An amorphous semiconductor thin film light emitting diode comprising of a first electrode metal sheet substrate, amorphous semiconductor layers and a second optically transparent electrode. The first electrode metal sheet substrate acts as the support of the electrode and provides ruggedness, good thermal stability and dissipation of heat, good reflectance and flexibility. The device may further include electrically insulating layers which cause a pattern of light to be emitted by the diode, by controlling the passage of current through areas of the amorphous semiconductor layers.
An illumination device configured so as to produce a uniform illumination distribution incorporating one or more LEDs fabricated such that the top surface emitting the colored light is not obstructed by an electrode or by contacts connecting the LED to a current source. Such a configuration is accomplished by providing a substantially transparent attachment layer that may include an opaque conductive material, but preferably includes transparent conductive particles that, in combination, attach and electrically connect the LED to an electrode disposed upon a substrate.
The present invention is a method of manufacturing a light emitting display panel, which includes a laminated structure formed by laminating at least a flexible base layer, a first electrode layer, an EL layer, a second electrode layer and a flexible sealing layer in that order. The flexible base layer is provisionally attached to a rigid flat plate, and thereafter supplied to a main manufacturing step of the light emitting display panel. According to the feature, no significant unevenness in the thicknesses of layers formed on or above the flexible base layer is generated. Therefore, a light emitting display panel whose light emitting strength is uniform can be produced.
A novel light-emitting device includes a sapphire substrate with a light-emitting layer comprising In.sub.X Ga.sub.1-X N, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength .lambda. of emitted light.
A novel light-emitting device includes a saphire substrate with a light-emitting layer comprising In.sub.X Ga.sub.1-X N, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength .lambda. of emitted light.
A semiconductor optical radiation package includes a leadframe, at least one semiconductor optical radiation emitter and an encapsulant. The leadframe has a heat extraction member, which supports the semiconductor optical emitter and provides one or more thermal paths for removing heat generated within the emitter to the ambient environment, as well as at least two electrical leads for providing electrical coupling to the semiconductor optical radiation emitter. The encapsulant covers and protects the emitter and optional wire bonds from damage and allows radiation to be emitted from the emitter into the ambient environment. The semiconductor optical radiation package provides high emitted flux and is preferably compatible with automated processing techniques.
