A method for filling, with a conductive material, a high aspect ratio opening such as a via hole or a trench opening within an integrated circuit minimizes the formation of voids and seams. This conductive material such as copper which fills the high aspect ratio opening is amenable for fine line metallization. The method of the present invention includes steps for enhancing copper plating processes such as copper electroplating or copper electroless plating. This method includes a first step of copper plating for depositing a thin layer of copper within the integrated circuit opening. This thin layer preferably has a thickness on the field regions surrounding the opening that is less than 1/2 of the width of the opening. Then, copper reflow heats this thin deposited copper layer within the opening to minimize the occurrence of any seams within this copper layer. Finally, a second step of copper plating completely fills the integrated circuit opening. This two-step copper plating process with intermittent copper reflow minimizes formation of seams and subsequently minimizes eletromigration failure within filled integrated circuit openings having high aspect ratio.
The present invention pertains to systems and methods for reducing the agglomeration of copper deposited by physical vapor deposition. More specifically, the invention pertains to systems and methods for depositing copper seed layers on a semiconductor wafer. The invention involves the use of an anti-agglomeration agent, so that the copper deposition is completed in an even, continuous and conformal manner.
A method for forming a metal wiring of a semiconductor includes forming an inter metal dielectric layer on a semiconductor substrate having a predetermined low structure with a conductive layer. A plurality of contact holes is formed to expose the conductive layer through the inter metal dielectric layer. A first titanium nitride layer is formed on sidewalls of the contact holes. The first titanium nitride layer is plasma processed. A first titanium silicon nitride layer is formed on the first titanium nitride layer. Metal plugs are formed on the first titanium silicon nitride layer. The metal plugs, the first titanium silicon nitride layer, and the first titanium nitride layer are polished to expose the inter metal dielectric layer. Metal wirings are formed to cover the contact holes.
The reliability of in-laid metallization patterns, e.g., of copper or copper alloy, is significantly enhanced by voidlessly filling recesses in a substrate by an electroplating process, wherein "pinching-off" of the recess opening due to formation of overhanging metal deposits as a result of increased rate of electrodeposition thereat is prevented. Embodiments include preliminarily selectively rendering the recess opening surface non-conductive. The inventive method also enables a reduction in electrodeposition over non-recessed areas, thereby reducing the time required for planarization, as by CMP.
A TiSiN (titanium silicon nitride) film or a multilayered film comprised of a TiSiN film and a TiSi film is used as a hard mask. The TiSiN film (1a) has good adherence to and a high etch selectivity to metal (2), and TiSi is a material having a higher etch selectivity to metal than TiSiN. The use of these materials as an etch mask solves problems with a conventional hard mask such as an SiO.sub.2 film. The use of the TiSiN film also as a barrier metal layer (3) allows the process to proceed rapidly in the steps of forming and removing the hard mask and the barrier metal layer. An etching method uses the hard mask made of the material which has good adherence to and a high etch selectivity to an electrode material and which requires the uncomplicated steps of forming and removing the same.
The present invention is related to a method for depositing a metal-containing film from a metal plating bath, comprising the steps of subsequently depositing a metal-containing layer from a metal plating bath followed by a heating step and/or a vacuum step, said subsequent steps being repeated for a number of times in different sequences.
