The invention includes polishing processes, methods of polishing materials, methods for slowing a rate of material removal of a polishing process, and methods of forming trench isolation regions. In one aspect, the invention includes a method comprising: a) forming a material over a surface of a substrate; b) providing a substantially nonporous polishing pad and a chemical composition proximate the material, the material being substantially wettable to the chemical composition, the substrate surface and substantially non-porous polishing pad being substantially non-wettable to the chemical composition; and c) polishing the material with the substantially non-porous polishing pad and the chemical composition. In another aspect, the invention includes a method comprising: a) forming a first silicon dioxide layer over a substrate; b) forming a polysilicon layer over the first silicon dioxide layer, the polysilicon layer having an upper surface; c) forming an opening through the polysilicon layer, through the first silicon dioxide layer, and into the substrate; d) forming a second layer of silicon dioxide within the opening and over the polysilicon layer upper surface, the second layer of silicon dioxide substantially completely filling the opening; and e) polishing the second silicon dioxide from over the polysilicon layer upper surface utilizing a substantially non-porous hydrophobic material polishing pad and a water-comprising chemical composition.

Methods for removing material from microfeature workpieces are disclosed. A method in accordance with one embodiment of the invention includes disposing a surfactant-bearing polishing liquid between a doped silicon material of the microfeature workpiece and a polishing pad material. At least one of the workpiece and the polishing pad material is moved relative to the other to simultaneously and uniformly remove at least some of the doped silicon material from portions of the workpiece having different crystalinities and/or different doping characteristics. The surfactant can include a generally non-ionic surfactant having a relatively low concentration in the polishing liquid, for example, from about 0.001% to about 1.0% by weight.

Monitoring the process of planarizing a workpiece, e.g., conditioning a CMP pad, can present some difficulties. Aspects of this invention provide methods and systems for monitoring and/or controlling such a planarization cycle. For example, a control system may monitor the proximity of a workpiece holder and an abrasion member by measuring the capacitance between a first sensor associated with the workpiece holder and a second sensor associated with the abrasion member. This exemplary control system may adjust a process parameter of the planarization cycle in response to a change in the measured capacitance. This can be useful in endpointing the planarization cycle, for example. In certain applications, the control system may define a pad profile based on multiple capacitance measurements and use the pad profile to achieve better planarity of the planarized surface.

Machines and systems for removing materials from microfeature workpieces using fixed-abrasive mediums. One embodiment of a method for removing material from a microfeature workpiece comprises rubbing the workpiece against a surface of a fixed-abrasive medium having a matrix and abrasive particles attached to the matrix, and sensing a parameter indicative of frictional force at an interface between the workpiece and the surface of the fixed-abrasive medium. This method continues by moving at least one of the workpiece and the fixed-abrasive medium relative to each other in a direction transverse to the interface based on the parameter. For example, the workpiece and/or the fixed-abrasive medium can be vibrated or oscillated to reduce the frictional force and/or maintain a desired relative velocity between the workpiece and the fixed-abrasive medium.

Monitoring the process of planarizing a workpiece, e.g., conditioning a CMP pad, can present some difficulties. Aspects of this invention provide methods and systems for monitoring and/or controlling such a planarization cycle. For example, a control system may monitor the proximity of a workpiece holder and an abrasion member by measuring the capacitance between a first sensor associated with the workpiece holder and a second sensor associated with the abrasion member. This exemplary control system may adjust a process parameter of the planarization cycle in response to a change in the measured capacitance. This can be useful in endpointing the planarization cycle, for example. In certain applications, the control system may define a pad profile based on multiple capacitance measurements and use the pad profile to achieve better planarity of the planarized surface.