Method embodiments including providing control information to a memory device is provided. The control information includes a first code which specifies that a write operation be initiated in the memory device. A signal is provided that indicates when the memory device is to begin sampling write data that is stored in the memory core during the write operation. A first bit of the write data is provided to the memory device during an even phase of a clock signal. A second bit of the write data is provided to the memory device during an odd phase of the clock signal.

An apparatus that reduces sampling errors for data communicated between devices uses phase information acquired from a timing reference signal such as a strobe signal to align a data-sampling signal for sampling a data signal that was sent along with the timing reference signal. The data-sampling signal may be provided by adjustably delaying a clock signal according to the phase information acquired from the strobe signal. The data-sampling signal may also have an improved waveform compared to the timing reference signal, including a fifty percent duty cycle and sharp transitions. The phase information acquired from the timing reference signal may also be used for other purposes, such as aligning received data with a local clock domain, or transmitting data so that it arrives at a remote device in synchronism with a reference clock signal at the remote device.

An apparatus that reduces sampling errors for data communicated between devices uses phase information acquired from a timing reference signal such as a strobe signal to align a data-sampling signal for sampling a data signal that was sent along with the timing reference signal. The data-sampling signal may be provided by adjustably delaying a clock signal according to the phase information acquired from the strobe signal. The data-sampling signal may also have an improved waveform compared to the timing reference signal, including a fifty percent duty cycle and sharp transitions. The phase information acquired from the timing reference signal may also be used for other purposes, such as aligning received data with a local clock domain, or transmitting data so that it arrives at a remote device in synchronism with a reference clock signal at the remote device.

A semiconductor memory device has a memory core that includes at least eight banks of dynamic random access storage cells and an internal data bus coupled to the memory core. The internal data bus receives a plurality of data bits from a selected bank of the memory core. The semiconductor memory device further comprises a first interface to receive a read command from external to the semiconductor memory device and a second interface to output first and second subsets of the plurality of data bits. The first subset is output during a first phase of an external clock signal and the second subset is output during a second phase of the external clock signal. The first phase includes a first edge transition and the second phase includes a second edge transition. The second edge transition is an opposite edge transition with respect to the first edge transition.

A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.