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Claims  |
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What is claimed is:
1. A monolithic ceramic capacitor composed of
a plurality of dielectric ceramic layers,
a plurality of inner electrodes each of which is disposed between a pair of
adjacent dielectric ceramic layers and arranged in such a manner that one
end of each inner electrode is exposed out of an end of the dielectric
ceramic layers, and
outer electrode electrically connected with an exposed inner electrode,
the monolithic ceramic capacitor being characterized in that
the dielectric ceramic layers comprise a barium titanate having a content
of alkali metal oxide impurities of about 0.02% by weight or less, and
having the compositional formula:
(1-.alpha.-.beta.) {BaO}.sub.m.TiO.sub.2 +.alpha.{(1-x)M.sub.2 O.sub.3
+xRe.sub.2 O.sub.3}+.beta.(Mn.sub.1-y-z Ni.sub.y Co.sub.z)O
where
Re.sub.2 O.sub.3 is one or more selected from Gd.sub.2 O.sub.3, Tb.sub.2
O.sub.3 and Dy.sub.2 O.sub.3 ;
M.sub.2 O.sub.3 is one or more selected from Sc.sub.2 O.sub.3 and Y.sub.2
O.sub.3 and
.alpha., .beta., m, x, y and z are as follows:
0.0025.ltoreq..alpha..ltoreq.0.025
0.0025.ltoreq..beta..ltoreq.0.05
.beta./.alpha..ltoreq.4
0<x.ltoreq.0.50
0.ltoreq.y<1.0
0.ltoreq.z<1.0
0.ltoreq.y+z<1.0
1.000<m.ltoreq.1.035;
magnesium oxide in an amount of from about 0.5 to 5.0 mols, in terms of MgO
relative to 100 mols of the titanate, and
from 0.2 to 3.0 parts by weight, relative to 100 parts by weight of said
titanate and magnesium oxide of a Li.sub.2 O--(Si,Ti)O.sub.2 --Al.sub.2
O.sub.3 --ZrO.sub.2 oxide; and
wherein the inner electrodes comprise nickel or a nickel alloy.
2. The monolithic ceramic capacitor as claimed in claim 1, wherein the
Li.sub.2 O--(Si,Ti)O.sub.2 --Al.sub.2 O.sub.3 --ZrO.sub.2 oxide falls
within the compositional range surrounded by six lines formed by
connecting the six points, representing mol %, of:
A (20, 80, 0)
B (10, 80, 10)
C (10, 70, 20)
D (35, 45, 20)
E (45, 45, 10)
F (45, 55, 0)
in a triangular diagram of {Li.sub.2 O, (Si.sub.w Ti.sub.1-w)O.sub.2, M},
in which 0.30.ltoreq.w.ltoreq.1.0, and M is at least one member selected
from the group consisting of Al.sub.2 O.sub.3 and ZrO.sub.2, and provided
that w<1.0 for a composition on the line A-F.
3. The monolithic ceramic capacitor as claimed in claim 2, wherein the
impurities are less than about 0.015%, 0.004.ltoreq..alpha..ltoreq.0.02,
0.009.ltoreq..beta..ltoreq.0.04, .beta./.alpha..ltoreq.2, x is abut
0.1-0.4, y is about 0.1-0.8, z is about 0.3-0.8, y+z is about 0.3-0.8, m
is about 1.01-1.035, 0.4.ltoreq.w>0.9, and said Li.sub.2 O--(Si,Ti)O.sub.2
--Al.sub.2 O.sub.3 --ZrO.sub.2 oxide is about 0.8-2 parts.
4. The monolithic ceramic capacitor as claimed in claim 3 having two
separate outer electrodes on the outside surface of the capacitor, each of
which is electrically connected to an inner electrode.
5. The monolithic ceramic capacitor as claimed in claim 4, wherein the
outer electrodes comprise a sintered layer of an electroconductive metal
powder optionally containing a glass frit.
6. The monolithic ceramic capacitor as claimed in claim 5, wherein the
outer electrodes are composed of a first sintered layer of an
electroconductive metal powder optionally containing a glass frit added
thereto, and a second plated layer formed on the first layer.
7. The monolithic ceramic capacitor as claimed in claim 2, having two
separate outer electrodes on the outside surface of the capacitor, each of
which is electrically connected to an inner electrode.
8. The monolithic ceramic capacitor as claimed in claim 7, wherein the
outer electrodes comprise a sintered layer of an electroconductive metal
powder optionally containing a glass frit.
9. The monolithic ceramic capacitor as claimed in claim 8, wherein the
outer electrodes are composed of a first sintered layer of an
electroconductive metal powder optionally containing a glass frit added
thereto, and a second plated layer formed on the first layer.
10. The monolithic ceramic capacitor as claimed in claim 1 having two
separate outer electrodes on the outside surface of the capacitor, each of
which is electrically connected to an inner electrode.
11. The monolithic ceramic capacitor as claimed in claim 10, wherein the
outer electrodes comprise a sintered layer of an electroconductive metal
powder optionally containing a glass frit.
12. The monolithic ceramic capacitor as claimed in claim 11, wherein the
outer electrodes are composed of a first sintered layer of an
electroconductive metal powder optionally containing a glass frit added
thereto, and a second plated layer formed on the first layer. |
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Claims  |
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Description  |
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FIELD OF THE INVENTION
The present invention relates to monolithic ceramic capacitors to be used
in electronic equipment, especially those having inner electrodes made of
nickel or nickel alloys.
BACKGROUND OF THE INVENTION
Monolithic ceramic capacitors comprising conventional dielectric materials
that are constituted essentially of BaTiO.sub.3 were problematic in that
the materials are reduced into semiconductors if baked in neutral or
reducing atmospheres having a low oxygen partial pressure. Therefore, it
was necessary to use as inner electrodes therein, noble metals that do not
melt even at temperatures at which such dielectric ceramic materials are
sintered, and that are not oxidized even when baked in atmospheres having
a high oxygen partial pressure in which such dielectric ceramic materials
can be baked and converted into semiconductors. Accordingly, noble metals
such as palladium and platinum must be used as the inner electrodes of
monolithic ceramic capacitors, but this interferes with any attempt to
reduce the cost of the monolithic ceramic capacitors thus produced.
In order to solve the above-mentioned problems, it has been desired to use
inexpensive base metals such as nickel as the material for the inner
electrodes. However, if such base metals are used as the materials of
inner electrodes and if they are baked under the conventional conditions,
they are oxidized and lose their function as electrodes. Therefore, in
order to successfully use such base metals as inner electrodes, monolithic
ceramic capacitors having satisfactory relative resistivity and excellent
dielectric characteristics have been desired that can be baked even in
neutral or reducing atmospheres having a low oxygen partial pressure
without making the ceramic materials therein into semiconductors. As
materials that meet such requirements, proposed were compositions of the
type of BaTiO.sub.3 --CaZrO.sub.3 --MnO--MgO, such as those disclosed in
Japanese Patent Application Laid-Open No. 62-256422; compositions of the
type of BaTiO.sub.3 --MnO--MgO-rare earth oxide, such as those in Japanese
Patent Application Laid-Open No. 63-103861; and compositions of the type
of BaTiO.sub.3 --(Mg,Zn,Sr,Ca)O--Li.sub.2 O--SiO.sub.2 --MO (MO:BaO, SrO,
CaO), such as those in Japanese Patent Publication No. 61-14610.
However, in the non-reducible, dielectric ceramic compositions disclosed in
Japanese Patent Application Laid-Open No. 62-256422, CaZrO.sub.3 and also
CaTiO.sub.3 that may be formed during the baking step often give
heterogeneous phases with Mn and others, which lowers the reliability of
the capacitors at high temperatures.
In the non-reducible, dielectric ceramic compositions disclosed in Japanese
Patent Application No. 63-103861, the grain sizes of the crystals of the
essential component, BaTiO.sub.3 have a great influence on the insulating
resistance and the temperature-dependent capacity of the capacitors. Using
the compositions, therefore, it is difficult to control the grain sizes of
the crystals in order to obtain capacitors with stable characteristics.
Moreover, the insulating resistance in terms of its product with the
capacitance (product CR) of the capacitors disclosed is from 1000 to 2000
(.OMEGA..multidot.F), which is hardly within the practicable range.
The non-reducible, dielectric ceramic compositions disclosed in Japanese
Patent Publication No. 61-14610 give dielectric layers having a dielectric
constant of from 2000 to 2800, which is lower than that of from 3000 to
3500 in the conventional, dielectric ceramic compositions combined with
noble metals such as Pd. Therefore, if the compositions disclosed are
directly substituted for the conventional materials in order to reduce the
cost of the capacitors, such is disadvantageous and problematic in the
viewpoint of the desired small-sized, large-capacity capacitors.
In addition, the dielectric layers to be produced from the non-reducible,
dielectric ceramic compositions previously proposed tended to have
noticeably lowered resistance values at high temperatures, even though
having high insulating resistance at room temperature. Since this tendency
was great especially in strong electric fields, it was a great bar to the
production of thin dielectric layers. For these reasons, monolithic
ceramic capacitors having thin dielectric layers made from such
non-reducible, dielectric ceramic compositions have not heretofore been
put to practical use. In addition, the non-reducible, dielectric ceramic
compositions were defective in that their reliability in high-temperature
and high-humidity conditions (that is, the moisture-resistant load
characteristic) was lower than that of the conventional materials combined
with inner electrodes of Pd or the like.
In order to solve the above-mentioned problems, we, the present inventors
have already proposed novel, non-reducible, dielectric ceramic
compositions such as those in Japanese Patent Application Laid-Open Nos.
05-009066 to 05-009068. In today's market, however, capacitors having much
better characteristics, especially those in high-temperature and
high-humidity conditions are required. Therefore, it has become necessary
to propose dielectric ceramic compositions with much better
characteristics.
SUMMARY OF THE INVENTION
Accordingly, the object of the present invention is to provide a
small-sized, large-capacity, monolithic ceramic capacitor, which can be
produced even through baking in atmospheres having a low oxygen partial
pressure without producing semiconductors, which has a dielectric constant
of 3000 or more, which has an insulating resistance of 6000
.OMEGA..multidot.F or more in terms of its product with the capacitance
(the product CR), of which the insulating resistance is lowered at most
slightly even in strong electric fields, which has good reliability and
has a high rated voltage even when the dielectric layers thereof are
thinned, which has temperature-dependent capacitance that satisfies the
B-level characteristic standard stipulated in the JIS Standard and the
X7R-level characteristic standard stipulated in the EIA Standard, and
which has excellent weather resistance even under a load of high
temperature and/or a load of high humidity.
Specifically, the present invention provides a monolithic ceramic capacitor
composed of a plurality of dielectric ceramic layers, a plurality of inner
electrodes formed between the dielectric ceramic layers in such a manner
that one end of each inner electrode is exposed out of a end of the
dielectric ceramic layers, preferably alternating ends, and outer
electrodes electrically connected with the exposed inner electrodes, which
is characterized in that
the dielectric ceramic layers each are made of a material comprising barium
titanate having a content of alkali metal oxide impurities of about 0.02%
by weight or less, and also yttrium oxide, gadolinium oxide, terbium
oxide, dysprosium oxide, manganese oxide, cobalt oxide and nickel oxide,
and containing a side component, magnesium oxide in an amount of from
about 0.5 to 5.0 mols, in terms of MgO, relative to 100 mols of an
essential component having the following compositional formula:
(1-.alpha.-.beta.) {BaO}.sub.m .multidot.TiO.sub.2 +.alpha.{(1-x)M.sub.2
O.sub.3 +xRe.sub.2 O.sub.3 }+.beta.(Mn.sub.1-y-z Ni.sub.y Co.sub.z)O
where
Re.sub.2 O.sub.3 is one or more selected from Gd.sub.2 O.sub.3, Tb.sub.2
O.sub.3 and Dy.sub.2 O.sub.3 ;
M.sub.2 O.sub.3 is one or more selected from Y.sub.2 O.sub.3 and Sc.sub.2
O.sub.3 ; and
.alpha., .beta., m, x, y and z are as follows:
0.0025.ltoreq..alpha..ltoreq.0.025
0.0025.ltoreq..beta..ltoreq.0.05
.beta./.alpha..ltoreq.4
0<x.ltoreq.0.50
0.ltoreq.y<1.0
0.ltoreq.z<1.0
0.ltoreq.y+z<1.0
1.000<m.ltoreq.1.035,
and further containing from 0.2 to 3.0 parts by weight, relative to 100
parts by weight of said components, of an oxide of the type of Li.sub.2
O--(Si,Ti)O.sub.2 --Al.sub.2 O.sub.3 --ZrO.sub.2 ; and
the inner electrodes are made of nickel or a nickel alloy.
Preferably, the Li.sub.2 O--(Si,Ti)O.sub.2 --Al.sub.2 O.sub.3 --ZrO.sub.2
oxide falls within a compositional range as surrounded by six lines formed
by connecting six points representing the mol % of:
A (20, 80, 0)
B (10, 80, 10)
C (10, 70, 20)
D (35, 45, 20)
E (45, 45, 10)
F (45, 55, 0)
in a triangular diagram of {Li.sub.2 O, (Si.sub.w Ti.sub.1-w)O.sub.2, M},
in which 0.30.ltoreq.w.ltoreq.1.0, and M is at least one selected from
Al.sub.2 O.sub.3 and ZrO.sub.2, and provided that w<1.0 for the
composition on the line A-F.
Preferably, the impurities are less than about 0.015%,
0.004.ltoreq..alpha..ltoreq.0.02, 0.009.ltoreq..beta..ltoreq.0.04,
.beta./.alpha..ltoreq.2, x is abut 0.1-0.4, y is about 0.1-0.8, z is about
0.3-0.8, y+z is about 0.3-0.8, m is about 1.01-1.035,
0.4.ltoreq.w.ltoreq.0.9, said Li.sub.2 O--(Si,Ti)O.sub.2 --Al.sub.2
O.sub.3 --ZrO.sub.2 oxide is about 0.8-2 parts, and the grain size is less
that about 1 micron and most preferable less than about 0.075 micron.
Also preferably, the outer electrodes each are made of a sintered layer of
an electroconductive metal powder or of an electroconductive metal powder
with glass frit added thereto. Still preferably, the outer electrodes each
are composed of a first, sintered layer of an electroconductive metal
powder or of an electroconductive metal powder with glass frit added
thereto, and a second, plated layer formed on the first layer.
The monolithic ceramic capacitor of the present invention is advantageous
in that it can be produced even through baking in neutral or reducing
atmospheres at temperatures falling between 1260.degree. C. and
1300.degree. C., and has an insulating resistance of 6000
.OMEGA..multidot.F or more in terms of its product with the capacitance
(the product CR), that its insulating resistance is lowered little even in
strong electric fields, that it has good reliability and has a high rated
voltage even when its dielectric layers are thinned, that it has a high
dielectric constant of 3000 or more, that it has temperature-dependent
capacitance which satisfies the B-level characteristic standard stipulated
in the JIS Standard and the X7R-level characteristic standard stipulated
in the EIA Standard, and that its characteristics are not worsened even in
high-temperature and high-humidity conditions
Accordingly, the monolithic ceramic capacitor of the present invention can
have inner electrodes of nickel or an nickel alloy. Therefore, according
to the present invention, it is possible to significantly reduce the cost
of the monolithic ceramic capacitors of the invention without worsening
all their characteristics including the weather resistance such as
high-temperature load resistance and high-humidity load resistance, as
compared with the conventional, monolithic ceramic capacitors comprising
noble metals such as Pd.
The above-mentioned object and the other objects of the present invention,
and also the characteristics and the advantages thereof will be clarified
further more in the detailed description of the preferred modes of
carrying out the invention and the examples of the invention, which is
made hereinunder with reference to the drawings attached hereto.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross-sectional view illustrating one embodiment of the present
invention.
FIG. 2 is a plan View illustrating one embodiment of the first dielectric
ceramic layer to be laminated.
FIG. 3 is a perspective, exploded view illustrating the lamination of first
dielectric ceramic layers and second dielectric ceramic layers to
construct the monolithic dielectric ceramic body to be in the capacitor of
the invention.
FIG. 4 is a three-component compositional graph for {Li.sub.2 O, (Si.sub.w
Ti.sub.1-w)O.sub.2, M} where M is at least one selected from Al.sub.2
O.sub.3 and ZrO.sub.2, which indicates the compositional range of the
oxide additive Li.sub.2 O--(Si,Ti)O.sub.2 --Al.sub.2 O.sub.3 --ZrO.sub.2.
PREFERRED MODES OF CARRYING OUT THE INVENTION
FIG. 1 is a cross-sectional view showing one embodiment of the present
invention. The monolithic ceramic capacitor 10 illustrated comprises a
monolithic dielectric ceramic body 12. The monolithic dielectric ceramic
body 12 is formed by integrally laminating a plurality of first dielectric
ceramic layers 14a and two second dielectric ceramic layers 14b. In the
monolithic dielectric ceramic body 12, the dielectric ceramic layers 14a
and 14b are integrally laminated in such a manner that the two dielectric
ceramic layers 14b are disposed at the both sides, while sandwiching
therebetween a plurality of the first dielectric ceramic layers 14a. These
dielectric ceramic layers 14a and 14b are laminated along with inner
electrodes 16 alternately embedded therein. On each of both sides of the
monolithic dielectric ceramic body 12, formed are an outer electrode 18, a
first plate film 20a and a second plate film 20b in that order. The first
plate film 20a may be made of nickel or copper, and the second plate film
20b may be made of solder or tin. Accordingly, the monolithic ceramic
capacitor 10 is shaped in the form of a rectangular parallelepiped chip.
Now, a method for producing the monolithic ceramic capacitor 10 of the
invention is described below in the order of the steps constituting the
method.
First, the monolithic dielectric ceramic body 12 is produced as follows. As
in FIG. 2, a raw material powder comprising barium titanate, yttrium
oxide, gadolinium oxide, terbium oxide, dysprosium oxide, manganese oxide,
cobalt oxide, nickel oxide, magnesium oxide, and an oxide glass consisting
essentially of Li.sub.2 O--(TiO.sub.2,SiO.sub.2)--Al.sub.2 O.sub.3 is
formed into a slurry, and then sheeted to prepare a first, dielectric
ceramic layer 14a (green sheet). On one surface of the green sheet, formed
is an internal electrode 16 of nickel or a nickel alloy. To form the
internal electrode 16, employable is any method of screen printing, metal
vapor deposition or plating. A predetermined number of the first
dielectric ceramic layers 14a each with the inner electrode 16 formed
thereon are laminated together, and then sandwiched between two dielectric
ceramic layers 14b with no inner electrode 16, as in FIG. 3, and these are
integrated under pressure to give a monolithic laminate. Next, the
resulting laminate is baked in a reducing atmosphere at a predetermined
temperature to obtain a monolithic dielectric ceramic body 12.
Next, on both sides of the monolithic dielectric ceramic body 12, formed
are two outer electrodes 18 that are connected with the inner electrodes
16. The material of the outer electrodes 18 may be the same as that of the
inner electrodes 16. Apart from this, silver, palladium, silver-palladium
alloys and others can be used as the material of the outer electrodes 18.
In consideration of the use of the monolithic ceramic capacitor 10 and the
site at which the capacitor 10 is used, suitable materials are selected
for the outer electrodes 18. The outer electrodes 18 can be formed by
applying a paste material of metal powder onto the baked, monolithic
dielectric ceramic body 12 followed by baking. Alternatively, the paste
material can be applied onto the non-baked body 12, and the composite is
thereafter baked. After this, the outer electrodes 18 may be plated with
nickel, copper or the like to form a first plate film 20a thereon. Last,
the first plate film 20a is coated with a second plate film 20b of solder,
tin or the like. Thus is produced the chip-type, monolithic ceramic
capacitor 10 of the invention.
EMBODIMENTS OF THE INVENTION
Example 1
First, raw materials of TiCl.sub.4 and Ba(NO.sub.3).sub.2 having various
degrees of purity were prepared and weighed. These were treated with
oxalic acid to obtain a precipitate of barium titanyl oxalate
(BaTiO(C.sub.2 O.sub.4).4H.sub.2 O). This precipitate was decomposed under
heat of 1000.degree. C. or higher to obtain the four types of barium
titanate (BaTiO.sub.3) shown in Table 1. On the other hand, oxides,
carbonates and hydroxides of the constitutive components were weighed to
give a composition of 0.25Li.sub.2
O--0.65(0.30TiO.sub.2.0.70SiO.sub.2)--0.10Al.sub.2 O.sub.3 (by mol), then
mixed, ground, and vaporized to dryness to obtain a powder. This powder
was melted under heat at 1300.degree. C. in an alumina crucible, and then
rapidly cooled to obtain a oxide glass having a mean grain size of 1 .mu.m
or less.
TABLE 1
______________________________________
Content of Impurities (wt. %)
Mean
Type Alkali Grain
of Metal Size
BaTiO.sup.3
Oxides SrO CaO SiO.sup.2
Al.sub.2 O.sub.3
(.mu.m)
______________________________________
A 0.003 0.012 0.001 0.010 0.005 0.60
B 0.020 0.010 0.003 0.019 0.008 0.56
C 0.012 0.179 0.018 0.155 0.071 0.72
D 0.062 0.014 0.001 0.019 0.004 0.58
______________________________________
Next, prepared were BaCO.sub.3, which is to adjust the molar ratio, m, of
Ba/Ti in the barium titanate, and Sc.sub.2 O.sub.3, Y.sub.2 O.sub.3,
Gd.sub.2 O.sub.3, Tb.sub.2 O.sub.3, Dy.sub.2 O.sub.3, MnCO.sub.3, NiO,
Co.sub.2 O.sub.3 and MgO each having a purity of 99% or more. Powders of
these raw materials were mixed with the oxide glass at various
compositional ratios as shown in Table 2 to prepare various compositions.
Each composition was wet-milled in a ball mill along with a polyvinyl
butyral binder and an organic solvent such as ethanol to obtain a ceramic
slurry. This ceramic slurry was sheeted according to the doctor blade
method to obtain a rectangular, ceramic green sheet having a thickness of
14 .mu.m. Next, an electroconductive paste consisting essentially of Ni
was printed on this ceramic green sheet to form an electroconductive paste
layer thereon in the form of an inner electrode.
TABLE 2
__________________________________________________________________________
Amount of
(1-.alpha.-.beta.) (BaO).sub.m TiO.sub.2 + .alpha. {(1 - x)M.sub.2
O.sub.3 + xRe.sub.2 O.sub.3 } + .beta.(Mn.sub.l-x-z Ni.sub.y CO.sub.2)O
Oxide Glass
Sample
Type of M Re Added
No. BaTiO.sub.2
.sigma.
Sc Y 1 - x
Gd Tb Dy x .beta.
.beta./.alpha.
y z y + z
m MgO (wt.
__________________________________________________________________________
pts.)
*1 A 0.0000
-- -- -- -- -- -- -- 0.0200
-- 0.20
0.20
0.40
1.010
1.00
0.80
*2 A 0.0100
-- 0.60
0.60
-- 0.40
-- 0.40
0.0000
0 -- -- -- 1.010
1.00
0.50
*3 A 0.0150
-- 1.00
1.00
-- -- -- 0.00
0.0450
3 0.20
0.20
0.40
1.010
1.00
0.50
*4 A 0.0100
0.20
0.60
0.80
-- -- 0.20
0.20
0.0200
2 0.30
0.20
0.50
0.990
1.00
0.50
*5 A 0.0200
0.20
0.70
0.90
-- 0.10
-- 0.10
0.0200
1 0.30
0.30
0.60
1.000
1.50
0.80
*6 A 0.0100
-- 0.70
0.70
-- -- 0.30
0.30
0.0300
3 0.20
0.20
0.40
1.010
0.30
0.80
*7 A 0.0100
-- 0.80
0.80
-- -- 0.20
0.20
0.0100
1 0.10
0.30
0.40
1.010
1.00
0.00
8 A 0.0025
-- 0.80
0.80
-- -- 0.20
0.20
0.0025
1 0.20
0.50
0.70
1.010
1.5 0.20
9 A 0.0250
0.20
0.70
0.90
-- -- 0.10
0.10
0.0500
2 0.20
0.20
0.40
1.005
0.60
0.80
10 A 0.0060
-- 0.70
0.70
-- 0.30
-- 0.30
0.0240
4 0.30
0.20
0.50
1.015
1.50
1.00
11 A 0.0100
-- 0.50
0.50
-- 0.50
-- 0.50
0.0025
0.25
0.10
0.50
0.60
1.005
2.50
0.50
12 A 0.0060
0.60
-- 0.60
0.40
-- -- 0.40
0.0090
1.5
0.80
0.00
0.80
1.010
1.50
1.20
13 B 0.0100
-- 0.90
0.90
0.10
-- -- 0.10
0.0200
2 0.00
0.80
0.80
1.010
1.20
0.80
14 A 0.0040
-- 0.80
0.80
0.10
-- 0.10
0.20
0.0080
2 0.20
0.10
0.30
1.010
5.00
1.00
15 C 0.0150
-- 0.70
0.70
-- 0.20
0.10
0.30
0.0300
2 0.00
0.00
0.00
1.035
0.50
1.00
16 A 0.0200
-- 0.70
0.70
0.10
0.10
0.10
0.30
0.0400
2 0.30
0.00
0.30
1.035
1.50
3.00
*17 A 0.0300
-- 0.80
0.80
-- -- 0.20
0.20
0.0300
1 0.20
0.10
0.30
1.020
2.00
1.50
*18 A 0.0200
-- 0.70
0.70
-- -- 0.30
0.30
0.0700
3.5
0.10
0.20
0.30
1.010
1.00
1.00
*19 A 0.0100
0.20
0.60
0.80
-- 0.20
-- 0.20
0.0500
5 0.30
0.10
0.40
1.010
1.00
0.80
*20 A 0.0200
-- 0.30
0.30
0.70
-- -- 0.70
0.0400
2 0.20
0.10
0.30
1.010
1.00
0.80
*21 A 0.0100
-- 0.80
0.80
-- -- 0.20
0.20
0.0100
1 1.00
0.00
1.00
1.010
1.20
0.80
*22 A 0.0050
-- 0.70
0.70
-- -- 0.30
0.30
0.0100
2 0.00
1.00
1.00
1.020
1.00
0.80
*23 A 0.0050
0.20
0.60
0.80
0.20
-- -- 0.20
0.0100
2 0.50
0.50
1.00
1.030
1.00
0.80
*24 A 0.0050
-- 0.70
0.70
0.30
-- -- 0.30
0.0100
2 0.10
0.10
0.20
1.050
1.00
0.80
*25 A 0.0050
0.2
0.70
0.90
-- -- 0.10
0.10
0.0100
2 0.10
0.10
0.20
1.010
7.00
0.80
*26 A 0.0160
-- 0.70
0.70
-- -- 0.30
0.30
0.0040
0.25
0.20
0.20
0.40
0.010
1.00
5.00
*27 D 0.0100
-- 0.60
0.60
-- -- 0.40
0.40
0.0300
3 0.30
0.10
0.40
1.015
1.50
1.00
__________________________________________________________________________
A plurality of these ceramic green sheets each having the electroconductive
paste layer formed thereon were laminated in such a manner that the side
of one sheet with the electroconductive paste exposed out of it was
alternated with that of another sheet with the electroconductive paste not
exposed out of it. Thus was obtained a laminate. This laminate was heated
in an N.sub.2 atmosphere at 350.degree. C. whereby the binder was burnt
out, and then baked for 2 hours in a reducing atmosphere comprising gases
of H.sub.2, N.sub.2 and H.sub.2 O and having an oxygen partial pressure of
from 10.sup.-12 to 10.sup.-9 MPa, at various temperatures shown in Table
3, to obtain sintered ceramic bodies. A silver paste was applied onto the
both sides of each sintered ceramic body, and baked in an N.sub.2
atmosphere at 600.degree. C. to thereby form outer electrodes as
electrically connected with the inner electrodes.
TABLE 3
__________________________________________________________________________
Temperature- Number of
Baking Dependent Variation
Temperature-Dependent
Product CR
Product CR
Mean
Failures
Tem-
Dielectric
Dielectric
in Capacitance
Variation in Capacitance
(25.degree. C.)
(125.degree. C.)
Life
in high-
Sample
perature
Constant
Loss .DELTA.C/C.sub.20 %
.DELTA.C/C.sub.25 %
(.OMEGA. .multidot. F)
(.OMEGA. .multidot.
Time
humidity
No. ›.degree.C.!
.epsilon.
tan .delta. %
-25.degree. C.
85.degree. C.
-55.degree. C.
125.degree. C.
max
16 V
160 V
16 V
160 V
(hr.)
Load
__________________________________________________________________________
Test
*1 1280
2830 3.1 -4.8
18.0 -10.6
13.2
25.3
6100
2030
2140
510 52 0/72
*2 1300
As Semiconductors were formed, the measurement was impossible
*3 1280
3360 2.0 0.1 -7.5 -0.4
-8.9
8.9
6980
2970
2740
710 352 0/72
*4 1280
As Semiconductors were formed, the measurement was impossible
*5 1280
3280 2.2 -0.1
9.5 -0.5
-10.5
10.5
4500
690
1520
350 229 0/72
*6 1280
3510 2.3 1.4 -14.6
1.1 -17.9
19.3
4100
1510
1480
390 235 0/72
*7 1350
As the sample was sintered insufficiently, the measurement was
impossible
8 1280
3310 2.0 0.3 -10.0
-0.5
-11.2
12.0
7250
2900
2540
660 575 0/72
9 1280
3180 1.8 0.3 -8.3 -0.5
-9.5
9.6
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