A semiconductor workpiece cleaning apparatus includes a cleaning arrangement that cleans a semiconductor workpiece by use of a cleaning liquid, a charging arrangement that brings into a chamber a drying liquid, and a discharging arrangement that discharges the cleaning liquid. The cleaning arrangement cleans the workpiece by spraying chemical liquid and/or pure water in the chamber, and by immersing the workpiece in the chemical liquid and/or pure water. The charging arrangement takes in the drying chemical liquid or vapor so as to contact the processing chemical liquid or pure water in which the semiconductor workpiece is immersed. The discharging arrangement discharges the processing chemical liquid or pure water while preserving an interface between the processing chemical liquid or pure water and the drying chemical liquid or vapor.
A single chamber processing apparatus employing a plurality of kinds of processing material to process a spinning substrate in a chamber and selectively recycle the remaining processing material. The processing apparatus comprises a grouping recovery device for selectively recycling the remaining processing material. Thus, a single chamber processing apparatus having multi-chamber functions is provided.
An etching machine comprises a cleaning solution sprayer, further comprising at least a first nozzle positioned above a center of the wafer and a second nozzle positioned above an edge of the wafer. The semiconductor wafer is spun and simultaneously a cleaning solution is sprayed on the center and the edge of the wafer via the first nozzle and the second nozzle, respectively, to evenly rinse the residual etching solution on the surface of the wafer. The semiconductor wafer is spun dry with a nitrogen purge on the wafer surface at the end of the method.
In a method of treating substrates a treatment fluid is fed into a collection vessel after treatment, at least a portion of the treatment fluid is withdrawn from the collection vessel and returned to respective reservoir and the collection vessel is rinsed before receiving another treatment fluid.
A deionized water temperature control part cools deionized water which is supplied from a deionized water supply source into a processing bath through a pipe after completely cleaning a substrate in the processing bath for maintaining the deionized water at a constant temperature which is lower than the ordinary temperature. A supply port of an IPA.N.sub.2 supply part provided in a casing of a multi-functional processing part is directed upward, thereby supplying IPA vapor upward with carrier gas of N.sub.2 for forming an atmosphere containing IPA vapor in high concentration above the processing bath. Thus, the substrate cooled to a low temperature is dried in the atmosphere containing the IPA vapor of the ordinary temperature in the upper portion of the processing bath when pulled up from the processing bath. Thus, the amount of the IPA vapor dissolved in the deionized water stored in the processing bath may be small, whereby consumption of the IPA vapor as well as generation of particles can be suppressed.
An apparatus for agitating a workpiece in a high pressure environment comprises a workpiece holder, a bearing, a pressure chamber housing, and a nozzle. The workpiece holder couples to the pressure chamber housing via the bearing. The nozzle couples to the pressure chamber housing. The workpiece holder comprises protrusions and a region for holding the workpiece. In operation a fluid exits the nozzle and impinges the protrusions of the workpiece holder causing the workpiece holder to rotate, which agitates the workpiece.
