There is provided a solid-state image sensor including a photodetector array in which a plurality of photodetectors are one- or two-dimensionally arranged, each one of the photodetctors including an electrode in a photoelectric conversion region, and transmitting signals when detecting a light passing through the electrode, the solid-state image sensor converting the signals into time sequence electric signals, the electrode being composed of titanium dioxide (TiO.sub.2). The titanium dioxide preferably contains oxygen vacancies or at least one of tungsten (W), phosphorus (P), antimony (Sb), tantalum (Ta), niobium (Nb), indium (In) and oxides thereof (WO.sub.3, P.sub.2 O.sub.5, Sb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, Nb.sub.2 O.sub.5, In.sub.2 O.sub.3). The above-mentioned solid-state image sensor provides a high quantum efficiency which would be obtained when transparent, electrically conductive material such as ITO (In.sub.2 O.sub.3 --SnO.sub.2) and tin oxide (SnO.sub.2) is used. In addition, the solid-state image sensor enhances designability and productivity, since it has no limitation in fabrication which would exist when the above-mentioned transparent, electrically conductive material is used.
A solid-state imaging device includes a two-dimensional array of photosensor sections on a semiconductor substrate, and a vertical transfer section including two-layer vertical transfer electrodes. The photosensor sections store signal charges generated by photoelectric conversion. The vertical transfer section reads signal charges from the photosensor sections and vertically transfers the read signal charges. The two-layer vertical transfer electrodes have first transfer electrode layers and second transfer electrode layers, and the first transfer electrode layers serve as read electrodes for reading the signal charges from the photosensor sections. The first transfer electrode layers have a larger electrode width with respect to the photosensor sections than the second transfer electrode layers.
An array of photodetectors intended to be hybridized on a readout circuit and fabricated from a wafer in semiconductor material. The wafer is divided into pixels, the pixels being separated from one another by walls formed crosswise over the entire thickness of the wafer, the hybridization surface having connection pads enabling hybridization of the photodetector array to the readout circuit.
There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) comprises a light-receiving sensor section disposed on the surface layer portion of a substrate (21) for performing a photoelectric conversion, a charge transfer section for transferring a signal charge read out from the light-receiving sensor section, a transfer electrode (27) (28) made of polysilicon formed on a substrate (21) at its position approximately above the charge transfer section through an insulating film (26), and an interconnection made of polysilicon and interconnected to the transfer electrode (27) (28). At least one of the polysilicon transfer electrode (27)(28) and the interconnection is formed on a polysilicon layer (27a) (28a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device (10) comprises a buffer layer (1) containing a metal silicide layer (16) is formed between the transfer electrodes (3), (4) and a shunt interconnection layer (7) formed of a metal layer.
There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) includes a light-receiving sensor section disposed on the surface layer portion of a substrate (21) that performs a photoelectric conversion, a charge transfer section that transfers a signal charge read out from the light-receiving sensor section, a transfer electrode (27) (28) made of polysilicon formed on a substrate (21) at a position approximately above the charge transfer section through an insulating film (26), and an interconnection made of polysilicon and interconnected to the transfer electrode (27) (28). At least one of the polysilicon transfer electrode (27)(28) and the interconnection is formed on a polysilicon layer (27a) (28a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device (10) comprises a buffer layer (1) containing a metal silicide layer (16) is formed between the transfer electrodes (3), (4) and a shunt interconnection layer (7) formed of a metal layer.
A CCD image sensor includes photodiodes, vertical transfer CCDs for transferal of signal charge of the photodiodes, and a light shielding layer for protection of the vertical transfer CCDs from light. The light shielding layer covers over recesses disposed above the photodiodes, and each of the recesses has an opening on the bottom to expose a light receiving surface of the photodiode. A light diffusion layer is formed on the light shielding layer in each recess. Since the incident light oblique to an optical axis of a microlens is diffused by the light diffusion layer, the vertical CCDs hardly receive the light coming from around the edges of the opening.
