A semiconductor wafer optical scanning system and method for determining defects on a semiconductor wafer is disclosed. The method for determining wafer defects is based on maximum allowable defects on a swath basis, rather than maximum allowable defects on a wafer basis. The method step include determining the scanned area of an individual swath that is based on a recipe set-up, consistent with the capability of the optical scanning equipment being used and the particular semiconductor wafer being tested for defects. The predetermined swath area is supplied and stored in the optical scanning system along with the maximum allowable defect density determined by the user. By using the predetermined maximum allowable defects for a swath as a limit, defect analysis may be performed on the entire wafer. The optical scanning system would stop acquiring defects for the current swath being analyzed whenever the defect limit is reached, or until the swath defect analysis has been completed. The optical scanning would proceed to the next swath determining its defect and continuing in such a manner until the wafer is completely scanned.
A method of detecting defects on dice in semiconductor wafer wherein each dice in a layer is scanned and data from each dice is compared to data collected from an ideal dice obtained from the same level on a pre-production wafer. The data from each dice is compared in an optical comparator with data from the ideal dice stored in a register.
A method for classifying a substrate first provides the substrate and its corresponding inspection map. Then, a database having a plurality of specification data is provided. After that, the inspection map is compared with each of the specification data so as to find the specification data coinciding with the inspection map. Finally, the substrate is defined according to the layout of active areas coinciding with the inspection map, and then the substrate is classified and stored.
A method of manufacturing a semiconductor device including selecting at least one die on at least one wafer in a manufacturing lot of wafers to scan and inspect, processing the wafers through a first process, mapping detected defects with the at least one die selected to be scanned and inspected and determining if the selected at least one die should be scanned and inspected in the next process. If it is determined that the selected at least one die should not be scanned and inspected in the next process, at least one alternative die is selected to be scanned and inspected in the next process.
An imaging sensor includes a defect marker allowing an imaging device in which the imaging sensor is installed to determine which pixels in the CMOS sensor are defective. During manufacturing, the pixels in the imaging sensor are tested. Defect markers are used for defective pixels, preferably using a non-volatile marking technique. After the imaging sensor is installed in the imaging device, the imaging device reads the defect markers from the imaging sensor to determine the defective pixels. The defect markers are read by exposing the pixels in the imaging sensor to photons. Eventually, all pixels in the imaging sensor should show some exposure. Pixels that still read as unexposed are then defective pixels. The imaging device can then compensate for defective pixels: e.g., by interpolating the defective pixels from their neighbors.
An apparatus and method are disclosed for reviewing defects on an object. The apparatus includes a stage for receiving the object thereon, and both an optical microscope and a scanning electron microscope (SEM). The optical microscope is used to redetect previously mapped defects on the object surface, and includes an illumination source that directs a beam of light toward a selected portion of the object surface. The optical microscope is configured to generate either, or both, bright field and dark field illumination. Once the defect has been redetected, a translation system moves the stage a predetermined displacement such that the defect is positioned for review by the SEM. The apparatus can be configured to automatically focus the defect for viewing by the SEM, and rotate the stage to obtain varying perspectives of the defect.
