A method and apparatus for forming a planar surface on a substrate at a desired endpoint. In one embodiment of the invention, material is removed from a substrate with an abrasive medium on a planarizing surface. As material is removed from the substrate, the abrasive medium is selectively inhibited from contacting a first exposed area at the desired endpoint on the substrate while it still contacts a second area on the substrate that is not yet at the endpoint. In this embodiment of the invention, therefore, polishing substantially stops at the first area on the substrate but continues at the second area on the substrate.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a divisional of U.S. patent application Ser. No. 08/761,648, filed Dec. 6, 1996 now U.S. Pat. No. 5,855,804.
A polishing method and a polishing apparatus that are for making contact pressure between a work and a polishing pad substantially uniform within surfaces to obtain a work having good quality. A turn table (2) is supported by a grooved surface of a turn table receiving member (3b), the grooved surface being provided with grooves (9b) in a straight direction, a work (W) is pressed against a polishing pad (8) adhered to the turn table (2) while flowing polishing slurry, and a polishing is carried out by rotating the work (W) and the turn table (2).
The invention provides a polishing pad substrate comprising a copolymer, wherein the copolymer has at least one hydrophilic repeat unit and at least one hydrophobic repeat unit. The invention also provides a polishing pad substrate comprising a polymer, wherein the polymer is a modified polymer having at least one hydrophilic unit and at least one hydrophobic unit attached to the polymer chain. The invention further provides a method of polishing a workpiece comprising (i) providing a workpiece to be polished, (ii) contacting the workpiece with a chemical-mechanical polishing system comprising the polishing pad substrate of the invention, and (iii) abrading at least a portion of the surface of the workpiece with the polishing system to polish the workpiece.
The invention provides a chemical-mechanical polishing pad comprising a polishing layer comprising a hydrophobic region, a hydrophilic region, and an endpoint detection port. The hydrophobic region is substantially adjacent to the endpoint detection port. The hydrophobic region comprises a polymeric material having a surface energy of 34 mN/m or less and a polymeric material having a surface energy of more than 34 mN/m. The invention further provides a method of polishing a substrate comprising the use of the polishing pad.
Planarizing machines, planarizing pads, and methods for planarizing or endpointing mechanical and/or chemical-mechanical planarization of microelectronic substrates. One particular embodiment is a planarizing machine that controls the movement of a planarizing pad along a pad travel path to provide optical analysis of a substrate assembly during a planarizing cycle. The planarizing machine can include a table having an optical opening at an illumination site in a planarizing zone and a light source aligned with the illumination site to direct a light beam through the optical opening in the table. The planarizing machine can further include a planarizing pad and a pad advancing mechanism. The planarizing pad has a planarizing medium and at least one optically transmissive window along the pad travel path. The pad advancing mechanism has an actuator system coupled to the pad and a position monitor coupled to the actuator system. The actuator system is configured to move the planarizing pad over the table along the pad travel path, and the position monitor is configured to sense the position of a window in the planarizing pad relative to the opening in the table at the illumination site.
A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
