A micro cooling and power supply structure is proposed, which includes an emitter end chip having an emitting surface, a collector end chip having a collecting surface that corresponds to the emitting surface and is separated from the emitting surface, and a plurality of micro cantilever beam components formed on the emitting surface. Each micro cantilever beam component has a projecting part as an electron emitter. A distance between the projecting part and the collecting surface is sensed by a sensor component and maintained by an actuating component at an optimal value to produce an electron tunneling effect, so as to lessen the requirement for a planar chip surface and the low work function material. With the capacity of the micro cantilever beam components to position the tunneling distance, the frequency of electron tunneling to the collecting surface is increased, and excellent cooling and power supply efficiency are achieved.

An electronic heat pump device has an emitter and a collector, stems supporting these components, a spacing retention member for keeping a spacing between the stems constant, and a sealing member for maintaining a vacuum between the stems. The emitter has a first semiconductor substrate and an emitter electrode, while the collector has a second semiconductor substrate and a collector electrode. The emitter electrode and the collector electrode are disposed so as to be opposed to each other with a space interposed therebetween. At least one of the first and second semiconductor substrates is integrally formed with electrically and thermally insulative spacers that keep the space between the emitter electrode and the collector electrode constant.

The present invention is a method for reducing nanoscale surface roughness. The method involves exposing the surface to an environment that preferentially promotes evaporation of material from the region of nanoscale roughness. The methods involve either heating the surface, or flushing an inert gas across the surface, or a combination of both.

The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum oxide, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum oxide, and placing the insulator between the collector electrode and the emitter electrode.

A power circuitry with a thermionic cooling system is provided. The system includes a voltage regulator and a heat rectifying device to cool the voltage regulator. The heat rectifying device includes a heat collector and a heat barrier, formed between the voltage regulator and the heat collector. An auxiliary voltage generator enables the electrons of the voltage regulator to tunnel onto the heat collector through the heat barrier. The voltage regulator may include a shared substrate and power transistors, generating a regulated voltage. In some embodiments the controller keeps a temperature in a preselected range by controlling the power transistors, the auxiliary voltage generator, and a fan. In some embodiments a load is integrated together with the thermionic cooling system so that the load itself can be cooled by the heat rectifying device.