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Low noise, high frequency solid state diode
   
Document Number
US Patent 6303975
Issued Date
October 16, 2001
Link
Inventors
Groves; Robert A. (Poughkeepsie, NY)
Jadus; Dale K. (Wappingers Falls, NY)
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Abstract
A low noise, high frequency solid state diode is provided from a plurality of unit diode cells which are interconnected in parallel. Each of the unit diode cells forms an element of an array having rows and columns of unit diode cells. The diode cells include a base region of polysilicon, forming an anode, and an active cathode region which forms a diode junction with the anode. A plurality of overlapping subcollector regions interconnect the cathode regions, to provide a single, continuous collector for the diode arrays. The base region has a minimum perimeter to area ratio which reduces the resistance of each active diode region. A plurality of cathode contacts are connected to the subcollector through a respective reach region of highly doped semiconductor material. One or more metalization layers connect the cathode regions together, and the anodes of the base regions together. By controlling the size and shape of the base region of polysilicon, the series resistance of the resulting diode is minimized.
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Low noise, high frequency solid state diode - US Patent 6303975 Drawing
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Number of Claims:
19
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Published
October 16, 2001
Application Number
09/436,166
Filed
November 9, 1999
US Classification
257/594   257/51 257/910 257/E27.073 257/E29.327
Int'l Classification
H01L   29/66   (20060101)   H01L   27/102   (20060101)   H01L   29/861   (20060101)  
Examiner
Attorney/Law Firm
Parent Case
CROSS REFERENCE TO RELATED APPLICATIONS The present application relates to U.S. patent application Ser. No. 09/187,243, filed Nov. 6, 1998.
USPTO Field of Search
257/51   257/594   257/910  
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