In a method and apparatus for producing a vapor containing a liquid chemical by bubbling a carrier gas through a mass of the liquid chemical, vapor production is monitored by: determining successive values of the pressure of the carrier gas being delivered to the mass of liquid chemical, over a time period; and calculating, on the basis of the successive values of the pressure, the frequency of bubble formation during the bubbling of the carrier gas.
A method and apparatus for the bulk delivery of a precursor, such as an organometallic compound, from a bulk container, such as a bubbler (1) to a plurality of reactor sites (12, 14, 16, 18, 20) wherein a carrier gas (2) is introduced into the container (1) of the precursor to pick up the precursor to form a gaseous mixture. The gaseous mixture is then selectively distributed to one or more of a plurality of reactor sites (12, 14, 16, 18, 20). The gaseous mixture may be stored in a reservoir (9) and be drawn by means of a pressure differential or under vacuum to each of the reactor sites, when required.
A bubbler ampoule and bubbler assembly for containing highly corrosive chemicals is configured so as to provide enhanced strength which allows safe transport and usage of high vapor pressure chemicals. The enhanced assembly strength is provided by controlling the ratio of the bottom wall thickness to the side wall thickness of the ampoule; and by providing properly radiused corners on the ampoule.
A deposition system for performing chemical vapor deposition comprising deposition chamber and a vaporizer coupled to said chamber. In one aspect, the vaporizer has a relatively short mixing passageway to mix a carrier gas with a liquid precursor to produce a fine aerosol-like dispersion of liquid precursor which is vaporized by a hot plate.
Method and apparatus generate a mixture of the vapor of an organic liquid such as tetraethylorthosilicate (TEOS) and an inert gas such as helium. The ratio of organic vapor to inert gas in the mixture is accurately and continuously controlled as required in semiconductor manufacturing. The apparatus encloses a bubbler chamber which is filled with an organic liquid (e.g., TEOS) to a set level that is automatically maintained. The liquid is also maintained at an exact temperature (e.g., 75.degree. C.). Inert gas (e.g., helium) flows into the bubbler chamber at a controlled rate and continuously evaporates some of the liquid therein. The flow of liquid into the bubbler chamber is monitored by a liquid control circuit, and flow of gas is controlled by a gas control circuit. A feedback signal from the liquid control circuit to the gas control circuit incrementally adjusts gas flow into the bubbler chamber to keep the liquid therein at the set level.
In order to evaporate a liquid substance (3) and convey it to a user, a bubbler (1) is provided, into which a carrier gas (7) is conveyed. When a minimum level (4) has been reached, an exact quantity of the substance (3) is refilled from a reservoir tank (15). For this purpose, an intermediate tank (25) is provided, which is filled with an inert gas up to a pressure P1. An inert gas (21) is applied to the reservoir tank (15) at a pressure P2, higher than P1. The intermediate tank (25) is connected with the reservoir tank (15), as a result of which a specific quantity of the substance (3) flows into the intermediate tank (25) and is conveyed via a connection line (17) to the bubbler (1), with inert gas (32) first having been applied to the connection line (17) at a pressure P3, lower than P2.