Method and apparatus for writing to memory components

Claims

What is claimed is:

1. A method for writing data to a memory array, comprising the steps of:

(a) addressing a row of data in the memory array;

(b) sensing the addressed row of data;

(c) issuing over a data bus a plurality of byte masks for storage in a byte mask memory;

(d) issuing over the data bus write data to be written to the memory array;

(e) selecting one of the plurality of byte masks stored in the byte mask memory; and

(f) writing the write data to the sensed row of data in accordance with the selected byte mask.

2. The method of claim 1, wherein the write data issuing step (d) comprises the step of selectively issuing first color data and second color data on a bit-by-bit basis.

3. The method of claim 1, further comprising the step of addressing a first column of the sensed row of data;

wherein the writing step (f) comprises the step of writing the write data to the addressed first column in accordance with the selected byte mask; and

wherein the method further comprises the steps of:

(g) selecting another one of the plurality of byte masks stored in the byte mask memory while the addressed row of data is sensed;

(h) issuing, while the addressed row of data is sensed, second write data to be written to the memory array;

(i) addressing a second column of the sensed row of data; and

(j) writing the second write data to the addressed second column in accordance with the selected other byte mask.

4. The method of claim 3, wherein the second write data issuing step (h) is performed during the second column addressing step (i), and

wherein the selecting step (g) is performed prior to the second write data issuing step (h).

5. The method of claim 1, wherein the write data has m bytes of b bits of data, wherein m is a positive integer greater than or equal to one and b is a positive integer greater than or equal to eight.

6. The method of claim 5, wherein the plurality of byte masks have m*q bits, wherein q is a positive integer greater than or equal to seven.

7. The method of claim 1, further comprising the step of issuing a bit mask over the data bus, and

wherein the writing step (f) includes the step of writing the write data to the sensed row of data in accordance with the selected byte mask and in accordance with the bit mask.

8. The method of claim 7, wherein the bit mask issuing step comprises the step of issuing the bit mask over the data bus for storage in a bit mask memory in order to write the write data to the sensed row of data in accordance with the selected byte mask and in accordance with the bit mask.

9. The method of claim 7, further comprising the steps of:

issuing the bit mask over the data bus for storage in a register configured to store either the bit mask or the write data; and

issuing the write data over the data bus in order to write the write data to the sensed row of data in accordance with the selected byte mask and in accordance with the bit mask.

10. A memory system, comprising:

a memory array having independent address inputs, mask inputs, and data inputs; and

a memory interface, coupled to the memory array, for issuing a row address over the address inputs to sense a row of data in the memory array;

the memory interface comprising:

(i) a byte mask memory, and

(ii) control circuitry, coupled to the byte mask memory, the mask inputs, and the data inputs, for storing in the byte mask memory a plurality of byte masks and for issuing over the data inputs write data to be written to the memory array,

the control circuitry for selecting one of the byte masks stored in the byte mask memory and for controlling the mask inputs in order to write the write data to the sensed row of data in accordance with the selected byte mask.

11. The memory system of claim 10, wherein the control circuitry issues the write data by selectively issuing first color data and second color data on a bit-by-bit basis.

12. The memory system of claim 10, wherein the memory interface issues a first column address over the address inputs to address a first column in the sensed row of data and issues a second column address over the address inputs to address a second column in the sensed row of data;

wherein the control circuitry issues the write data over the data inputs in order to write the write data to the addressed first column in accordance with the selected byte mask; and

wherein the control circuitry selects another one of the plurality of byte masks stored in the byte mask memory, and issues over the data inputs second write data to be written to the memory array in order to write the second write data to the addressed second column in accordance with the selected other byte mask.

13. The memory system of claim 12, wherein the control circuitry issues the second write data during the addressing of the second column and selects the other byte mask prior to the issuance of the second write data.

14. The memory system of claim 10, wherein the write data has m bytes of b bits of data, wherein m is a positive integer greater than or equal to one and b is a positive integer greater than or equal to eight.

15. The memory system of claim 14, wherein the plurality of byte masks have m*q bits, wherein q is a positive integer greater than or equal to seven.

16. The memory system of claim 10, wherein the control circuitry issues a bit mask in order to write the write data to the sensed row of data in accordance with the selected byte mask and in accordance with the bit mask.

17. The memory system of claim 16, wherein the memory interface comprises a bit mask memory for storing the bit mask, the control circuitry issuing the bit mask from the bit mask memory in order to write the write data to the sensed row of data in accordance with the selected byte mask and in accordance with the bit mask.

18. The memory system of claim 16, wherein the memory interface further comprises a register configured to store either the bit mask or the write data, wherein the control circuitry for storing the bit mask in the register and for issuing the write data,

the control circuitry for issuing the bit mask over the mask inputs from the register and for issuing the write data over the data inputs from the data bus in order to write the write data to the sensed row of data in accordance with the selected byte mask and in accordance with the bit mask.

19. A method for writing data to a memory array, comprising the steps of:

(a) addressing a row of data in the memory array;

(b) sensing the addressed row of data;

(c) issuing a first byte mask;

(d) issuing first write data to be written to the memory array;

(e) addressing a first column of the sensed row of data;

(f) writing the first write data to the addressed first column in accordance with the first byte mask;

(g) issuing a second byte mask while the addressed row of data is sensed;

(h) issuing, while the addressed row of data is sensed, second write data to be written to the memory array;

(i) addressing a second column of the sensed row of data; and

(j) writing the second write data to the addressed second column in accordance with the second byte mask.

20. The method of claim 19, wherein the first byte mask issuing step (c) comprises the step of issuing the first byte mask over a data bus for storage in a byte mask memory, and

wherein the first write data issuing step (d) comprises the step of issuing the first write data over the data bus in order to write the first write data to the addressed first column in accordance with the first byte mask stored in the byte mask memory.

21. The method of claim 19, wherein the first write data issuing step (d) comprises the step of selectively issuing first color data and second color data on a bit-by-bit basis.

22. The method of claim 19, wherein the first write data has m bytes of b bits of data, wherein m is a positive integer greater than or equal to one and b is a positive integer greater than or equal to eight.

23. The method of claim 22, wherein the first byte mask has m bits of data for masking the first write data.

24. The method of claim 19, comprising the step of issuing a bit mask, and

wherein the writing step (f) comprises the step of writing the first write data to the addressed first column in accordance with the bit mask and in accordance with the first byte mask.

25. The method of claim 24, wherein the bit mask issuing step comprises the step of issuing the bit mask over a data bus for storage in a bit mask memory in order to write the first write data to the addressed first column in accordance with the bit mask stored in the bit mask memory and in accordance with the first byte mask.

26. The method of claim 24, further comprising the steps of:

issuing the bit mask over a data bus for storage in a register configured to store either the bit mask or the write data; and

issuing the first write data over the data bus in order to write the first write data to the addressed first column in accordance with the bit mask and in accordance with the first byte mask.

27. A memory system, comprising:

a memory array having independent address inputs, mask inputs, and data inputs; and

a memory interface, coupled to the memory array, for issuing a row address over the address inputs to sense a row of data in the memory array, for the memory interface issuing a first column address over the address inputs to address a first column in the sensed row of data, and for issuing a second column address over the address inputs to address a second column in the sensed row of data;

the memory interface comprising:

(i) a byte mask memory, and

(ii) control circuitry, coupled to the byte mask memory, the mask inputs, and the data inputs, for issuing a first byte mask and a second byte mask, controlling the mask inputs based on the first or second byte masks, and for issuing first write data and second write data over the data inputs, and

the control circuitry for issuing the first byte mask and the first write data in order to write the first write data to the addressed first column in accordance with the first byte mask and for issuing the second byte mask and the second write data in order to write the second write data to the addressed second column in accordance with the second byte mask.

28. The memory system of claim 27, wherein the control circuitry issues the first write data by selectively issuing first color data and second color data on a bit-by-bit basis.

29. The memory system of claim 27, wherein the first write data has m bytes of b bits of data, wherein m is a positive integer greater than or equal to one and b is a positive integer greater than or equal to eight.

30. The memory system of claim 29, wherein the first byte mask has m bits of data for masking the first write data.

31. The memory system of claim 27, wherein the control circuitry issues a bit mask in order to write the first write data to the addressed first column in accordance with the first byte mask and in accordance with the bit mask.

32. The memory system of claim 31, wherein the memory interface comprises a bit mask memory for storing the bit mask, the control circuitry issuing the bit mask from the bit mask memory in order to write the first write data to the addressed first column in accordance with the first byte mask and in accordance with the bit mask.

33. The memory system of claim 31, wherein the memory interface further comprises a register configured to store either the bit mask or the first write data, wherein the control circuitry for storing the bit mask in the register and for issuing the first write data,

the control circuitry for issuing the bit mask over the mask inputs from the register and for issuing the first write data over the data inputs from the data bus in order to write the first write data to the addressed first column in accordance with the first byte mask and in accordance with the bit mask.

34. The method of claim 7, comprising the steps of:

issuing the write data over the data bus for storage in a register configured to store either the bit mask or the write data; and

issuing the bit mask over the data bus in order to write the write data to the sensed row of data in accordance with the first byte mask and in accordance with the bit mask.

35. The memory system of claim 16, wherein the memory interface further comprises a register configured to store either the bit mask or the write data, wherein the control circuitry for storing the write data in the register and for issuing the bit mask,

the control circuitry for issuing the bit mask over the mask inputs from the data bus and the write data over the data inputs from the register in order to write the write data to the sensed row of data in accordance with the selected byte mask and in accordance with the bit mask.

36. The method of claim 24, further comprising the steps of:

issuing the first write data over a data bus for storage in a register configured to store either the bit mask or the write data; and

issuing the bit mask over the data bus in order to write the first write data to the addressed first column in accordance with the bit mask and in accordance with the first byte mask.

37. The memory system of claim 31, wherein the memory interface further comprises a register configured to store either the bit mask or the first write data, wherein the control circuitry for storing the first write data in the register and for issuing the bit mask,

the control circuitry for issuing the bit mask over the mask inputs from the data bus and for issuing the first write data over the data inputs from the register in order to write the first write data to the addressed first column in accordance with the first byte mask and in accordance with the bit mask.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to the control of data to be written to memory components. More particularly, the present invention relates to a structure and method for implementing bit and byte enable signals and logic during write operations to memory components.

2. Art Background

FIG. 1 shows some of the common features of modern solid-state memory components. The memory components contain a two dimensional array of storage cells. These storage cells may be static (i.e. there is a bistable latch) or dynamic (i.e. there is a single capacitor holding a charge). A row of storage cells is read when a row address is applied to the row decoder and the appropriate read control signals are asserted. This entire row is held in a row of column amplifiers (sense amplifiers) which are typically static in nature. Any subset of this sensed row may be accessed via column addresses and control signals.

A write operation requires additional control. It is important to be able to write to a subset of a row. This is typically done as a two step process (although in a static memory component it may be done as a single step). The information to be written is placed on the write data signal lines. The write enable signal is asserted for only those bits of a row which have been selected by the column select circuitry and which are to be modified. Write enable signals are not asserted for the remaining bits. The Read/Write Column signal is then asserted, permitting those sense amplifiers of the row with the write enable signal asserted to be modified with the write data received across the write data signal lines. Subsequently, using the write row signals, the entire row may be rewritten from the column amplifiers back to the RAM array, with the subset of the storage cells modified according to the modified bits in the column amplifiers.

This technique works because the sense amplifier retains previous data written to the sense amplifier if the two write drivers driven by the write enable are allowed to float (write enable is not asserted). Although internally there is typically a write enable signal for each bit of write data, these signals are not available externally; therefore, most memory components are incapable of modifying any pattern of bits within a row.

FIG. 3 shows an example of a prior art memory component with byte enable controls for write masking. FIG. 3, and succeeding figures, use the notation set forth in FIG. 2.

In the prior art memory components, the value of m is typically one or two. The memory array 110 and the data receiver 115 typically transact the same quantum of information (m*b bits). There are typically "m" write enable signals for masking the individual bytes of write data within this transaction quantum, where m represents the number of bytes of data communicated by the memory component. The masking is controlled by the byte enable controls 120. The copy block duplicates the bit on the one input wire onto the "b" output wires.

FIGS. 4 and 5 illustrate another example of prior art in which the memory component includes a bit enable register (BitMask) 180 and write data register (WriteReg) 185. In addition to the byte enable control lines shown in the previous example of FIG. 3, two loadable internal registers, BitMask 180 and WriteReg 185 are connected to the receiver 190 for the data lines 195. Two multiplexers 200, 205 are provided for selecting the receiver 190 contents (the receivers typically have register or latch storage elements) or the contents of the two loadable registers 180, 185 for input to the write enable 210 and write data 215 input pins of the memory array 220.

As set forth in FIG. 4, this configuration permits several modes of operation. The first mode provides the functionality of the previous example set forth in FIG. 3. The second and sixth modes provide additional functionality.

FIG. 6 illustrates a simplified timing diagram for the second mode. It should be noted that the signals for the row and column portions of the address are multiplexed together. In a typical operation, a row address is received and latched by the memory component, and followed by multiple column addresses in subsequent clock cycles to access the sensed row. Referring to FIGS. 5 and 6, when the row address Row[a] is received on the address lines 225, the BitMask[a] value is also received on the data lines 195. The BitMask[a] value is latched by the bit mask register 180, and is used to perform bit masking on incoming data until a new value is received to overwrite it.

When each column address Col[a,i] is received on the address lines 225, the WData[a,i] value is also received on the data lines 195. This value is held in the receiver 190, and is used to drive the write data inputs 215 of the memory array 220. This is repeated for "n" different values of WData, using the same value of BitMask stored in the bit mask register 180. When the next row address Row[b] is received on the Address lines 225, a new BitMask[b] value is also received on the data lines 195. A second series of column write operations is then performed with the new bit mask value.

FIG. 7 shows a simplified timing diagram for Mode Six. Referring to FIGS. 5 and 7, when the row address Row[a] is received on the address lines 225, the WData[a] value is also received on the data lines 195. This value is latched by the WriteReg register 185, and is used until a new WData value is received and overwrites the value in the register 185. Thus, when each column address Col[a,i] is received on the address lines 225, the BitMask[a,i] value is also received on the data lines 195. This value is held in the receiver 190, and subsequently drives the Write enable inputs 210 of the Memory Array 220. This is repeated for "n" different values of the bit mask, using the same value stored in the WriteReg 185.

When the next row address Row[b] is received on the address lines 225, a new WData[b] value is also received on the data lines 195. A second series of column write operations is then performed using the new WData[b] value.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a sophisticated level of bit and byte masking in a memory system.

It is an object of the present invention to provide a memory system which can receive a new bit mask with each "m*b" bits of write data sent to the memory array.

In the memory system of the present invention, additional operating modes are provided to enhance the functionality and performance of the memory system. In one embodiment, a unique bit mask is supplied with the write data used in each column access. In an alternate embodiment, a bit mask register and byte mask register are provided to support bit level and byte level masking. Alternatively, the bit mask and write data Register are realized as a single register to provide the same functionality. These two registers are realized as a single register to provide the functionality while minimizing component space and cost.

In another embodiment, a separate bit mask and byte mask are provided. The byte mask is loaded with mask data in one cycle and is used during the next "b" column write accesses. This structure provides for operating modes with no bit masking, with bit masks supplied for every row access and with bit masks supplied with every column access.

In order to enhance the functionality of a system, such as a two-dimensional graphics system, in an alternate embodiment, the memory system is provided with two registers and a select control line to select data from one of two registers. In a computer graphics system, this is used to select between foreground and background colors. The embodiment can be utilized in conjunction with the other embodiments described to provide enhanced functionality and performance.

BRIEF DESCRIPTION OF THE DRAWINGS

The objects, features and advantages of the present invention will be apparent from the following detailed description in which:

FIG. 1 is a block diagram illustration of the internal structure of a memory component.

FIG. 2 is a table which sets forth the notation for the block diagrams shown.

FIG. 3 is a block diagram illustration of a prior art memory system with byte enable control.

FIG. 4 is a table illustrating the possible operating modes in the prior art memory system of FIG. 5.

FIG. 5 is a block diagram illustration of a prior art memory system with a bit enable register.

FIGS. 6 and 7 are illustrations of the timing for two modes of the prior art memory system of FIG. 5.

FIG. 8 is a block diagram illustration of one embodiment of the memory system of the present invention.

FIGS. 9a and 9b illustrate the timing for two modes of the memory system of the present invention.

FIG. 10 is a block diagram illustration of one embodiment of the memory system of the present invention.

FIG. 11 is a block diagram illustration of an alternate embodiment of the memory system of the present invention.

FIG. 12 illustrates the timing for one mode of the memory system of the present invention illustrated in FIG. 11.

FIG. 13 is a block diagram illustration of an alternate embodiment of the memory system of the present invention.

FIG. 14 illustrates the timing for one mode of the embodiment shown in FIG. 13.

FIG. 15 is a table summarizing the operating modes available for the different embodiments of the memory system of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following description, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one skilled in the art that these specific details are not required in order to practice the present invention. In other instances, well known electrical circuits and structures are shown in block diagram form in order not to obscure the present invention unnecessarily.

FIG. 8 is a block diagram of one embodiment. The data paths are similar to those shown in FIG. 5. However, control logic 187, provides the control signals necessary for the data and bit mask transfer as shown by the timing diagrams of FIGS. 9a and 9b.

FIGS. 9a and 9b respectively illustrate the timing for two new modes hereinafter referred to as modes seven and eight, in accordance with the teachings of the present invention.

Referring to FIG. 9a, the row address Row[a] is received on the address lines. Prior to the issuance of each column address Col[a,i], a BitMask[a,i] value is received and latched into the BitMask register. When each column address Col[a,i] is received on the address lines, the WData[a,i] value is also received on the Data wires. This WData[a,i] value is held in the receiver, and is subsequently used to drive the write data inputs to the memory array. This two cycle sequence is repeated for "n" different pairs of BitMask and WData values. Each column address can be received during the mask data cycle to provide more time to perform the access.

Mode seven, as illustrated in FIG. 9a, provides a significant performance advantage over, for example, mode two for the situation when a different bit mask must be applied to each piece of data to be written (WriteData) during a write operation. Mode seven of the system of the present invention is able to perform a write operation to the memory array in every two clock cycles of the interface, whereas mode two requires a new row access operation to apply a different bit mask to each piece of WriteData. As is well known in the art, a new row access typically takes four to eight times as long as a column access.

FIG. 9b illustrates the timing for Mode eight. The row address Row[a], and column addresses Col[a,l]-Col[a,n] are received on the address lines. Prior to receipt of each column address Col[a,i], a WData[a,i] value is received on the data lines and latched into the WriteReg register. When each column address Col[a,i] is received on the address lines, the BitMask[a,i] value is also received on the data lines. This value is held in the receiver, and drives the write enable inputs of the memory array. This two cycle sequence is repeated for "n" different pairs of WData and BitMask. The column address can be received when the write data is received, thereby providing more time to perform the access.

Mode eight is thus very similar to mode seven, with the only difference being the order in which BitMask and WData are supplied in each column write cycle. Thus, the same performance advantages are realized.

There are several trends in memory component design which will affect the techniques used for write control. These trends include the increase of interface speed (receivers and transmitters) relative to the speed of the memory array, and the multiplexing of control information onto data lines.

FIG. 10 illustrates a memory array and interface circuit. Referring to FIG. 10, the impact of increasing interface speed on a memory component can be shown. The number of data lines (d) 300 is less than the number of write data and write enable lines 305, 310 (m*b). The ratio of m*b/d is the same as the ratio of the cycle time of the memory array compared to the bit transmission across a time of a data line. With an aggressive interface technology this ratio might be eight or greater.

The greater the ratio, the larger the size of the BitMask and WriteReg registers. One optimization is to combine the two registers into a single BitMask register 320. At any time, this register holds either the bit mask or write data. Any drawbacks incurred for combining the registers is