A method for on-chip polishing pad conditioning in a chemical mechanical polishing process is disclosed. In the method, a plurality of dummy patterns in a designated area on a wafer surface are planted during the same photolithographic method for forming the IC dies. The designated area may be the edge portion, i.e., the blanket area along the edges of a wafer, or the scribe lines formed on the wafer. The dummy patterns should be formed to a step height of at least 2,000 .ANG., and preferably to at least 4,000 .ANG.. The present invention plurality of dummy patterns is used during a polishing process for the top surface of a semiconductor wafer by a polishing pad. The plurality of dummy patterns simultaneously conditions the pad in a localized manner to improve the removal rate of the pad. The shape of the dummy patterns can be formed in any desirable shape, including those that have a cross-section of a square or a rectangle with a width of at least 100 .ANG..

A tool for cutting tissue comprising a body, a handle lever, a drive rod, and a cutter beam. The drive rod constructed and arranged for longitudinal movement through the body. The handle lever being operatively engaged to the drive rod, such that when the handle lever is moved between a first position and a second position the drive rod is moved between an advanced position and a retracted position. The drive rod extending from a proximal end of the body to a distal end. The cutter beam being pivotally engaged to the distal end of the body. The cutter beam being pivotally moveable between a non-actuated position and an actuated position. A lower pivot member pivotally connects the distal end of the body and the cutter beam. The cutter beam being further pivotally engaged to a distal end of the drive rod.

A chemical-mechanical polishing pad conditioning system and method. The system includes a conditioning device that may be used to condition a polishing pad. The system may also include a first conduit for introducing a chemical reagent onto the polishing pad, a second and third conduit for introducing the chemical reagent and a rinsing fluid respectively onto a conditioning surface of the.conditioning device or a storage apparatus of the conditioning device. The method includes introducing the chemical reagent onto the polishing pad during the pad conditioning process. The chemical reagent may further be introduced onto the storage apparatus or be introduced onto the conditioning surface of the conditioning device. The rinsing fluid may be introduced onto the polishing pad, the storage apparatus, or the conditioning surface.