A method of stabilizing a halogen-doped silicon oxide film to reduce halogen atoms migrating from said film during subsequent processing steps. A halogen-doped film is deposited over a substrate and then subjected to a degassing step in which the film is briefly heated to a temperature of between about 300 and 550.degree. C. before deposition of a diffusion barrier layer. It is believed that such a heat treatment step removes loosely bonded halogen atoms from the halogen-doped film and thus the treatment is referred to as a degassing step. In a preferred version of this embodiment, the halogen-doped silicon oxide film is an FSG film that is subjected to a degassing treatment for between about 35 and 50 seconds.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a division of and claims the benefit of U.S. application Ser. No. 08/646,862, filed May 8, 1996, now U.S. Pat. No. 5,763,010, the disclosure of which is incorporated by reference.
Disclosed is a heat treating method for heating a target substrate by means of light irradiation, in which a light irradiation treatment is applied to the target substrate a plurality of times such that adjacent light irradiated regions on the target substrate partially overlap with each other and that the adjacent light irradiated regions do not overlap with each other in the light irradiating periods.
Disclosed is an apparatus for heating a target substrate by means of light irradiation. The heating apparatus includes a substrate support section for supporting the target substrate, an irradiating light generating section for irradiating the light irradiating regions of the target substrate supported by the substrate support section, and a light irradiating region changing section for changing the light irradiating regions of the target substrate irradiated with the light generated from the irradiating light generation section.
Disclosed is a heat treating method for heating a target substrate by means of light irradiation, in which light irradiation treatment is applied to the target substrate such that the light irradiation regions of the target substrate do not overlap with each other, the light irradiation treatment being performed by using an irradiating light adjusted such that the distribution of the light intensity within the light irradiation region of the target substrate is rendered uniform.
Within a method for forming a halogen doped glass layer, such as a fluorosilicate glass (FSG) layer, there is first provided a substrate. There is then formed over the substrate a first halogen doped glass layer. There is then formed upon the first halogen doped glass layer a barrier layer. There is then formed upon the barrier layer a second halogen doped glass layer. Finally, there is then planarized the second halogen doped glass layer, while not penetrating the barrier layer, to form a planarized halogen doped glass layer.
An intermetal dielectric structure for integrated circuits and a manufacturing method therefore is provided having a premetal dielectric and a metal line thereon, with a SRO liner on the premetal dielectric layer and the metal lines, a FGS dielectric layer over the SRO liner, a SRO film over the FGS dielectric layer, and a TEOS dielectric layer over the SRO film. Vias through the FGS dielectric layer are treated to have fluorine-free regions around the vias. The structure is not subject to fluorine attack on the metal lines or vias while having a stable FGS dielectric layer with less fluorine out-gassing and out-diffusion.
