Metal alkoxycarboxylate-based liquid precursor solutions are used to form electronic devices (100) that include mixed layered superlattice materials (112) of a type having discrete oxygen octahedral layers (124) and (128) collated with a superlattice-generator layer (116). The precursor solutions include a plurality of metal moieties in effective amounts for yielding the layered superlattice materials. These metal moieties are mixed to include an A/B portion capable of forming an A/B layer (124), a perovskite-like AB layer portion capable of forming a perovskite-like AB octahedral layer (128), and a superlattice-generator portion capable of forming the superlattice-generator layer (116). The precursors are deposited in liquid form upon a substrate and annealed to provide the layered superlattice materials.
This application is a division of U.S. application Ser. No. 08/406,374 filed 17 Mar. 1995, which is a continuation in part of U.S. application Ser. No. 07/965,190, filed 23 Oct. 1992.
In a method for producing ferroelectric strontium bismuth tantalate having the composition Sr.sub.x Bi.sub.y Ta.sub.2 O.sub.9 (SBT) or Sr.sub.x Bi.sub.y (Ta, Nb).sub.2 O.sub.9 (SBTN), the element strontium, which is normally present in an amount y=2, is provided in excess in a range from 2.1.ltoreq.y.ltoreq.3.0. This makes it possible to carry out the heat treatment step for converting the deposited material into the ferroelectric phase at a temperature T.sub.1, which is lower than 700.degree. C. In addition, the strontium content x can be reduced from a nominal value of 1 to 0.7.
A white pozzolan derived from by-products of manufacturing vitreous low alkali, low iron glass fibers, and to the method for producing the white pozzolan. The invention relates as well to cement compositions based on the white pozzolan, such as white and pigmented blended pozzolanic cements of high durability for use in applications such as white or colored architectural concrete, building materials, and manufactured cementitious products. The white pozzolan also functions as a high performance pozzolan with grey cement.
A liquid precursor for forming a layered superlattice material is applied to an integrated circuit substrate. The precursor coating is annealed in oxygen using a rapid ramping anneal ("RRA") technique with a ramping rate of 50.degree. C./second at a hold temperature of 650.degree. C. for a holding time of 30 minutes.
A coating of liquid precursor for forming a layered superlattice material is applied to a substrate, the substrate is dried and then pretreated using RTP at 450 .degree. C. for 5 minutes. Following the RTP, the substrate is annealed in an unreactive gas at a temperature not exceeding 800.degree. C. then annealed in oxygen gas at a temperature not exceeding 800.degree. C. for one hour to form a thin film of layered superlattice material.
A thin film of precursor for forming a layered superlattice material is applied to an integrated circuit substrate, then a strong oxidizing agent is applied at low temperature in a range of from 100.degree. C. to 300.degree. C. to the precursor thin film, thereby forming a metal oxide thin film. The strong oxidizing agent may be liquid or gaseous. An example of a liquid strong oxidizing agent is hydrogen peroxide. An example of a gaseous strong oxidizing agent is ozone. The metal oxide thin film is crystallized by annealing at elevated temperature in a range of from 500.degree. C. to 700.degree. C., preferably not exceeding 650.degree. C., for a time period in a range of from 30 minutes to two hours. Annealing is conducted in an oxygen-containing atmosphere, preferably including water vapor. Treatment by ultraviolet (UV) radiation may precede annealing. RTP in a range of from 500.degree. C. to 700.degree. C. may precede annealing.
