Metal alkoxycarboxylate-based liquid precursor solutions are used to form electronic devices (100) that include mixed layered superlattice materials of a type having discrete oxygen octahedral layers and collated with a superlattice-generator layer. The precursor solutions include a plurality of metal moieties in effective amounts for yielding the layered superlattice materials. These metal moieties are mixed to include an A/B portion capable of forming an A/B layer, a perovskite-like AB layer portion capable of forming a perovskite-like AB octahedral layer, and a superlattice-generator portion capable of forming the superlattice-generator layer. The precursors are deposited in liquid form upon a substrate and annealed to provide the layered superlattice materials.
RELATED APPLICATIONS
This application is a division of U.S. application Ser. No. 08/406,374 filed 17 Mar. 1995, which is a continuation in part of U.S. application Ser. No. 07/965,190, filed 23 Oct. 1992 (now abandoned).
A microelectronic device is designed such that it includes a region between electrodes having a switchable ohmic resistance wherein the region is made of a substance comprising components A.sub.x, B.sub.y, and oxygen O.sub.z. The ohmic resistance in the region is reversibly switchable between different states by applying different voltage pulses. The different voltage pulses lead to the respective different states. An appropriate amount of dopant(s) in the substance improves the switching, whereby the microelectronic device becomes controllable and reliable.
An integrated circuit includes a layered superlattice material having the formula A1.sub.w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+sk B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-q, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . B1 represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in ferroelectric FETs in non-volatile memories. Others are high dielectric constant materials that do not degrade or break down over long periods of use and are applied as the gate insulator in volatile memories.
