This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10.sup.15 bits/cm.sup.3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is related to an application entitled "High Density Non-Volatile Memory Device Incorporating Thiol-Derivatized Porphyrins" (Ser. No. 09/346,221), filed on Jul. 1, 1999, naming Daniel Tomasz Gryko, Peter Christian Clausen, David F. Bocian, Werner G. Kuhr, and Jonathan S. Lindsey as inventors, which is herein incorporated by reference in its entirety for all purposes.
A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of ##STR00001## in which R.sub.1 and R.sub.4, independently of one another, may have the following meaning: --H, -alkyl, -aryl, -heteroaryl, --O-alkyl, --O-aryl, --O-heteroaryl, --SH, --S-alkyl, --S-aryl, --S-heteroaryl, --CO-alkyl, --CO-aryl, --CO-heteroaryl, --CS-alkyl, --CS-aryl, --CS-heteroaryl, -halogen, --CN and/or --NO.sub.2, in which R.sub.1 and R.sub.2, R.sub.2 and R.sub.3, R.sub.3 and R.sub.4 together may form a ring, (b) a compound of the general formula II: ##STR00002## in which R.sub.5 to R.sub.7, independently of one another, may have the following meaning: --H, -alkyl, -aryl, -heteroaryl, --O-alkyl, --O-aryl, --O-heteroaryl, --NH.sub.2, --N(alkyl).sub.2, --N(aryl).sub.2, --N(heteroaryl).sub.2, --SH, --S-alkyl, --S-aryl, --S-heteroaryl, --CO-alkyl, --CO-aryl, --CO-heteroaryl, --CS-alkyl, --CS-aryl, --CS-heteroaryl, -halogen, --CN and/or --NO.sub.2, in which R.sub.5 and R.sub.6 or R.sub.7 and R.sub.8 together may form a ring, and optionally (c) a polymer.A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.
A photolithographic method of making an information storage device having different storage characteristics at a plurality of discrete memory locations thereon, comprises the steps of: (a) providing a substrate having a surface portion, said surface portion having a linking group coupled thereto or charge storage group coupled thereto, said linking group or charge storage group having a photocleavable protecting group thereon; (b) exposing at least one first discrete segment of said surface portion to radiant energy sufficient to cleave said protecting group from said linking group or charge storage group and generate a deprotected group, so that said group is deprotected in at least one first discrete memory location and preferably said group remains protected in at least one second discrete memory location. Additional groups are then coupled to the deprotected group as desired. Products produced by such methods are also described.
A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.
An electronic junction of the present invention comprises: (a) a first conductive component comprising: (i) a substrate having a contact surface; and (ii) at least one layer of molecular units having first and second ends, wherein at least one layer of molecular units is attached through their first ends to the contact surface through a type of association selected from the group consisting of: covalent bonding and strong electronic coupling; and (b) a second conductive component in electrical contact with the second ends of at least one layer of molecular units, the second conductive component comprising at least one metal and at least one metal oxide, wherein at least one conductive component in electronic junction has an electrical property that changes in response to a stimulus.
