A method for fabricating a microactuator for an inkjet head, which achieves easy formation of oxide piezoelectric elements and upper electrodes having desired patterns, using a patterning process mainly used in the fabrication of semiconductor devices. The method includes the steps of sequentially laminating a vibrating plate, a lower electrode, an oxide piezoelectric sheet, and an electrode layer, patterning the electrode layer, thereby forming upper electrodes of a desired pattern, and patterning the oxide piezoelectric sheet in accordance with an etching process while using the upper electrodes as a mask, thereby forming oxide piezoelectric elements of a desired pattern. Alternatively, the method includes the steps of sequentially laminating a lower electrode and an oxide piezoelectric sheet over a vibrating plate, patterning the oxide piezoelectric sheet in accordance with an etching process, thereby forming oxide piezoelectric elements of a desired pattern, depositing an electrode layer over the resulting structure, and patterning the electrode layer while using the piezoelectric elements as a mask, thereby forming upper electrodes of a desired pattern.
The present invention relates to a membraneless piezoelectric/electrostrictive microactuator comprising: a chamber; a chamber plate in which the chamber is formed; a lower electrode formed on the chamber plate and covering the chamber; a bonding layer formed between the chamber plate and the lower electrode and bonding the chamber plate and the lower electrode; a piezoelectric/electrostrictive film formed on the lower electrode and vibrating when electrified; and an upper electrode formed on the piezoelectric/electrostrictive film, and a manufacturing method thereof, which is membraneless so that structure is simple so that manufacturing method is simple and production cost is reduced to effect eventually the productivity improvement, so also which produces effect of reliability and yield ratio improvement as it is membraneless so that there occur no deformation, crack or void at the bonding part of vibration plate and piezoelectric/electrostrictive film.
An inkjet printer head actuator including a vibrating plate having a flat plate shape, a chamber plate coupled to the vibrating plate, the chamber plate having chamber walls defining a plurality of uniformly spaced chambers each having a horizontal cross-sectional area decreasing gradually, as it extends one end thereof arranged toward the vibrating plate to the other end thereof arranged away from the vibrating plate, each of the chamber walls having a horizontal cross-sectional area increasing gradually as it extends one end thereof arranged toward the vibrating plate to the other end thereof arranged away from the vibrating plate, and a plurality of drive means attached to a surface of the vibrating plate opposite to the chamber plate at regions corresponding to the chambers, respectively. In this structure, the resistance moment caused by the bonding force of the chamber plate at the chamber wall end arranged away from the vibrating plate is greater than the total moment generated by each of the drive means.
In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.
