A MOSFET is fabricated by forming a trench in a semiconductor substrate, forming an insulating film in the trench, forming a gate electrode to fill in the trench, forming a gate oxide on the gate electrode, the insulating film and an adjacent portion of the semiconductor substrate, forming a first silicon film on the semiconductor substrate and on a portion of the gate oxide, and forming a second silicon film on a portion of the gate oxide on which the first silicon film is not formed. Since the thusly fabricated MOSFET has a controlled channel length, modeling of the device can be easily achieved and its mass-producibility is improved.
A MOSFET is fabricated by forming a trench in a semiconductor substrate, forming an insulating film in the trench, forming a gate electrode to fill in the trench, forming a gate oxide on the gate electrode, the insulating film and an adjacent portion of the semiconductor substrate, forming a first silicon film on the semiconductor substrate and on a portion of the gate oxide, and forming a second silicon film on a portion of the gate oxide on which the first silicon film is not formed. Since the thusly fabricated MOSFET has a controlled channel length, modeling of the device can be easily achieved and its mass-producibility is improved.
In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.
In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.
