An aqueous oxidizing acidic cleaning solution or an aqueous oxidizing alkaline cleaning solution is produced by mixing an acidic or alkaline solution with ozone water. An aqueous reducing acidic cleaning solution or an aqueous reducing alkaline cleaning solution is produced by mixing an acidic or alkaline solution with hydrogen water. Each of these aqueous cleaning solutions has effective cleaning power and the ORP and pH values thereof are separately controlled. Therefore, by selecting an appropriate aqueous cleaning solution according to the types of contaminants adhering to subjects during each manufacturing step, a plurality of types of contaminants can be removed by washing with one type of aqueous cleaning solution.
A simple cleaning method which can remove metal, organic and fine particle contaminants on the surface of electronic components, and especially those on silicon bases, and also suppress an increase in the roughness of base surface on the order of atoms during cleaning processes, is provided by cleaning with an oxidizing cleaning fluid, followed by cleaning with a reducing cleaning fluid with the application of ultrasonic vibrations.
A to-be-cleaned substrate is cleaned by use of an acid liquid agent in a cleaning cup, the remaining acid liquid agent is washed out by use of pure water, then an alkaline liquid agent is emitted to the surface of the to-be-cleaned substrate in the same cleaning cup to remove the acid liquid agent remaining on the to-be-cleaned substrate. A neutralization reaction between the acid and alkali is caused by emitting the alkaline liquid agent to the surface of the to-be-cleaned substrate so as to efficiently remove the acid liquid agent remaining on the surface of the to-be-cleaned substrate.
A substrate cleaning apparatus is provided that includes a cleaning cup for receiving a to-be-cleaned substrate, a table in the cleaning cup, a first, second, and third nozzles, a pure water heating mechanism configured to supply hot pure water, a branch line, a control mechanism, and an open/close valve, provided between the branch line and the pipe, wherein the open/close valve is configured to interrupt emission of hot water from the third nozzle by opening the open/close valve to lower the pressure in the pipe.
A substrate treatment process is disclosed to remove organic matter existing on a substrate such as a wafer, glass substrate or ceramic. The process comprises treating the substrate with ozone water and then with hydrogen water, or treating the substrate with ozone-hydrogen water or treating the substrate with ozone water and hydrogen water at the same time.
A substrate treatment apparatus comprises a treatment vessel, a substrate holder for rotating the substrate in a horizontal plane in the treatment vessel, a nozzle unit arranged in an upper part of the treatment vessel such that a liquid is downwardly fed, a feed line for feeding the liquid to the nozzle unit, and a chamber enclosing therein the apparatus in its entirety. The nozzle unit is constructed in a form of a bar such that as viewed in plan, the liquid ejected from the nozzle unit reaches the substrate with an area range having a length not smaller than a diameter of the substrate and a width smaller than the diameter of the substrate.
