Method for forming semiconductor thin film

Claims

What is claimed is:

1. A method of manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate;

patterning said insulating film to form a pattern on the insulating film;

forming an amorphous semiconductor film over said pattern;

providing said amorphous semiconductor film with a crystallization promoting material comprising a metal;

heating said amorphous semiconductor film to crystallize said semiconductor film wherein the crystallization of said semiconductor film occurs in accordance with a mask.

2. The method according to claim 1 wherein said insulating film comprises silicon oxide.

3. The method according to claim 1 wherein said amorphous semiconductor film comprises silicon.

4. The method according to claim 1 wherein said metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au.

5. The method according to claim 1 wherein said semiconductor device is an EL device.

6. The method according to claim 1 wherein said semiconductor device is one selected from the group consisting of a head-mount display, a motor vehicle navigation apparatus, a portable telephone, a video camera and a projection apparatus.

7. A method of manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate;

patterning said insulating film to form a pattern on the insulating film;

forming an amorphous semiconductor film over said pattern;

providing said amorphous semiconductor film with a crystallization promoting material comprising a metal;

heating said amorphous semiconductor film to crystallize said semiconductor film wherein the crystallization of said semiconductor film occurs in accordance with a mask; and

heating the crystallized semiconductor film in an oxidizing atmosphere to oxidize a surface of the crystallized semiconductor film.

8. The method according to claim 7 wherein said insulating film comprises silicon oxide.

9. The method according to claim 7 wherein said amorphous semiconductor film comprises silicon.

10. The method according to claim 7 wherein said metal is selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au.

11. The method according to claim 7 wherein said oxidizing atmosphere contains a halogen.

12. The method according to claim 7 wherein said semiconductor device is an EL device.

13. The method according to claim 7 wherein said semiconductor device is one selected from the group consisting of a head-mount display, a motor vehicle navigation apparatus, a portable telephone, a video camera and a projection apparatus.

14. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

patterning said insulating film to form a pattern on the insulating film;

forming an amorphous semiconductor film over said pattern;

providing said amorphous semiconductor film with a crystallization promoting material comprising a metal;

heating said amorphous semiconductor film to crystallize said semiconductor film wherein the crystallization of said semiconductor film occurs in accordance with a mask;

patterning the crystallized semiconductor film into at least one semiconductor island; and

forming a second insulating film on said crystallized semiconductor film; and

heating the crystallized semiconductor film in an oxidizing atmosphere after the formation of the second insulating film so that a surface of the crystallized semiconductor film is oxidized.

15. The method according to claim 14 wherein said second insulating film is formed by CVD or PVD.

16. The method according to claim 14 wherein said second insulating film comprises a material selected from the group consisting of silicon oxide and silicon nitride.