The invention relates to a method for reducing a transient thermal mismatch between a first component and a second component which are in mechanical contact with one another. The temperature of the first component is controlled by the amount of energy dissipated thereby. The amount of energy dissipated is controlled as a function of a data pattern input into the first component which causes a certain number of gates within the component to switch per clock cycle. By determining the desired energy dissipation in terms of the number of gates which are to be switched and arranging the input data pattern accordingly, the thermal mismatch between the components may be reduced.
In a hardening temperature profile of a paste material for fixing a lead-frame to a semiconductor chip, a heating temperature from a first sub-zone to a third sub-zone is set to 150.degree. C. and a heating temperature from a fourth sub-zone to a sixth sub-zone is set to a maximum value of 230.degree. C. at a first heating step of a chip fixing step. Then, in the hardening temperature profile, a heating temperature of a seventh sub-zone is set to 180.degree. C. having a drop width from the sixth sub-zone of 50 degrees and a heating temperature of an eighth sub-zone is set to 130.degree. C. having a drop width from the seventh sub-zone of 50 degrees at a second heating step of the chip fixing step.
Thermal throttling control to safely throttle clocks OFF and ON in an integrated circuit. Digital thermal throttling control is provided to gradually throttle a clock's frequency from ON to OFF and from OFF to ON. The gradual throttling can minimize an instantaneous current rise that would otherwise occur with a rapid shut OFF and a rapid turn ON of a clock. Included are methods and apparatus for digital thermal throttle control in an integrated circuit.
The present invention provides a method for controlling power change for a semiconductor module. Specifically, under the present invention power is applied to, or removed from a semiconductor module between a lower power state such as a zero power, nap or sleep state and a full power state over a predetermined time period. This allows the rate of movement and strain rate of the thermal interface material within the semiconductor module to be controlled, thus preserving the reliability of the material. Typically, the power is changed over time between the lower power state and the full power state in a linear fashion or incrementally.
Thermal throttling control to safely throttle clocks OFF and ON in an integrated circuit. Digital thermal throttling control is provided to gradually throttle a clock's frequency from ON to OFF and from OFF to ON. The gradual throttling can minimize an instantaneous current rise that would otherwise occur with a rapid shut OFF and a rapid turn ON of a clock. Included are methods and apparatus for digital thermal throttle control in an integrated circuit.
A semiconductor component includes a stiffener, a circuit decal attached to the stiffener, and a semiconductor die attached to the stiffener. The circuit decal includes conductors which function as an internal signal transmission system for the component, and a mask layer which functions as a solder mask and an outer insulating layer for the component. An adhesive layer in physical contact with the conductors attaches the circuit decal to the stiffener, and electrically insulates the conductors from the stiffener. The component also includes an area array of terminal contacts on the conductors electrically isolated by the mask layer. A method for fabricating the component includes the steps of attaching the circuit decal to the stiffener, attaching the die to the stiffener, interconnecting the die and the circuit decal, encapsulating the die, and forming the terminal contacts.
