A method for depositing an aluminum film limits the growth of voids and notches in the aluminum film and forms and aluminum film with a reduced amount of voids and notches. The first step of the method is to form an underlying layer upon which is deposited an aluminum film having a first thickness. The surface of the aluminum film is then exposed to a passivation species which coats the aluminum grains and precipitates at the grain boundaries so as to prevent grain movement. The exposure of the aluminum film to the passivation species reduces void formation and coalescence of the voids. An aluminum layer having a second thickness is then deposited over the initially deposited aluminum layer. In a second embodiment of the invention, the passivation species is deposited with MOCVD and to form an electromigration-resistant alloy. A third embodiment involves multiple depositions of aluminum, with exposure to a passivation species conducted after each deposition. Each deposition is also conducted at a successively lower temperature than the prior deposition.
A method for forming a metal layer for an integrated circuit device includes forming a first conductive layer on an integrated circuit substrate. While forming the first conductive layer, a reflection index of the first conductive layer is monitored, and the formation of the first conductive layer is terminated when the reflection index of the first conductive layer reaches a predetermined value. More particularly, the first conductive layer can be an aluminum layer having a thickness in the range of approximately 500 Angstroms to 1500 Angstroms.
A method of forming an aluminum-based layer mainly including aluminum on a surface of an insulating layer and within a hole formed in the insulating layer. The method includes the steps of: carrying out a chemical vapor deposition to deposit the aluminum-based layer on the surface of the insulating layer and also to incompletely fill the hole to not less than 75% by volume of the hole by use of a source including at least one of alkyl groups and hydrogen so that a surface of the aluminum-based layer is terminated by the at least one of alkyl groups and hydrogen included in the source, and so that the surface of the aluminum-based layer is free of any natural oxide film; and carrying out a heat treatment, without formation of any natural oxide film on the surface of the aluminum-based layer, for causing a re-flow of the aluminum-based layer, whereby the at least one of alkyl groups and hydrogen promotes a migration of aluminum atoms on the surface of the aluminum-based layer.
A method of forming a wiring of an aluminum material having a low-temperature sputtering process for sputtering an aluminum material (aluminum or an alloy composed mainly of aluminum) at a temperature of below 300.degree. C. and a high-temperature sputtering process for sputtering at or above 300.degree. C., a film thickness (A) obtained by the low-temperature sputtering process is larger than a film thickness (B) obtained by the high-temperature sputtering process, and a deposition rate at high temperature sputtering is a rate which does not deteriorate the shape of a registration accuracy measurement mark, preferably 200 nm/min or less.
The present invention is An electrical interconnection on a substrate and a method for forming an electrical interconnection on a substrate. The electrical interconnection in the present invention comprises a first metal layer, a first diffusion barrier layer on the first metal layer, a second metal layer on the first diffusion barrier layer, an organometallic layer on the second metal layer, and an electrical interconnect layer on the organometallic layer. The first diffusion barrier layer prevents diffusion of the first metal layer and the second metal layer therethrough. The organometallic layer is preferably formed by contacting the second metal layer with an organic material to form a organometallic layer. The organometallic layer chemically and physically protects the second metal layer, particularly by preventing the oxidation thereof.
A microstructure comprises a conductive layer of aluminum, copper or alloys thereof on a substrate wherein the layer comprises metal grains at least about 0.1 microns and barrier material deposited in the grainboundaries of the surface of the metal is provided along with a method for its fabrication.
