An invention is provided for an implanter tool process parameter setup system. The implanter tool process parameter setup system includes a first sensor capable of obtaining a first lot identifier (ID) from a first POD, and a controller that is in communication with an implanter tool. The controller is capable of adjusting parameters of the implanter tool based on a process recipe. Further included in the system is a database that stores a plurality of lot IDs and a plurality of process recipes, wherein each lot ID corresponds to a particular process recipe. A computer is in communication with the first sensor, the controller, and the database, wherein the computer is capable of obtaining a process recipe corresponding to the first lot ID from the database, and wherein the computer is further capable of providing the process recipe to the controller.

A method for configuring a plasma cluster tool is disclosed. The method includes generating a key file from option specifications, the key file encapsulating configuration restrictions specifically imposed on the plasma cluster tool. The method also includes generating at least one system-wide configuration file and at least one component-level configuration file using the key file. The method additionally includes generating run-time executable objects from a database of option definition files, the at least one system-wide configuration file and the at least one component-level configuration file. Furthermore, the method includes employing the run-time executable objects to configure the plasma cluster tool.

An integrated metrology and lithography/etch system and method (10) for micro-electronics device manufacturing. A process control neural network (30) is used to develop an estimated process control parameter (32) for controlling an etching process (28). The process control neural network is responsive to a multi-parameter characterization of a patterned resist feature MPC(PR) (16) developed on a substrate. The process control parameter is used as a feed-forward control for the etching process to develop an actual final mask feature. A multi-parameter characterization of the actual final mask feature MPC(HM) (36) is used as an input to a training neural network (40) for mapping to an ideal process control parameter. The ideal process control parameter is compared to the estimated control parameter to develop an error parameter (46), which is then used to train the process control neural network.

A method for configuring a specific plasma cluster tool having a plurality of modules. The method includes providing a set of module option definition files, the set of module option definition files containing generic configuration definitions for generic plasma cluster tools. The method further includes providing a set of tool-specific protection information, the set of tool-specific protection information including data that specifically identifies the particular plasma cluster tool for which the configuring is intended. The method further includes providing a set of tool-specific options specifications, the set of tool-specific options specifications specifying options that are specified for the specific plasma cluster tool. The method additionally includes generating a key file, the key file encapsulating configuration restrictions imposed on the specific plasma cluster tool, the key file being configured to be a required file in the configuring the specific plasma tool.

A semiconductor manufacturing apparatus is improved so that apparatus operating condition parameters can be restored to setting values of various levels such as standard, apparatus delivery time or client oriented setting values even if the parameters are overwritten. The semiconductor manufacturing apparatus is constituted by a multi-chamber processing system 4, a transport system 8 of an object and an equipment control unit 210 having a memory apparatus 214 storing the apparatus operating condition parameters and providing the parameters to machine control units 150, 72. The machine control units 150, 72 controls the processing system 4 and the transport system 8 based on the apparatus operating condition parameters. The equipment control system 210 stores the apparatus operating condition parameters in the memory apparatus 214 for each level provided with a priority level from a standard level peculiar to the apparatus to a specific level peculiar to a user, and the equipment control system 210 develops the apparatus operating condition parameters stored in the memory apparatus on a memory 210 of the machine control units 150, 72 in an order of priority levels.