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Magnetoresistance effect element and magnetic field detection device
   
Document Number
US Patent 5828526
Issued Date
October 27, 1998
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Abstract
A magnetoresistance effect element is provided with a magnetoresistance effect film (MR film) formed of alternative laminations of magnetic layers (for example, soft magnetic layers such as Fe--Ni--Co alloy layers) which are coupled anti-ferromagnetically with each other between adjacent magnetic layers and non-magnetic layers (for example, non-magnetic layers such as Cu layers) and provided with a bias soft magnetic layer (for example, SAL layer) for application of a bias magnetic filed to the magnetoresistance effect film, where the anisotropic magnetic field (Hk) in the plane of the bias medium layer is 5 Oe.ltoreq.Hk.ltoreq.15 Oe.
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Magnetoresistance effect element and magnetic field detection device - US Patent 5828526 Drawing
Drawing from US Patent 5828526
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Number of Claims:
5
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Owner
Sony Corporation (Tokyo,JP)
Published
October 27, 1998
Application Number
08/690,756
Filed
August 1, 1996
US Classification
360/324   257/E43.005 324/252 338/32R 428/811.3 428/900
Int'l Classification
H01L   43/00   (20060101)   H01L   43/10   (20060101)   G11B   5/39   (20060101)  
Examiner
Attorney/Law Firm
Priority Data
Aug 03, 1995 [JP] 7-218051
USPTO Field of Search
360/113   324/252   324/207.21   338/32R   338/32H   365/8   365/157   365/158   428/332   428/336   428/611   428/692   428/694T   428/694TM   428/694BA   428/694BM   428/900  
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