The method of forming a carbon layer by vapor phase deposition starts a film deposition process of the carbon layer after a surface to be coated with the carbon layer is heated while adjusting a partial pressure of moisture in a film deposition system of the carbon layer to 5.times.10.sup.-6 Torr or less. This carbon layer forming method by means of a vapor phase deposition technique such as sputtering ensures that a high-quality carbon layer having high adhesion to the lower layer and significantly reduced pinholes or cracks is obtained.
Carbonization is achieved and impurity elements are removed by combination of a metal or metalloid compound with a composition exhibiting a carbon residual yield that is substantially not zero after firing, followed by firing at a pressure of no higher than 1.times.10.sup.-2 Pa and a temperature of from 1500.degree. C. to 2200.degree. C.
A thermal head fabricating method forms a lower protective layer made of ceramics for protecting a plurality of heat-generating resistors and electrodes, subjects the lower protective layer to etching processing by a plasma and forms a carbon protective layer on the thus subjected lower protective layer. The etching processing is performed using a mask which defines an area where the carbon protective layer is formed, a protective layer is formed on a surface of the mask, and the protective layer is made of a material which is etched at an extremely slow rate or substantially not etched compared with ceramics composing the lower protective layer and/or which does not impart an adverse effect to the carbon protective layer that is subsequently formed.
A method and apparatus for thermographically evaluating the bond integrity of a sputtering target assembly is described. The method includes applying a heating or cooling medium or energy to one surface of the assembly and acquiring a graphic recording of a corresponding temperature change on the opposing surface of the assembly using an imaging device. Also described is a method of mathematically analyzing the pixel data recorded in each frame to produce an integrated normalized temperature map that represents the bond integrity of the assembly.
Electronic apparatus and methods of forming the electronic apparatus include a silicon lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The silicon lanthanide oxynitride film may be arranged as a layered structure having one or more monolayers. Metal electrodes may be disposed on a dielectric containing a silicon lanthanide oxynitride film.
Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a tantalum lanthanide oxynitride film.
