A method for selectively altering a polishing pad adhesive layer includes providing a mask having transparent regions and opaque regions and directing radiation toward the mask so that the radiation passes through the transparent regions and impinges onto the adhesive layer on the polishing pad. The area of the adhesive layer corresponding to the transparent regions of the mask is cured to be less adhesive. The area of the adhesive layer corresponding to the opaque regions remain adhesive.
A polishing pad includes a polishing layer and an adhesive layer. An adhesive bottom surface of the adhesive layer has an air transmitting pathway to collect air that is expelled from under the adhesive bottom surface, which avoids entrapment of air under the adhesive bottom surface.
A method for selectively altering a polishing pad adhesive layer includes providing a mask having transparent regions and opaque regions and directing radiation toward the mask so that the radiation passes through the transparent regions and impinges onto the adhesive layer on the polishing pad. The area of the adhesive layer corresponding to the transparent regions of the mask is cured to be less adhesive. The area of the adhesive layer corresponding to the opaque regions remain adhesive.
A method of forming a layered polishing pad is disclosed. The method includes double-laminating a subpad on opposing sides with respective adhesive layers and bonding a polishing pad top layer to the subpad via the upper adhesive layer. The polishing pad optionally includes a window. Because the subpad is double-laminated, an opening can be formed through both the top and bottom adhesive layers as well as the subpad. Thus, when bonded to a top polishing pad layer having a window, the result is a layered polishing pad with a through optical path that does not include an adhesive layer.
The present invention is directed, in general, to a method of polishing a surface on substrates, such as semiconductor wafers and, more specifically, to a polishing pad suitable for this purpose. The polishing pad comprises a polishing body that includes a cross-linked polymer material, and may be incorporated into a polishing apparatus. Polishing includes positioning the substrate containing at least one layer against the polishing body and polishing the layer.
The present invention is directed, in general, to a method of planarizing a surface on a semiconductor wafer and, more specifically, to a method of altering the properties of polishing pads to improve thermal management during chemical-mechanical planarization, the resulting heat conductive pad and a polishing apparatus that includes the pad. The pad includes a polishing body composed of a thermoconductive polymer comprising an substrate and filler particle containing a Group II salt and within the substrate.
