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Method for forming semiconductor thin film    
United States Patent6323072   
Link to this pagehttp://www.wikipatents.com/6323072.html
Inventor(s)Yamazaki; Shunpei (Tokyo, JP); Komaya; Jun (Kanagawa, JP); Miyanaga; Akiharu (Kanagawa, JP); Fukunaga; Takeshi (Kanagawa, JP)
AbstractA semiconductor device includes a substrate having an insulating film on its surface, and an active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals parallel to the substrate surface without including crystal boundaries therein, allowing the active layer to consist of the mono-domain region only. The insulating film underlying the active layer has a specific surface configuration of an intended pattern in profile, including projections or recesses. To fabricate the active layer, form a silicon oxide film by sputtering on the substrate. Pattern the silicon oxide film providing the surface configuration. Form an amorphous silicon film by low pressure CVD on the silicon oxide film. Retain in the silicon oxide film and/or the amorphous silicon film certain metallic element for acceleration of crystallization. Perform a first heat treatment to alter the amorphous silicon film to a crystalline silicon film. Then, perform a second heat treatment in the halogen atmosphere forming on the crystalline silicon film a thermal oxide film containing halogen, whereby the crystalline silicon film alters to a mono-domain region.



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Drawing from US Patent 6323072
Method for forming semiconductor thin film - US Patent 6323072 Drawing
Method for forming semiconductor thin film
Inventor     Yamazaki; Shunpei (Tokyo, JP); Komaya; Jun (Kanagawa, JP); Miyanaga; Akiharu (Kanagawa, JP); Fukunaga; Takeshi (Kanagawa, JP)
Owner/Assignee     Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-Ken, JP)
Patent assignment
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Publication Date     November 27, 2001
Application Number     09/571,500
PAIR File History     Application Data   Transaction History
Image File Wrapper   Patent Term   Fees
Litigation
Filing Date     May 15, 2000
US Classification     438/166 148/DIG.1 257/E21.133 257/E21.703 257/E27.085 257/E27.1 257/E27.112 438/150 438/151 438/479 438/482 438/486
Int'l Classification     H01L 021/00 H01L 021/84
Examiner     Smith; Matthew
Assistant Examiner     Lytle; Craig P.
Attorney/Law Firm     Fish & Richardson P.C.
Address
Parent Case     This application is a divisional of U.S. application Ser. No. 08/802,276, filed Feb. 19, 1997, now U.S. Pat. No. 6,093,937.
Priority Data     Feb 23, 1996[JP]8-61897 Feb 23, 1996[JP]8-61898
USPTO Field of Search     438/149 438/150 438/151 438/166 438/162 438/164 438/198 438/260 438/479 438/486 438/482 438/592 438/665 438/964 117/3 117/962 117/913 148/DIG. 1 148/DIG. 138
Patent Tags     forming semiconductor thin film
   
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 U.S. References
 
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5893730
Yamazaki

Apr,1999

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Yamazaki
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 Technical Review Submit all comments and votes
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What is claimed is:

1. A method of manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate;

patterning said insulating film to form a pattern on the insulating film;

forming an amorphous semiconductor film over said pattern;

providing said amorphous semiconductor film with a crystallization promoting material comprising a metal;

heating said amorphous semiconductor film to crystallize said semiconductor film wherein the crystallization of said semiconductor film occurs in accordance with a mask.

2. The method according to claim 1 wherein said insulating film comprises silicon oxide.

3. The method according to claim 1 wherein said amorphous semiconductor film comprises silicon.

4. The method according to claim 1 wherein said metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au.

5. The method according to claim 1 wherein said semiconductor device is an EL device.

6. The method according to claim 1 wherein said semiconductor device is one selected from the group consisting of a head-mount display, a motor vehicle navigation apparatus, a portable telephone, a video camera and a projection apparatus.

7. A method of manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate;

patterning said insulating film to form a pattern on the insulating film;

forming an amorphous semiconductor film over said pattern;

providing said amorphous semiconductor film with a crystallization promoting material comprising a metal;

heating said amorphous semiconductor film to crystallize said semiconductor film wherein the crystallization of said semiconductor film occurs in accordance with a mask; and

heating the crystallized semiconductor film in an oxidizing atmosphere to oxidize a surface of the crystallized semiconductor film.

8. The method according to claim 7 wherein said insulating film comprises silicon oxide.

9. The method according to claim 7 wherein said amorphous semiconductor film comprises silicon.

10. The method according to claim 7 wherein said metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au.

11. The method according to claim 7 wherein said oxidizing atmosphere contains a halogen.

12. The method according to claim 7 wherein said semiconductor device is an EL device.

13. The method according to claim 7 wherein said semiconductor device is one selected from the group consisting of a head-mount display, a motor vehicle navigation apparatus, a portable telephone, a video camera and a projection apparatus.

14. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

patterning said insulating film to form a pattern on the insulating film;

forming an amorphous semiconductor film over said pattern;

providing said amorphous semiconductor film with a crystallization promoting material comprising a metal;

heating said amorphous semiconductor film to crystallize said semiconductor film wherein the crystallization of said semiconductor film occurs in accordance with a mask;

patterning the crystallized semiconductor film into at least one semiconductor island; and

forming a second insulating film on said crystallized semiconductor film; and

heating the crystallized semiconductor film in an oxidizing atmosphere after the formation of the second insulating film so that a surface of the crystallized semiconductor film is oxidized.

15. The method according to claim 14 wherein said second insulating film is formed by CVD or PVD.

16. The method according to claim 14 wherein said second insulating film comprises a material selected from the group consisting of silicon oxide and silicon nitride.