures to be performed without
damaging the die. The bond pads on a die are particularly susceptible to
damage during the test procedure.
In response to the need for unpackaged die, different semiconductor
manufacturers have developed carriers for testing known good die. As an
example, carriers for testing unpackaged die are disclosed in U.S. Pat.
No. 4,899,107 to Corbett et al. and U.S. Pat. No. 5,302,891 to Wood et
al., which are assigned to Micron Technology, Inc. Other carriers for
unpackaged die are disclosed in U.S. Pat. No. 5,123,850 to Elder et al.,
and U.S. Pat. No. 5,073,117 to Malhi et al., which are assigned to Texas
Instruments.
One of the key design considerations for a carrier is the method for
establishing electrical communication between the die and interconnect.
With some carriers, the die is placed face down in the carrier and biased
into contact with the interconnect. The interconnect includes contacts
that physically align with and contact the bond pads or test pads of the
die. Exemplary contact structures include wires, needles, and bumps. The
mechanisms for making electrical contact include piercing the native oxide
of the bond pad with a sharp point, breaking or burnishing the native
oxide with a bump, or moving across the native oxide with a contact
adapted to scrub away the oxide. In general, each of these contact
structures is adapted to form a low-resistance "ohmic contact" with the
bond pad. Low-resistance is a negligible resistance. An ohmic contact is
one in which the voltage appearing across the contact is proportional to
the current flowing for both directions of current flow. Other design
considerations for a carrier include electrical performance over a wide
temperature range, thermal management, power and signal distribution, and
the cost and reusability of the carrier.
The present invention is directed to a method for manufacturing known good
die. In addition, the present invention is directed to an apparatus for
manufacturing known good die including carriers for testing bare die and
apparatus for automatically loading and unloading bare die into the
carriers.
OBJECTS OF THE INVENTION
Accordingly, it is an object of the present invention to provide an
improved method for manufacturing known good die.
It is yet another object of the present invention to provide improved
apparatus for manufacturing known good die.
It is a further object of the present invention to provide an improved
method for manufacturing known good die utilizing carriers adapted to test
and burn-in a bare, unpackaged die without damage to the die.
It is a still further object of the invention to provide a method for
manufacturing known good die utilizing carriers that are reusable and easy
to assemble, that provide a reliable electrical connection with contact
locations on a die over a wide temperature range, and that can be easily
adapted to testing of different types of dice.
It is a still further object of the present invention to provide a method
and apparatus for manufacturing known good die that are efficient,
reliable and suitable for large scale semiconductor manufacture.
Other objects, advantages and capabilities of the present invention will
become more apparent as the description proceeds.
SUMMARY OF THE INVENTION
In accordance with the present invention, a method and apparatus for
manufacturing known good die are provided. The method of the invention,
generally stated, includes the steps of: fabricating a semiconductor wafer
containing a plurality of dice; testing the gross functionality of the
dice and mapping the wafer; sawing the wafer into discrete die; assembling
each discrete die in a carrier having an interconnect and a force
distribution mechanism adapted to bias the die and interconnect together;
testing the die using the carrier and recording the test data;
disassembling the carrier to remove the tested die; and then continuing
processing of the tested die for shipment.
The carrier is adapted to retain the die under test and provide a temporary
electrical connection between the die and external test circuitry. This
enables burn-in and other test procedures to be performed on the die. The
carrier includes a carrier base with external connectors and an
interconnect for establishing temporary electrical communication between
the die and the external connectors.
In addition to the base and temporary interconnect, the carrier includes a
force distribution mechanism for retaining and biasing the die and the
interconnect together. The force distribution mechanism includes a bridge
clamp, a spring clip and a pressure plate. The carrier base, interconnect
and force distribution mechanism are designed for efficient assembly and
disassembly of the carrier with a die.
The temporary interconnect is formed in a configuration which accommodates
a particular die bondpad configuration (e.g., peripheral, array, edge
connect, end connect, lead over chip (LOC)) and bondpad structure (e.g.,
flat pad, solder ball, bumped pad). Different types of interconnects are
thus interchangeable to allow testing of the different types of
semiconductor dice using a universal carrier. The interconnect includes
raised contact members for contacting contact locations (e.g., bond pads,
test pads) on the die to form an electrical connection. The contact
members are shaped to accommodate flat or raised (e.g., bumped pad)
contact locations on the die. Electrical communication between the contact
members on the interconnect and the external connectors on the carrier
base is provided by conductive traces on the interconnect. The conductive
traces are electrically attached to the external connectors on the carrier
using wire bonding or a mechanical connection.
Different contact technologies may be employed to form the interconnect. As
an example, the interconnect may be formed with a rigid electrically
non-conductive substrate (e.g., ceramic, silicon) and thick film contact
members formed using an ultrasonic forging process. Alternately the
interconnect may formed with silicon substrate and raised silicon contact
members having oxide-penetrating blades. The interconnect may also be
formed with microbump contact members mounted on a rigid substrate. The
microbump contact members can be plated with an oxide penetrating textured
metal layer.
During assembly of the carrier and die, the interconnect is placed in the
carrier and the die is attached to the pressure plate of the force
distribution mechanism using a vacuum. The die and interconnect are
optically aligned using a vision system. The die is then placed into
contact with the interconnect with a predetermined force so that the
contact members on the interconnect form an electrical connection with the
contact locations on the die. At the same time the bridge clamp of the
force distribution mechanism is attached to the carrier for biasing the
die and interconnect together to maintain the electrical connections. The
assembled carrier is then tested using suitable burn-in test equipment.
Following the test procedure, the carrier is disassembled and the tested
die is removed.
This assembly procedure may be performed manually using an optical
alignment system similar to an aligner bonder used for flip chip bonding.
Alternately an apparatus for automatically assembling and disassembling
the carrier can be provided. The automated assembly/disassembly apparatus
includes a pick and place system for picking a die from a mapped, saw-cut
wafer; a vision alignment system for aligning the die and interconnect;
and a robot, responsive to the vision alignment system, that attaches the
die to the force distribution mechanism and then attaches the force
distribution mechanism to the carrier base. Each carrier is marked with a
bar code so that a die can be tracked through the assembly and testing
procedures.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a block diagram illustrating a prior art semiconductor
manufacturing process for manufacturing packaged die;
FIG. 2 is a block diagram illustrating the method of the invention for
manufacturing known good die;
FIG. 3 is a perspective view of a carrier suitable for manufacturing known
good die in accordance with the method of the invention;
FIG. 3A is a cross sectional view taken along section line 3A--3A of FIG.
3;
FIG. 4 is a plan view showing an interconnect for the carrier of FIG. 3 and
illustrating the wire bonding between the interconnect and carrier;
FIG. 4A is a cross section showing a contact member for the interconnect of
FIG. 4;
FIG. 4B is a cross section taken along section line 4B--4B of FIG. 4
showing the contact member in contact with a bond pad of a semiconductor
die;
FIG. 5 is a cross sectional view of an interconnect having a raised contact
member formed of silicon shown engaging a die and illustrating the self
limiting raised portions of the contact member;
FIG. 5A is an enlarged portion of the raised silicon contact member shown
in FIG. 5 and showing the oxide penetrating raised portions of the contact
members;
FIGS. 5B-5G are plan views illustrating different layouts of raised
portions for forming contact members;
FIGS. 6-6B are cross sectional views of alternate embodiment interconnects
formed with microbump contact members;
FIG. 7 is a schematic diagram illustrating an assembly procedure for
aligning the die and interconnect;
FIG. 8 is a block diagram illustrating a process flow for automatically
assembling and disassembling the die and carrier; and
FIG. 9 is a schematic plan view of an assembly/disassembly apparatus
suitable for use with the method of the invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
Referring now to FIG. 2, the method of the invention is illustrated in a
flow diagram. During the semiconductor manufacturing process a
semiconductor wafer is fabricated with a large number of dice. The wafer
is formed by patterning and doping a semiconducting substrate and then
depositing, patterning and etching various layers of material on the
substrate to form integrated circuits. Initially, the wafer is subjected
to probe testing to ascertain the gross functionality of the dice
contained on the wafer. Each die is given a brief test for functionality,
and the nonfunctional die are mechanically marked or mapped in software,
step 64. Wafer probe includes various functional and parametric tests of
each die. Test patterns, timing voltage margins, limits and test sequence
are determined by individual product yields and reliability data.
Four testing level | | |