An abrasive comprising at least the following components (A) and (B): (A) cerium-containing abrasive grains having an average particle size of from 0.5 to 5.0 .mu.m; and (B) particles having an average particle size of from 0.01 to 0.3 .mu.m, which are particles of at least one member selected from the group consisting of aluminum oxide, silicon dioxide, zirconium oxide, titanium oxide, silicon nitride and manganese oxide.
A polishing compound and a polishing method are provided, whereby in a CMP process in a process for production of a semiconductor device, a metal layer and/or a barrier layer, etc., can be polished while suppressing excessive oxidation of the metal layer, and the polishing rate can be adjusted depending upon the application. A polishing compound comprising polishing abrasive grains and a peptide, a polishing compound slurry having such a polishing compound suspended in an aqueous medium, preferably together with an oxidizing agent and preferably at a pH of at least 7, and a method for polishing a metal layer of e.g. Cu and/or a barrier layer, formed on a semiconductor substrate, by polishing with an abrasive cloth of a CMP apparatus having such a polishing compound slurry supported thereon, are disclosed.
This invention aims to provide a method of manufacturing a cerium-based abrasive containing coarse particles in lower concentration and having higher polishing ability and excellent cleanability for a polished face. Further, the present invention provides a method of manufacturing a cerium-based abrasive, including the steps of pulverizing a raw material, roasting a raw material after pulverization and disintegrating a raw material after roasting, in which a cerium-based rare earth carbonate or a mixture of a cerium-based rare earth carbonate and a cerium-based rare earth oxide is used as a cerium-based abrasive raw material, and the step of pulverizing a raw material pulverizes a raw material through heating while the material is kept immersed in aqueous solution.
The present invention relates to a method of forming an electrode of an apparatus for manufacturing a liquid crystal display (LCD) device, wherein the electrode has a substantially flat surface. A method of forming an electrode of an apparatus for manufacturing a liquid crystal display device includes milling an aluminum plate, wherein the milling comprises roughing, rest roughing and finishing, polishing an upper surface of the aluminum plate by using fine ceramic powder, and anodizing the aluminum plate.
