The invention relates to a storage device for storage of information using field emission comprising two spaced apart members. Each member comprises a plurality of parallel conducting lines having adsorbates disposed thereon. The lines are disposed on a nonconductive substrate. The members are positioned with the parallel conducting lines of each member facing each other without planar alignment of the lines of one member with the lines of the other member.
A preferred data storage system includes a memory storage device that incorporates a storage medium and electron beam emitters which are configured to electrically communicate with the storage medium. The storage medium and the emitters are configured to move relative to each other so that each emitter may provide a beam of electrons within a respective coverage area of the storage medium. Each coverage area includes at least one storage area which is configurable in at least two structural states, which represent information stored in the storage areas. A data recovery system also is provided which is communicatively coupled with the memory storage device. The data recovery system is configured to determine whether a first emitter of the memory storage device has failed and to recover information stored in at least one of the storage areas of the first emitter with a second emitter of the memory storage device. Computer readable media and methods also are provided.
A sensing contact probe includes a beam support and a probe. The probe has a bent beam body that extends from the beam support to a probe tip face that has a position and faces in an angular direction. The bent beam body has first and second beam layers bonded together and have differing residual stresses that bend the beam body. A stress relief region is formed in the bent beam body. The stress relief region has an adjusted stress property that adjusts the bending to control the probe tip face position and angular direction.
