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| United States Patent | 5956289 |
| Link to this page | http://www.wikipatents.com/5956289.html |
| Inventor(s) | Norman; Robert D. (San Jose, CA);
Chevallier; Christophe J. (Palo Alto, CA) |
| Abstract | An integrated circuit is described which has circuitry to detect
environmental conditions such as temperature and supply voltage and adjust
the operation of the circuit accordingly. A flash memory system is
described which includes a temperature detector and a supply voltage
detector. The memory monitors temperature and voltage and adjusts an
oscillator circuit to maintain an ideal operating frequency. The
oscillator includes adjustable delay stages which can be selectively fed
back to adjust operating frequency. To save power, unused delay stages of
the oscillator can be disabled. Oscillator calibration circuitry, a
temperature detector, and a voltage detector are described. |
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Title Information  |
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Drawing from US Patent 5956289 |
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Clock signal from an adjustable oscillator for an integrated circuit |
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| Publication Date |
September 21, 1999 |
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| Filing Date |
June 17, 1997 |
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Title Information  |
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References  |
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U.S. References |
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| | Reference | Relevancy | Comments | Reference | Relevancy | Comments | 5784328 Irrinki
Jul,1998 |      Your vote accepted [0 after 0 votes] | | 5680359 Jeong 708/620 Oct,1997 |      Your vote accepted [0 after 0 votes] | | 5615151 Furuno 365/185.18 Mar,1997 |      Your vote accepted [0 after 0 votes] | | 5610869 Yoo 365/222 Mar,1997 |      Your vote accepted [0 after 0 votes] | | 5596534 Manning 365/189.09 Jan,1997 |      Your vote accepted [0 after 0 votes] | | 5594360 Wojciechowski 324/771 Jan,1997 |      Your vote accepted [0 after 0 votes] | | 5581206 Chevallier 327/143 Dec,1996 |      Your vote accepted [0 after 0 votes] | | 5451892 Bailey
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| Market Size |
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| Reasonable Royalty |
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Market Review  |
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Technical Review  |
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Claims  |
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What is claimed is:
1. An integrated circuit comprising:
an adjustable oscillator circuit for producing a clock signal that controls
multiple functions of the integrated circuit;
multiple sensors for detecting multiple dynamic parameters of the
integrated circuit;
a lookup table containing data representing a fast operable clock frequency
for each combination of the multiple dynamic parameters of the flash
memory circuit; and
control circuitry for adjusting the adjustable oscillator circuit to
produce the clock signal at the faste operable frequency based on the data
loaded from the lookup table.
2. The integrated circuit of claim 1 further comprising:
an internal detection circuit for measuring a dynamic parameter or
parameters and outputting a multiple bit output signal.
3. The integrated circuit of claim 2 wherein at least one of the dynamic
parameters is a temperature of the integrated circuit.
4. The integrated circuit of claim 2 wherein at least one of the dynamic
parameters is a supply voltage level of the integrated circuit.
5. The integrated circuit of claim 2 wherein the lookup table further
comprises:
a data register containing data corresponding to possible states of the
multiple bit output signal, the control circuitry adjusts the frequency of
the clock signal based upon data retrieved from the data register.
6. The integrated circuit of claim 5 wherein the data in the data register
is changed in response to a detected error in operation of the integrated
circuit.
7. The integrated circuit of claim 1 wherein the adjustable oscillator
circuit comprises:
a ring oscillator having a plurality of cascaded delay stages; and
controllable feedback circuitry for selectively coupling an output of one
of the cascaded delay stages to an input of the ring oscillator.
8. The integrated circuit of claim 7 wherein the adjustable oscillator
further comprises:
calibration circuitry for calibrating the ring oscillator to a nominal
clock signal frequency.
9. The integrated circuit of claim 8 wherein the calibration circuitry
comprises:
a counter coupled to the ring oscillator for counting transitions of the
clock signal; and
a calibrate input coupled to the counter for receiving a calibrate pulse
signal having a predetermined duration.
10. The integrated circuit of claim 7 wherein the adjustable oscillator
further comprises:
de-couple circuitry connected to the ring oscillator for disabling unused
ones of the plurality of cascaded delay stages.
11. The integrated circuit of claim 1 further comprising:
divider circuitry having divider stages coupled to the adjustable
oscillator circuit for dividing the clock signal to produce an output
signal having a frequency which is less than a frequency of the clock
signal.
12. The integrated circuit of claim 11 wherein the divider circuitry
further comprises:
disable circuitry for disabling unused ones of the divider stages.
13. The integrated circuit of claim 1 wherein the integrated circuit is a
memory device.
14. The integrated circuit of claim 1 further including disable circuitry
to disable part of the adjustable oscillator to reduce power consumption.
15. The integrated circuit of claim 1 wherein the control circuitry adjusts
the frequency of the clock signal when an error is detected in operating
the integrated circuit.
16. A flash memory device comprising:
an adjustable oscillator circuit for producing a clock signal that controls
multiple functions of the flash memory device;
internal circuitry for measuring multiple dynamic parameters of the memory
device; and
control circuitry for adjusting a frequency of the clock signal to a fast
operable frequency in response to the measured dynamic parameters.
17. The flash memory device of claim 16 wherein the internal circuitry for
measuring at least one of the dynamic parameters comprises a temperature
detector for detecting a temperature of the flash memory.
18. The flash memory device of claim 17 wherein the temperature detector
comprises:
a reference circuit for providing a plurality of reference voltages;
a temperature sensitive unit for producing a temperature sensitive voltage;
and
a plurality of differential circuits coupled to the temperature sensitive
unit and the reference circuit, each of the differential circuits
comparing one of the plurality of reference voltages with the temperature
sensitive voltage for providing an output on a plurality of output lines.
19. The flash memory device of claim 18 wherein the temperature sensitive
unit comprises a diode connected between the plurality of differential
circuits and ground potential.
20. The flash memory device of claim 19 wherein the diode is fabricated as
a transistor having a connected gate and drain.
21. The flash memory device of claim 17 wherein the temperature detector
provides a multiple-bit output signal.
22. The flash memory device of claim 16 wherein the internal circuitry for
measuring the multiple dynamic parameters comprises a voltage detector for
detecting a supply voltage level of the flash memory.
23. The flash memory device of claim 22 wherein the voltage detector
comprises:
a voltage divider circuit coupled between the supply voltage and a lower
voltage; and
a plurality of differential circuits coupled to the voltage divider circuit
and a reference voltage, each of the differential circuits comparing a
voltage sampled from the voltage divider circuit with the reference
voltage for providing an output on a plurality of output nodes.
24. The flash memory device of claim 23 wherein the voltage detector
further comprises:
reset circuitry for resetting the output on the output nodes to a
predetermined level, and disabling the differential circuits.
25. The flash memory device of claim 24 wherein the reset circuitry further
comprises:
pull-up transistors connected to the output nodes, the pull-up transistors
being activated by a reset signal; and
disable circuitry connected to the plurality of differential circuits for
disabling the plurality of differential circuits in response to the reset
signal.
26. The flash memory device of claim 23 wherein the voltage detector
provides a four bit output signal on the plurality of output nodes.
27. The flash memory device of claim 16 wherein the adjustable oscillator
circuit comprises:
a ring oscillator having a plurality of cascaded delay stages: and
controllable feedback circuitry for selectively coupling an output of one
of the cascaded delay stages to an input of the ring oscillator.
28. The flash memory device of claim 27 further comprising:
a multiplex circuit connected to the ring oscillator for selectively
coupling one of the plurality of cascaded delay stages to an input of the
ring oscillator in response to multiplex circuit input signals.
29. The flash memory device of claim 28 further comprising:
a small delay adjustment circuit located between the multiplex circuit and
the input of the ring oscillator for further adjusting a frequency of the
clock signal.
30. A flash memory device comprising:
an adjustable ring oscillator having a plurality of cascaded delay stages
for producing a clock signal;
controllable feedback circuitry for selectively coupling an output of one
of the cascaded delay stages to an input of the ring oscillator;
internal circuitry for measuring a dynamic parameter of the memory device;
control circuitry for adjusting a frequency of the clock signal in response
to a measured dynamic parameter; and
a register circuit coupled to the ring oscillator to disable unused ones of
the plurality of cascaded delay stages.
31. The flash memory device of claim 16 further comprising:
calibration circuitry for calibrating the adjustable oscillator circuit to
a nominal clock signal frequency.
32. The flash memory device of claim 31 wherein the calibration circuitry
comprises:
a counter coupled to the adjustable oscillator circuit for counting
transitions of the clock signal and providing an output; and
a calibrate input coupled to the counter for receiving a calibrate pulse
signal having a predetermined duration.
33. A flash memory device comprising:
an adjustable oscillator circuit for producing a clock signal;
internal circuitry for measuring a dynamic parameter of the memory device;
control circuitry for adjusting a frequency of the clock signal in response
to a measured dynamic parameter;
calibration circuitry for calibrating the adjustable oscillator circuit to
a nominal clock signal frequency;
a counter coupled to the adjustable oscillator circuit for counting
transitions of the clock signal and providing an output;
a calibrate input coupled to the counter for receiving a calibrate pulse
signal having a predetermined duration; and
a buffer coupled to the counter for gating an output count of the counter.
34. The flash memory device of claim 31 wherein the calibration circuitry
further comprises:
an enable circuit coupled between the calibrate input and the counter for
enabling the counter in response to either the calibrate pulse or a second
input signal.
35. The flash memory device of claim 16 wherein the control circuitry
adjusts the frequency of the clock signal to maintain a constant flash
memory device operating speed.
36. The flash memory device of claim 16 wherein the control circuitry
adjusts the frequency of the clock signal to optimize performance of the
flash memory device.
37. The flash memory device of claim 16 further including disable circuitry
to disable part of the adjustable oscillator to reduce power consumption.
38. The flash memory device of claim 16 wherein the control circuitry
adjusts the frequency of the clock signal when an error is detected in
operating the flash memory device.
39. A method of operating a memory circuit having an adjustable oscillator
circuit for providing a clock signal, the method comprising:
calibrating the adjustable oscillator circuit to provide a clock signal
that controls multiple functions and has a predetermined frequency;
detecting multiple dynamic parameters of the memory circuit; and
adjusting the adjustable oscillator in response to the detected dynamic
parameters to change the frequency of the clock signal to a fast operable
frequency.
40. The method of claim 39 wherein the oscillator comprises a cascaded
series of delay stages, and the step of adjusting the oscillator
comprises:
selectively coupling an output of one of the delay stages to an input of
the oscillator through a feedback circuit.
41. The method of claim 40 further comprising disabling unused ones of the
delay stages to save power consumption.
42. The method of claim 39 wherein detecting multiple dynamic parameters of
the memory circuit further comprises detecting a temperature of the memory
circuit.
43. The method of claim 42 wherein the step of detecting a temperature
comprises:
providing a multiple bit output signal from a temperature detector circuit
indicating a temperature range; and
providing a feedback control signal in response to the step of comparing
for adjusting the adjustable oscillator.
44. The method of claim 43 further comprising comparing the multiple bit
output signal with data stored in the memory circuit.
45. The method of claim 39 wherein detecting multiple dynamic parameters of
the memory circuit further comprises detecting a supply voltage of the
memory circuit.
46. The method of claim 45 wherein detecting a supply voltage comprises:
providing a multiple bit output signal from a supply voltage detector
circuit indicating a supply voltage range; and
providing a feedback control signal in response to the step of comparing
for adjusting the adjustable oscillator.
47. The method of claim 43 further comprising comparing the multiple bit
output signal with data stored in the memory circuit.
48. The method of claim 39 wherein calibrating the adjustable oscillator
circuit comprises:
counting transitions of the clock signal during a predetermined time
period;
comparing the count of the transitions with data stored in the memory
circuit; and
providing a feedback control signal in response to the step of comparing
for adjusting the adjustable oscillator to provide the clock signal having
a predetermined frequency.
49. A method of operating a memory circuit having an adjustable oscillator
circuit for providing a clock signal, the method comprising;
calibrating the adjustable oscillator circuit to provide a clock signal
having a predetermined frequency;
detecting a dynamic parameter of the memory circuit in response to a
condition selected from the conditions comprising:
power is supplied to the memory;
the memory is placed in an idle state;
an error is detected in operation of the memory;
a predetermined number of program verify failures are detected in memory
operation;
an erase failure is detected in memory operation;
a user command to check and adjust the dynamic parameter is received; and
a user command to load adjustment values is received; and
adjusting the adjustable oscillator in response to the detected dynamic
parameter to change the frequency of the clock signal.
50. A method of operating a memory device comprising a clock circuit for
providing a clock signal having a frequency, the memory device being
designed to operate over an environmental parameter having lower, nominal,
and upper levels, the method comprising the steps of:
adjusting the clock circuit so that the frequency of the clock signal is at
a predetermined level when the environmental parameter is at the nominal
level;
detecting a level of the environmental parameter;
adjusting the frequency of the clock signal based upon the detected level
of the environmental parameter;
monitoring the operation of the memory device to detect operating errors;
resetting the clock circuit to the predetermined level if errors are
detected;
detecting a new level of the environmental parameter after the clock
circuit has been reset; and
adjusting the frequency of the clock signal based upon the detected new
level of the environmental parameter.
51. A integrated circuit system comprising:
a plurality of integrated circuits, each of the integrated circuits
comprising:
an adjustable oscillator circuit for producing a clock signal that controls
multiple functions, and
an internal detection circuit for measuring a plurality of dynamic
parameters and outputting an output signal; and
a controller coupled to the plurality of integrated circuits, the
controller adapted to receive an output signal from the internal detection
circuit of each of the plurality of integrated circuits, and provide a
clock adjust signal to adjust a frequency of the clock signal of each of
the adjustable oscillator circuits to a fast operable frequency in
response to the output signals.
52. The integrated circuit system of claim 51 wherein the at least one of
the plurality of dynamic parameters is temperature.
53. The integrated circuit system of claim 52 wherein the at least one of
the plurality of dynamic parameters is a supply voltage level.
54. The integrated circuit system of claim 51 wherein the internal
detection circuit measures both temperature and supply voltage.
55. The integrated circuit system of claim 51 wherein the controller
calibrates the clock signal of the adjustable oscillator.
56. The integrated circuit system of claim 51 wherein the plurality of
integrated circuits comprise flash memory devices.
57. The integrated circuit system of claim 51 wherein the controller
comprises:
a data register containing data corresponding to possible states of the
output signal, the controller providing the clock adjust signal based upon
data retrieved from the data register.
58. A method of operating an integrated circuit, the method comprising the
steps of:
monitoring environmental operating conditions;
reading a state of a data flag;
retrieving a clock setting corresponding to the monitored operating
conditions from a first data table if the data flag is in a first state,
and selecting a clock frequency so that the integrated circuit operated at
its maximum performance under the monitored environmental operating
conditions;
retrieving a clock oscillator setting corresponding to the monitored
operating conditions from a second data table if the data flag is in a
second state, and adjusting a clock oscillator so that the integrated
circuit operates at a constant frequency under changes in the monitored
environmental operating conditions.
59. A flash memory circuit comprising:
an adjustable oscillator circuit for producing a clock signal that controls
multiple functions of the flash memory;
multiple sensors for detecting multiple dynamic parameters of the flash
memory circuit;
a lookup table containing a delay offset factor for each combination of the
multiple dynamic parameters of the flash memory circuit; and
control circuitry for adjusting the adjustable oscillator circuit to to
produce the clock signal at the constant frequency based on the delay
offset factor loaded from the lookup table. |
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Claims  |
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Description  |
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TECHNICAL FIELD OF THE INVENTION
The present invention relates generally to integrated circuits and in
particular the present invention relates to dynamically controlling the
operation of an integrated circuit.
BACKGROUND OF THE INVENTION
Almost all electronic systems rely on a clock source and clock signal to
act as a master timing element for control of hardware included in the
system. Several different methods of generating a clock signal are known
to those skilled in the art. Three commonly used oscillators described
below are based on either a crystal, a resistor-capacitor network, or a
ring oscillator. None of these options provide a low cost, high accuracy
clock signal.
Traditional methods of generating the clock signal have used crystals.
While this method is well known and is very reliable, several problems are
introduced when the electronic system package is reduced in size.
Additional problems are encountered when reducing the cost and power
consumption of the system become dominant considerations.
The frequency of a crystal operating point is determined by the physical
characteristics of the crystalline structure. This physical dependance
dictates the size of the package, preventing its use in some applications
required to fit into very small packages, such as small memory cards.
Further, crystal oscillators require valuable circuit board space and have
minimum height restrictions. A system incorporating a crystal, therefore,
is limited in the ability to reduce packaging sizes. A crystal-based
system also requires extra pins for connecting the crystal to an
integrated circuit requiring the clock signal. In addition, a typical
crystal design requires a resistor and capacitor, adding cost, but more
importantly taking more board space.
Crystal oscillator designs have additional disadvantages. The crystal
oscillators do not operate over extended voltage ranges. Therefore, a
supply voltage which ranges from three to five volts can create problems.
Crystals also have long start times when power to the system is turned on.
These start times must be taken into account so that glitches and low
voltage signals do not make the system malfunction. During a start-up, the
oscillator can be disconnected from the system until the crystal has
reached a stabile operating point. The time required to stabilize the
crystal can be quite long and will reduce the performance of systems that
require extensive use of power on/off. One type of system affected is
portable battery-driven circuits which turn off the power supply to
conserve the battery. In addition to the power and performance problems
described, crystals are somewhat expensive and further add to the cost of
systems.
Crystal-based systems can be quite power demanding. If a crystal oscillator
is used, it requires significant current for its operation, typically 1 mA
per 1 megahertz of operation. For example, if a crystal is used across an
inverter in an integrated circuit, the inverter must be of sufficient
strength to allow oscillation and drive the loads required. This typically
requires large current for proper operation. Because of the slow start-up
time, the systems tend to leave power applied to the crystal. Again,
continuously powering the crystal results in high power consumption,
making the systems less attractive in battery applications.
One solution that designers have devised to reduce the slow start up time
of crystals is to use of resistor-capacitor (RC) oscillator designs. RC
oscillators do not have the frequency accuracy of crystal oscillator, but
have other operational advantages. The use of an RC oscillator essentially
allows instant start-up of the clock signal from a stopped state. This
design option also has problems that make for a less than ideal solution.
While this approach solves the delay time for starting or stopping the
clock, it still requires external resistor and capacitor components which
add to the package space requirements. An RC oscillator also requires
additional pins for the circuit, typically 2 output and 1 input pin.
Driver circuits used to output the RC clock signals tend to be larger than
what would be used to drive internal signals. Thus, the RC oscillator
circuit requires more power than an internally generated clock or driver
signal. Further, variations between the components in the RC network also
introduce variations in the clock frequency. Ways of reducing these
variations are possible, but can be costly.
Ring oscillators have been used as an easy way to make an oscillating
signal, and have been incorporated in many electronic circuits. The ring
oscillator is commonly used in integrated circuit designs where an exact
clock signal is not required. In systems, such as Flash memory systems, a
ring oscillator can be used that would allow the system to function. Large
performance variations, however, would be seen by the system as the ring
oscillator varied over process differences, voltage variations and
temperature excursions. In most cases the resultant wide range of
operating parameter frequencies would be intolerable and would make for a
noncompetitive product.
Systems which do not require the accuracy of a crystal oscillator can be
operated using either a RC oscillator or a ring oscillator. A Flash memory
system is an example of a system where some variation in timing can be
tolerated, if lower cost and power savings can be realized. The ring
oscillator is the most attractive because it requires less power, less
pins and has fast start-stop gating. The huge drawback of this approach is
the wide variations in clock signal frequency over operating parameter
variables such as voltage and temperature that typically would be seen by
such a system.
For the reasons stated above, and for other reasons stated below which will
become apparent to those skilled in the art upon reading and understanding
the present specification, there is a need in the art for an integrated
circuit which optimizes operating performance by dynamically monitoring
environmental parameters and adjusting the operation and clock signal
frequency.
SUMMARY OF THE INVENTION
The above mentioned problems with clock signal variations and other
problems are addressed by the present invention and which will be
understood by reading and studying the following specification. An
integrated circuit is described which adjusted to compensate for
oscillator variations.
In particular, the present invention describes an integrated circuit
comprising an adjustable oscillator circuit for producing a clock signal,
and control circuitry for adjusting a frequency of the clock signal in
response to a measured dynamic parameter of the integrated circuit. In
another embodiment, a flash memory device is described which comprises an
adjustable oscillator circuit for producing a clock signal, internal
circuitry for measuring a dynamic parameter of the memory device, and
control circuitry for adjusting a frequency of the clock signal in
response to a measured dynamic parameter. In both embodiments, the dynamic
parameter can be either, or both a temperature of the integrated circuit,
or a supply voltage level of the integrated circuit.
In yet another embodiment, a method is described for operating a memory
circuit having an adjustable oscillator circuit for providing a clock
signal. The method comprises the steps of calibrating the adjustable
oscillator circuit to provide a clock signal having a predetermined
frequency, detecting a dynamic parameter of the memory circuit, and
adjusting the adjustable oscillator in response to the detected dynamic
parameter to change the frequency of the clock signal.
A method is described for operating a memory device comprising a clock
circuit for providing a clock signal having a frequency, the memory device
being designed to operate over an environmental parameter having lower,
nominal, and upper levels. The method comprising the steps of adjusting
the clock circuit so that the frequency of the clock signal is at a
predetermined level when the environmental parameter is at the nominal
level, detecting a level of the environmental parameter, and adjusting the
frequency of the clock signal based upon the detected level of the
environmental parameter. The method also includes the steps of monitoring
the operation of the memory device to detect operating errors, resetting
the clock circuit to the predetermined level if errors are detected,
detecting a new level of the environmental parameter after the clock
circuit has been reset, and adjusting the frequency of the clock signal
based upon the detected new level of the environmental parameter.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1A is a block diagram of a flash memory system
FIG. 1B is a detailed diagram of the flash memory of FIG. 1A;
FIG. 1C is a detailed diagram of a flash memory card;
FIG. 2 is a schematic diagram of a prior art ring oscillator;
FIG. 3 is a schematic diagram of an adjustable ring oscillator;
FIG. 4 is a schematic diagram of a ring oscillator adjustment circuit; and
FIG. 5 is a schematic diagram of a temperature detector circuit;
FIG. 6 is a schematic diagram of a voltage detector circuit;
FIG. 7A is a block diagram of an integrated circuit incorporating a
detection circuit;
FIG. 7B is a block diagram of an alternate integrated circuit incorporating
a detection circuit;
FIG. 7C is a block diagram of a system having a detection circuit;
FIG. 8 is a diagram of a prior art clock divide circuit; and
FIG. 9 is a diagram of a clock divide circuit of the pres | | |