A circuit, for detecting a junction temperature of an insulated gate bipolar transistor (IGBT) which is alternately biased on and off in response to a gate signal, includes a differentiator circuit operable to receive a collector to emitter voltage of the IGBT and produce an output voltage proportional to a rate at which the collector to emitter voltage changes; and a feedback circuit operable to receive the output voltage and alter the gate signal when the output voltage indicates that the rate at which the collector to emitter voltage changes is outside a predetermined limit.
CROSS REFERENCE TO RELATED APPLICATION
This application is based on and claims priority to U.S. Provisional Patent Application Ser. No. 60/047,234, filed May 20, 1997, entitled INSTANTANEOUS JUNCTION TEMPERATURE DETECTION.
