An apparatus for contacting large volumes of gas and liquid together on a microscope scale for mass transfer or transport processes wherein the contact between liquid and gas occurs at the interfaces of a multitude of gas bubbles. Multiple porous tubes assembled in a bundle inside a pressure vessel terminate at each end in a tube sheet. A thin film helical liquid flow is introduced into the inside of each porous tube around and along its inside wall. Gas is sparged into the porous media and the liquid film so that an annular two phase flow with a uniform distribution of tiny gas bubbles results. The gas flow is segregated from the liquid flow without first passing through the porous media and through the liquid film. Nozzles at the lower end of the tubes divert liquid flow to a vessel and redirect the gas flow in a countercurrent direction.

A method for contacting large volumes of gas and liquid together on a microscopic scale for mass transfer or transport processes wherein the contact between liquid and gas occurs at the interfaces of a multitude of gas bubbles. Multiple porous tubes assembled in a bundle inside a pressure vessel terminate at each end in a tube sheet. A thin film helical liquid flow is introduced into the inside of each porous tube around and along its inside wall. Gas is sparged into the porous media and the liquid film so that an annular two phase flow with a uniform distribution of tiny gas bubbles results. The gas flow is segregated from the liquid flow without first passing through the porous media and through the liquid film. Nozzles at the lower end of the tubes divert liquid flow to a vessel and redirect the gas flow in a countercurrent direction.

The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced to a second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.

The present invention relates to systems and methods for controlled combustion of gaseous pollutants while reducing and removing deposition of unwanted reaction products from within the treatment systems. The systems employ a two-stage thermal reactor having an upper thermal reactor including at least one inlet for mixing a gaseous waste stream with oxidants and combustible fuels for thermal combustion within the upper thermal reactor. The upper thermal reactor further includes a double wall structure having an outer exterior wall and an interior porous wall that defines an interior space for holding a fluid and ejecting same, in a pulsating mode, through the interior porous wall into the upper thermal reactor to reduce deposition of the reaction products on the interior of the upper reactor chamber. The two-stage thermal reactor further includes a lower reactor chamber for flowing reaction products formed in the upper thermal reactor through a water vortex that provides a water overflow along the interior of the lower reactor chamber thereby reducing deposition of unwanted products on the interior surface of the lower reactor.

One aspect of the invention is directed toward a method of forming a conductive layer on a microfeature workpiece. In one embodiment, the method comprises placing a microfeature workpiece in a vapor reaction chamber, depositing an electrically conductive material onto the microfeature workpiece in a vapor deposition process by flowing a gas into a plasma zone of the vapor deposition chamber and transmitting energy into the plasma zone via a transmitting window. The energy transmitted through the window and into the plasma zone produces plasma from the gas. The plasma produced from the gas forms a conductive layer on the workpiece and a residual film on the window. This embodiment of the method further includes changing the residual film on the window to have a reduced transmissivity to the energy.