Thick opaque ceramic coatings are used to protect delicate microelectronic devices against excited energy sources, radiation, light, abrasion, and wet etching techniques. The thick opaque ceramic coating are prepared from a mixture containing phosphoric anhydride, i.e., phosphorous pentoxide (P.sub.2 O.sub.5), and a pre-ceramic silicon-containing material. It is preferred to also include tungsten carbide (WC) and tungsten metal (W) in the coating mixture. The coating is pyrolyzed to form a ceramic SiO.sub.2 containing coating. A second coating of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC), diamond, or silicon nitride (Si.sub.3 N.sub.4), can be applied over the thick opaque ceramic coating to provide hermeticity. These coatings are useful on patterned wafers, electronic devices, and electronic substrates. The thick opaque ceramic coating is unique because it is resistant to etching using wet chemicals, i.e., acids such as H.sub.3 PO.sub.4 and H.sub.2 SO.sub.4, or bases.
An objective of the present invention is to provide a phosphorous-containing siliceous material having a specific permittivity of not more than 3.5. The phosphorus-containing silazane composition according to the present invention is characterized by comprising a polyalkylsilazane and at least one phosphorus compound in an organic solvent. A phosphorus-containing siliceous film may be formed by coating the composition onto a substrate to form a film which is then prebaked at a temperature of 50 to 300.degree. C. and is then baked in an inert atmosphere at a temperature of 300 to 700.degree. C. The phosphorus compound according to the present invention is preferably a pentavalent phosphoric ester or phosphazene compound.
A plurality of lines are formed on the principal face of a substrate. An insulating film is formed on the principal surface of this substrate so as to cover the lines. This insulating film consists of a material which contains a low-dielectric constant composition having caged molecular structural units. Spaces of thin electron clouds delineate the centers of the caged molecular structural units. The dielectric constant is accordingly lower than that of denser materials.
Hermetic amorphous doped silicon carbide is deposited on an integrated circuit substrate in a PECVD reactor. Nitrogen-doping of an SiC film is conducted by flowing nitrogen-containing molecules, preferably nitrogen or ammonia gas, into the reactor chamber together with an organosilane, preferably tetramethylsilane, and forming a plasma. Oxygen-doping is conducted by flowing oxygen-containing molecules into the reaction chamber.
The invention relates to a method for constructing a layer structure on an especially fragile flat substrate. In order for thin, fragile flat substrates to be able to be subjected to refinement or construction of semiconductor components, a process is proposed with the steps: Applying an inorganic ceramic phase to the fragile substrate and subsequent heat treatment for hardening and sintering the inorganic ceramic material.
The purpose of the invention is a coating precursor comprising a silicone resin and a mineral filler capable of chemically reacting so as to produce a solid layer on a substrate and a cohesive refractory layer after a calcination operation. The precursor may also include an additive capable of reducing its viscosity. Another purpose of the invention is a method for coating a given surface of a substrate with at least one refractory layer containing silicon in which the substrate is coated with a coating precursor according to the invention so as to form a green layer and a heat treatment is carried out to calcine the said green layer and to form a cohesive refractory layer. The invention is a means of obtaining a protective coating capable of resisting oxidising environments, liquid metal and a solid or molten salt.
