A chemical vapor deposition (CVD) apparatus for depositing a low vapor pressure copper precursor onto a silicon wafer. The CVD apparatus includes a CVD reaction chamber with an interior containing a substrate holder adapted to support a substrate, such as a silicon wafer, at a predetermined position within the CVD reaction chamber. An ultrasonic nebulizer is operatively connected to the CVD reaction chamber and is adapted to connect to a source of liquid precursor. The ultrasonic nebulizer has an atomizing discharge end adapted to atomize the liquid precursor and deposit the atomized precursor onto a substrate supported by the substrate holder. A gas distribution ring is disposed within the interior of the CVD reaction chamber for discharging a directionally oriented gas into the atomized precursor to direct the atomized precursor toward the substrate. Additional embodiments and methods for depositing the precursor are described.

The invention relates to a process and a device for producing a gas mixture which contains at least one gaseous trace component, in particular for producing a calibration gas, in which a matrix gas stream is conveyed continuously with a predetermined quantitative flow, and at least one calibration component is introduced into the matrix gas stream in a predetermined quantity per unit volume of matrix gas, the at least one calibration component being introduced in the form of microdroplets of substantially identical size and being evaporated in the matrix gas to form the calibrating gas mixture, the microdroplets being delivered by nozzles which are in each case made to contract by means of a piezoelement which is triggered by metering pulses which are generated according to the intended delivery quantity.