In one aspect, the invention encompasses a method of utilizing a vaporization surface as an electrode to form a plasma within a vapor forming device. In another aspect, the invention encompasses a method of chemical vapor deposition. A vaporization surface is provided and heated. At least one material is flowed past the heated surface to vaporize the material. A deposit forms on the vaporization surface during the vaporization. The vaporization surface is then utilized as an electrode to form a plasma, and at least a portion of the deposit is removed with the plasma.
The invention includes methods of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. In one implementation, a substrate is provided which has a first substrate surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. The first substrate surface has a first degree of roughness. Within a chamber, the first substrate surface is exposed to a PF.sub.3 comprising atmosphere under conditions effective to form a second substrate surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms which has a second degree of roughness which is greater than the first degree of roughness. The substrate having the second substrate surface with the second degree of roughness is ultimately removed from the chamber.
In one aspect, the invention encompasses a method of utilizing a vaporization surface as an electrode to form a plasma within a vapor forming device. In another aspect, the invention encompasses a method of chemical vapor deposition. A vaporization surface is provided and heated. At least one material is flowed past the heated surface to vaporize the material. A deposit forms on the vaporization surface during the vaporization. The vaporization surface is then utilized as an electrode to form a plasma, and at least a portion of the deposit is removed with the plasma.
The invention includes methods of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. In one implementation, a substrate is provided which has a first substrate surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. The first substrate surface has a first degree of roughness. Within a chamber, the first substrate surface is exposed to a PF.sub.3 comprising atmosphere under conditions effective to form a second substrate surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms which has a second degree of roughness which is greater than the first degree of roughness. The substrate having the second substrate surface with the second degree of roughness is ultimately removed from the chamber.
