A guiding frame, with a carrier (10) provided with a fastening groove (11) and carrying at least one guiding rail (12) disposed parallel to said carrier and secured in a fastening groove (11), and on which rests a guiding bearing (13) that guides a sliding part (22). The guiding frame is implemented so that the substantially rectangular guiding rail (12) is supported via a rounded portion on the supporting edges that delimit the fastening groove (11) or on an intermediate bearing that bridges the fastening groove (11).
An integrated circuit is fabricated with a layer of polysilicon located on top of shallow trench regions. The polysilicon is patterned so that the trench features are not exposed during an etching operation performed on the polysilicon layer. The process of fabricating transistor gate electrodes, therefore, is improved by reducing etch byproducts contributed by the shallow trench region features.
