A ferromagnetic magnetron target contains a pattern of blind holes with a circular cross-section distributed along a sputtering surface thereof. A process produces the target for a given magnetron source with a given tunnel field and includes determining and storing the tunnel field course when individual blind holes are provided in a new target surface, additively superimposing the determined tunnel field course of plural individual blind holes, comparing the resulting tunnel field course with a DESIRED tunnel field course; and changing, as a function of the comparison result, the relative parameter position of one or more of the individual blind holes, or the like to control the working of blind holes into the plane target sputtering surface. An arrangement produces a target from a ferromagnetic material for a given magnetron source with a given tunnel field, with a course addition unit which is operatively connected on the input side of the input unit and which, on the output side, leads to one input of a course comparison unit, at whose second input a desired course can be fed and whose output feeds back to the adjusting inputs at the input unit. The adjusting inputs are operatively connected with an output for the triggering of a blind hole production device for the target.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part of PCT Application No. PCT/CH97/00114 and Swiss Application No. 724/96 filed on Mar. 19, 1997 and Mar. 19, 1996, respectively.
A mosaic or inlaid sputter target design suitable for conventional planar magnetron deposition, RF ionized physical vapor deposition, HCM ionized PVD, ionized metal plasma (IMP) deposition, or self-ionized plasma (SIP) deposition of multi-component alloys for use in integrated circuit metallization. Inlays are inserted within a planar sputter target in the shape of wedges, wires, or buttons to achieve uniform deposition of films on semiconductor substrates during sputtering. Metal alloy strips within a three-dimensional HCM target achieve the same uniform deposition. The deposition leads to the production of CuAl, CuBe, CuB, CuCd, CuCo, CuCr, CuIn, CuPd, CuSn, CuTa, CuTi, CuZr or CuZn alloy films deposited on the wafer. Non-copper films may also be deposited. The inlay-target adjoining surfaces may be machine stepped or tapered to limit wicking from the target backing material.
A cathode for a cluster tool in accordance with the present invention includes a base, a disc-shaped target mounted to the base and a magnetic source for establishing magnetic flux lines through the target. The target further comprises a top plate with a plurality of through holes; and a bottom plate with a plurality of bottom plate openings which interconnect distribution grooves formed in one surface with base face channels formed in the other surface. When the top plate is mated to the bottom plate, a path of fluid communication is established from the base face channels to the through holes to allow for inert gas to pass through the target. During operation, the through holes act as micro-cathodes to more efficiently cause material to be sputtered from the target. Each through hole defines a through hole axis, and the magnetic flux lines are parallel with the through holes axes. This ensures the sputtered material from the hollow cathode leaves the target and impinges on a flat, spaced-apart substrate at a normal angle.
