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Claims  |
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We claim:
1. A package having an integral window for packaging at least one
microelectronic device, comprising:
a first electrically insulating plate comprising a multilayered material
having a first surface, an opposing second surface, and a first aperture
disposed through said first plate;
an electrically conductive metallized trace disposed on the second surface
of said first plate;
an integral window disposed across the first aperture and bonded to said
first plate, for providing optical access to a microelectronic device
disposed within said assembly, wherein the geometry of the joint between
the window and the first plate comprises an encased joint geometry; and
a second electrically insulating plate having a third surface, an opposing
fourth surface, and a second aperture disposed through said second plate;
wherein the first plate is attached to the second plate by joining the
second surface to the third surface; and
wherein the second aperture is larger than the first aperture.
2. The package of claim 1, wherein said first aperture comprises a
polygonal or circular shape.
3. The package of claim 1, wherein said second aperture comprises a
polygonal or circular shape.
4. The package of claim 1, wherein said window is bonded inside of the
first aperture.
5. The package of claim 1, wherein said window comprises an optically
transparent material selected from the group consisting of glass,
sapphire, fused silica, plastic, and polymer.
6. The package of claim 1, further comprising a surface treatment to
improve wettability and adhesion of mating surfaces.
7. The package of claim 1, wherein said window comprises an anti-reflection
coating.
8. The package of claim 1, wherein said window comprises means for
filtering selected wavelengths of light.
9. The package of claim 1, wherein said plates comprise a dielectric
material selected from the group consisting of a ceramic, a polymer, a
plastic, a glass, a glass-ceramic composite, a glass-polymer composite, a
resin material, a fiber-reinforced composite, a glass-coated metal, a
printed wiring board composition, and combinations thereof.
10. The package of claim 1, wherein the second plate comprises the same
multilayered material as the multilayered material of the first plate.
11. The package of claim 10, wherein said multilayered material comprises a
low-temperature cofired ceramic multilayered material fired at a
temperature in the range of 600 C. to 1000 C.
12. The package of claim 1, further comprising a bond pad electrically
attached to said metallized trace at an exterior interconnect location.
13. The package of claim 1, further comprising an electrical lead
electrically attached to said metallized trace at an exterior interconnect
location.
14. The package of claim 1, further comprising a bond pad electrically
attached to said metallized trace at an interior interconnect location.
15. The package of claim 14, further comprising an interconnect bump
disposed on said bond pad.
16. The package of claim 15, wherein said interconnect bump comprises an
electrically conductive material selected from the group consisting of
gold, gold alloys, aluminum, solder, and silver-filled epoxy.
17. The package of claim 1, further comprising a bonding material
consisting of a material selected from the group of a hermetic sealant and
an adhesive.
18. The package of claim 1, further comprising electrically conductive vias
disposed within said electrically insulating plates, for conducting
electrical signals in a direction generally perpendicular to the plane of
said plates.
19. The package of claim 1, further comprising a microelectronic device
mounted within said package.
20. The package of claim 19, wherein said microelectronic device is a
device selected from the group consisting of a semiconductor chip, a CCD
chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, and a IMEMS
device.
21. The package of claim 20, wherein said microelectronic device is mounted
to the second surface.
22. The package of claim 19, wherein said microelectronic device is
flip-chip mounted to the second surface.
23. The package of claim 19, wherein said microelectronic device comprises
a light-sensitive side.
24. The package of claim 23, wherein said light-sensitive side is mounted
facing said window.
25. The package of claim 19, further comprising a cover lid bonded to the
package, for covering and sealing said package.
26. The package of claim 25, wherein the ambient air inside said package
has been substantially removed and replaced with at least one gas other
than air.
27. The package of claim 19, further comprising a seal disposed in-between
said microelectronic device and the second surface.
28. The package of claim 1, wherein said window comprises silicon.
29. The package of claim 1, wherein said window comprises a metal or metal
alloy. |
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Claims  |
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Description  |
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CROSS-REFERENCE TO RELATED APPLICATIONS
This application is related to a co-pending application "Method of
Fabricating a Microelectronic Device Package with an Integral Window", by
Kenneth A. Peterson and Robert D. Watson.
BACKGROUND OF THE INVENTION
The present invention relates generally to the field of microelectronics,
and more specifically to packaging of microelectronic devices in a package
having an integral window.
Many different types of microelectronic devices require a window to provide
optical access and protection from the environment. Examples of
optically-interactive semiconductor devices include charge-coupled devices
(CCD), photo-sensitive cells (photocells), solid-state imaging devices,
and UV-light sensitive Erasable Programmable Read-Only Memory (EPROM)
chips. All of these devices use microelectronic devices that are sensitive
to light over a range of wavelengths, including ultraviolet, infrared, and
visible. Other types of semiconductor photonic devices emit light, such as
laser diodes and Vertical Cavity Surface-Emitting Laser (VCSELS), which
also need to pass light through a protective window.
Microelectromechanical systems (MEMS) and Integrated MEMS (IMEMS) devices
(e.g. MEMS devices combined with Integrated Circuit (IC) devices) can also
require a window for optical access. Examples of MEMS devices include
airbag accelerometers, microengines, microlocks, optical switches,
tiltable mirrors, miniature gyroscopes, sensors, and actuators. All of
these MEMS devices use active mechanical and/or optical elements. Some
examples of active MEMS structures include gears, hinges, levers, slides,
tilting mirrors, and optical sensors. These active structures must be free
to move or rotate. Optical access through a window is required for MEMS
devices that have mirrors and optical elements. Optical access to
non-optically active MEMS devices can also be required for inspection,
observation, and performance characterization of the moving elements.
Additionally, radiation detectors which detect alpha, beta, and gamma
radiation, use "windows" of varying thickness and materials to either
transmit, block, or filter these energetic particles. These devices also
have a need for windows that transmit or filter radiation to and from the
device, while at the same time providing physical and environmental
protection.
The word "transparent" is broadly defined herein to include transmission of
radiation (e.g. photons and energetic particles) covering a wide range of
wavelengths and energies, not just UV, IR, and visible light. Likewise,
the word "window" is broadly defined herein to include materials other
than optically transparent glass, ceramic, or plastic, such as thin sheets
of metal, which can transmit energetic particles (e.g. alpha, beta, gamma,
and light or heavy ions).
There is a continuing need in the semiconductor fabrication industry to
reduce costs and improve reliability by reducing the number of fabrication
steps, while increasing the density of components. One approach is to
shrink the size of packaging. Another is to combine as many steps into one
by integrating operations. A good example is the use of cofired multilayer
ceramic packages. Unfortunately, adding windows to these packages
typically increases the complexity and costs.
Hermetically sealed packages are used to satisfy more demanding
environmental requirements, such as for military and space applications.
The schematic shown in FIG. 1 illustrates a conventional ceramic package
for a MEMS device, a CCD chip, or other optically active microelectronic
device. The device or chip is die-attached face-up to a ceramic package
and then wirebonded to interconnect inside of the package. Metallized
circuit traces carry the electrical signal through the ceramic package to
electrical leads mounted outside. A glass window is attached as the last
step with a frit glass or solder seal. Examples of conventional ceramic
packages include Ceramic Dual In-Line Package (CERDIP), EPROM and Ceramic
Flatpack designs.
Although stronger, ceramic packages are typically heavier, bulkier, and
more expensive to fabricate than plastic molded packages. Problems with
using wirebonding include the fragility of very thin wires; wire sweep
detachment and breakage during transfer molding; additional space required
to accommodate the arched wire shape and toolpath motion of the wirebond
toolhead; and the constraint that the window (or cover lid) be attached
after the wirebonding step. Also, attachment of the window as the last
step can limit the temperature of bonding the window to the package.
FIG. 2 illustrates schematically a conventional molded plastic (e.g.
encapsulated) microelectronic package. The chip is attached to a lead
frame, and a polymer dam prevents the plastic encapsulant from flowing
onto the light-sensitive area of the chip during plastic transfer molding.
The window is generally attached with a polymer adhesive. Problems with
this approach include the use of fragile wirebonded interconnections; and
plastic encapsulation, which does not provide hermetic sealing against
moisture intrusion.
Flip-chip mounting of semiconductor chips is a commonly used alternative to
wirebonding. In flip-chip mounting the chip is mounted face-down and then
reflow soldered using small solder balls or "bumps" to a substrate having
a matching pattern of circuit traces (such as a printed wiring board). All
of the solder joints are made simultaneously. Excess spreading of the
molten solder ball is prevented by the use of specially-designed bonding
pads. Flip-chip mounting has been successfully used in fabricating
Multi-Chip Modules (MCM's), Chip-on-Board, Silicon-on-Silicon, and Ball
Grid Array packaging designs.
Flip-chip mounting has many benefits over traditional wirebonding,
including increased packaging density, lower lead inductance, shorter
circuit traces, thinner package height, no thin wires to break, and
simultaneous mechanical die-attach and electrical circuit interconnection.
Another advantage is that the chips are naturally self-aligning due to
surface tension when using molten solder balls. It is also possible to
replace the metallic solder bumps with bumps, or dollops, of an
electrically-conductive polymer or epoxy (e.g. silver-filled epoxy).
Flip-chip mounting avoids potential problems associated with ultrasonic
bonding techniques that can impart stressful vibrations to a fragile (e.g.
released) MEMS structure.
Despite the well-known advantages of flip-chip mounting, this technique has
not been widely practiced for packaging of MEMS devices, Integrated MEMS
(IMEMS), or CCD chips because attaching the chip face-down to a solid,
opaque substrate prevents optical access to the optically-active,
light-sensitive surface.
The cost of fabricating ceramic packages can be reduced by using cofired
ceramic multilayer packages. Multilayer packages are presently used in
many product categories, including leadless chip carriers, pin-grid arrays
(PGA's), side-brazed dual-in-line packages (DIP's), flatpacks, and leaded
chip carriers. Depending on the application, 5-40 layers of dielectric
layers can be used, each having printed signal traces, ground planes, and
power planes. Each signal layer can be connected to adjacent layers above
and below by conductive vias passing through the dielectric layers.
Electrically conducting metallized traces, thick-film resistors, and
solder-filled vias or Z-interconnects are conventionally made by
thick-film metallization techniques, including screen-printing. Multiple
layers are printed, vias-created, stacked, collated, and registered. The
layers are then joined together (e.g. laminated) by a process of burnout,
followed by firing at elevated temperatures. Burnout at 350-600 C. first
removes the organic binders and plasticizers from the substrate layers and
conductor/resistor pastes. After burnout, these parts are fired at much
higher temperatures, which sinters and densifies the glass-ceramic
substrate to form a dense and rigid insulating structure. Glass-forming
constituents in the layers can flow and fill-in voids, corners, etc.
Two different cofired ceramic systems are conventionally used, depending on
the choice of materials: high-temperature cofired ceramic (HTCC), and
low-temperature cofired ceramic (LTCC). HTCC systems typically use alumina
substrates; are printed with molybdenum-manganese or tungsten conducting
traces; and are fired at high temperatures, from 1300 C. to 1800 C. LTCC
systems use a wide variety of glass-ceramic substrates; are printed with
Au, Ag, or Cu metallizations; and are fired at lower temperatures, from
600 C. to 1300 C. After firing, the semiconductor die is attached to the
fired HTCC (or LTCC) body; followed by wirebonding. Finally, the package
is lidded and sealed by attaching a metallic, ceramic, or glass cover lid
with a braze, a frit glass, or a solder seal, depending on the hierarchy
of thermal processing and on performance specifications.
Use of cofired multilayer ceramic structures for semiconductor packages
advantageously permits a wide choice of geometrical designs and processing
conditions, as compared to previous use of bulk ceramic pieces (which
typically had to be cut and ground from solid blocks or bars). Ceramic
packages with high-temperature seals are generally stronger and have
improved hermeticity, compared to plastic encapsulated packages. It is
well known to those skilled in the art that damaging moisture can
penetrate polymer-based seals over time. Also, metallized conductive
traces are more durable than freestanding wire bond segments, especially
when the traces are embedded and protected within a layer of insulating
material.
In summary, conventional methods and designs for packaging of
light-sensitive microelectronic devices attach the window (or cover lid
containing a window) after completing the steps of die attachment and
wirebonding of the chip or MEMS device to the package. Many processing
steps are used, which can expose the fragile MEMS structures to
particulate contamination and mechanical damage during packaging.
What is needed is a packaging process that minimizes the number of times
that a MEMS device is handled and exposed to temperature cycles and
different environments, which can possibly lead to contamination of the
device. This can be accomplished by performing as many of the package
fabrication steps as possible before mounting the MEMS device. What is
needed, then, is a packaging process that attaches the window to the
package before mounting the chip to the package. It is also desired that
the window be attached to the package body at a high temperature to
provide a strong, hermetic bond between the window and the body. What also
is needed is a method where the MEMS device faces away from the cover lid,
so that contamination is reduced when the cover lid is attached last.
Electrical interconnections from the chip to the package are needed that
are stronger and less fragile than conventional wirebonds. What also is
needed is a package having a high degree of strength and hermeticity. In
some cases, it is also desired to stack back-to-back multiple chips, of
different types (e.g. CMOS, MEMS, etc.) inside of a single,
windowed-package.
Use of the phrase "MEMS devices" is broadly defined herein to include
"IMEMS" devices, unless specifically stated otherwise. The word "plastic"
is broadly defined herein to include any type of flowable, dielectric
composition, including polymer compounds and spin-on glass-polymer
compositions. The phrases "released MEMS structures", "released MEMS
elements", and "active MEMS elements" and "active MEMS structures" are
used interchangeably to refer to a device having freely-movable structural
elements, such as gears, pivots, hinges, sliders, tilting mirrors; and
also to exposed active elements such as chemical sensors, flexible
membranes, and beams with thin-film strain gauges, which are used in
accelerometers and pressure sensors.
BRIEF DESCRIPTION OF THE DRAWINGS
The accompanying drawings, which are incorporated in and form part of the
specification, illustrate various examples of the present invention and,
together with the description, serve to explain the principles of the
invention.
FIG. 1 shows a schematic cross-section view of a conventional ceramic
microelectronic package, where the window or cover lid is attached last,
after the microelectronic device has been joined (face-up) to the base and
wirebonded.
FIG. 2 shows a schematic cross-section view of a conventional plastic
molded microelectronic package, where the microelectronic device, lead
frame, and window are encapsulated in a plastic body by a transfer molding
process.
FIG. 3A shows a schematic cross-section view of a first example of a
microelectronic package according to the present invention, with the
package having an integral window attached to a ceramic body including an
first (lower) plate, a second (upper) plate, and an attached cover lid.
FIG. 3B shows a schematic cross-section view of the second example of a
microelectronic package according to the present invention, with the
package having an integral window cofired with a cofired multilayered
assembly of twelve individual layers, and an attached cover lid.
FIG. 4A shows a schematic cross-section view of a third example of a
microelectronic package according to the present invention that is similar
to the second example of FIG. 3B, but with a cofired window substantially
filling up the aperture through the first plate.
FIG. 4B shows a schematic cross-section view of a fourth example of a
microelectronic package according to the present invention that is similar
to the second example of FIG. 3B, but with a cofired window mounted to a
recessed lip located inside of the first plate, recessed from the second
surface of the first plate.
FIG. 4C shows a schematic cross-section view of a fifth example of a
microelectronic package according to the present invention that is similar
to the second example of FIG. 3B, but with a window mounted flush to the
bottom surface of the first plate.
FIG. 5 shows a schematic cross-section view of a sixth example of a
microelectronic package according to the present invention, with the
package having an integral window cofired to a cofired multilayered
assembly including an first (bottom) plate, a second (middle) plate, a
third (top) plate, and an attached cover lid, for packaging a pair of
stacked chips, including a MEMS chip flip-chip mounted to the first plate,
and a second chip attached to the backside of the MEMS chip, wirebonded to
the second plate.
FIG. 6A shows a schematic cross-section view of a seventh example of a
microelectronic package according to the present invention that is similar
to the first example of FIG. 3A, but with the cover plate removed, and
also having a second package, substantially identical to the first example
of FIG. 3A (also without a cover plate), where the second package has been
inverted and joined to the first package, thereby forming a substantially
symmetric package.
FIG. 6B shows a schematic cross-section view of an eighth example of a
microelectronic package according to the present invention that is similar
to the first example of FIG. 3A, but with the cover plate removed, and
also having a second package, substantially identical to the first example
of FIG. 3A (also without a cover plate), where the second package has been
stacked above the first package and joined to the first package, thereby
forming a stacked, double-package.
FIG. 6C shows a schematic cross-section view of a ninth example of a
microelectronic package according to the present invention that is similar
to the sixth example of FIG. 5, but with the cover plate removed, and also
having a second package, substantially identical to the first example of
FIG. 5 (also without a cover plate), where the second package has been
inverted and joined to the first package, thereby forming a substantially
symmetric package.
FIG. 6D shows a schematic cross-section view of a tenth example of a
microelectronic package according to the present invention that is similar
to the first example of FIG. 5, but with the cover plate removed, and also
having a second package, substantially identical to the first example of
FIG. 5 (also without a cover plate), where the second package has been
stacked above the first package and joined to the first package, thereby
forming a stacked, double-package.
FIG. 7 shows a schematic top view along line 1--1 of FIG. 3A of a sixteenth
example of a microelectronic package for housing at least one
microelectronic device according to the present invention, illustrating
examples of the electrically conducting metallized traces located on the
upper surface of the first plate, including interconnect bumps, interior
bond pads, exterior bond pads, and a conductive via.
FIG. 8 shows a schematic top view of a seventeenth example of a
microelectronic package for housing at least one microelectronic device
according to the present invention, wherein the package can be a
multi-chip module (MCM), including multiple integral windows and multiple
microelectronic devices in a two-dimensional array.
FIG. 9 shows a schematic side view of a eighteenth example of a
microelectronic package for housing at least one microelectronic device
according to the present invention, wherein the window further comprises a
lens for optically transforming light passing through the window.
FIG. 10A shows a schematic side view of an example of a microelectronic
package for housing a microelectronic device, according to the present
invention.
FIG. 10B shows a schematic side view of an example of a microelectronic
package for housing a microelectronic device, according to the present
invention.
FIG. 10C shows a schematic side view of an example of a microelectronic
package for housing a microelectronic device, according to the present
invention.
FIG. 11 shows a schematic side view of an example of a microelectronic
package for housing a microelectronic device, according to the present
invention.
DETAILED DESCRIPTION OF THE INVENTION
The present invention relates to a package for housing at least one
microelectronic device, comprising a hollow assembly of stacked,
electrically insulating plates and an integral window.
It should be noted that the examples of the present invention shown in the
figures are sometimes illustrated with the window facing down, which is
the preferred orientation during flip-chip bonding. However, those skilled
in the art will understand that the completed package can be oriented for
use with the window facing upwards. It should also be noted that all of
the figures show only a single microelectronic device, illustrated as a
microelectronic device or pair of chips. It is intended that the method
and apparatus of the present invention should be understood by those
skilled in the art as applying equally to a plurality of chips or devices
packaged in a one-dimensional or a two-dimensional array, as in a
multi-chip module (MCM), including multiple windowed-compartments, and
including having a window on either side of the package.
FIG. 3A shows a schematic cross-section view of a first example of a
microelectronic package 8 for housing at least one microelectronic device
according to the present invention, comprising a hollow assembly 10 of
stacked, electrically insulating plates. The assembly 10 of FIG. 3A has an
interior interconnect location 12 disposed on an interior surface of
hollow assembly 10, and an exterior interconnect location 14 disposed on
an exterior surface of assembly 10. Assembly 10 further comprises a first
plate 16. Plate 16 has a first surface 20, an opposing second surface 18,
and a first aperture 22 through plate 16. Plate 16 also has an
electrically conductive metallized trace 24 disposed on surface 18, for
conducting an electrical signal between interior interconnect location 12
and exterior interconnect location 14. Plate 16 further comprises a first
window 26 bonded to plate 16, for providing optical access to a
microelectronic device 100 that could be disposed within assembly 10.
In FIG. 3A, assembly 10 further comprises a second plate 30, which has a
third surface 34, an opposing fourth surface 32, and a second aperture 36
through plate 30 for providing physical access to insert device 100 into
package 8. Surface 18 of plate 16 is bonded to the surface 34 of plate 30
to form assembly 10. At least one lateral dimension of aperture 36 is
slightly larger than the corresponding lateral dimension of aperture 22.
Aperture 22 is substantially aligned with aperture 36. The lateral
dimensions of aperture 36 are slightly larger than the lateral dimensions
of chip or device 100, so that chip or device 100 can fit inside of
aperture 36.
In FIG. 3A, window 26 is attached flush to plate 16. The attachment can
comprise a first seal 38. Other mounting arrangements will be disclosed
later. The shape of aperture 22 and aperture 36 can be polygonal (e.g.
square or rectangular) or circular. Aperture 22 can have a different shape
than aperture 36. The horizontal surfaces of device 100, plate 16, plate
18, and window 26 all can be substantially coplaner. Microelectronic
device 100 can comprise a microelectronic device 100.
In FIG. 3A, microelectronic device 100 can be flip-chip mounted (e.g.
flipped facedown, with optically active area 109 of chip or device 100
facing towards window 26) to surface 18 of plate 16. The method of
flip-chip mounting is well-known to those skilled in the art. Surface 18
can comprise a bond pad 44 electrically connected to metallized trace 24
at interior interconnect location 12. Microelectronic device 100 can
include interconnect bumps pre-attached to chip or device 100.
Alternatively, surface 18 can comprise an interconnect bump 46, connected
either to metallized trace 24 or to bond pad 44 at interior interconnect
location 12. Interconnect bump 46 can comprise an electrically conductive
material (e.g. gold, gold alloy, aluminum, solder, and silver-filled
epoxy) for electrically connecting chip or device 100 to metallized trace
24 or bond pad 44. Alternatively, bump 46 can comprise a non-conducting,
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