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Method of cleaning a polishing pad conditioner and apparatus for performing the same
   
Document Number
US Patent 6481446
Issued Date
November 19, 2002
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Abstract
A polishing pad conditioner cleaning method and an apparatus for effectively removing particles from a polishing pad conditioner. The polishing pad conditioner is immersed into a cleaning liquid contained in a cleaning bath. The cleaning liquid is continuously supplied into the cleaning bath. An inert gas is injected into the cleaning liquid from a bottom of the cleaning bath. The injected inert gas bubbles the cleaning liquid, so that the particles sticking to the polishing pad conditioner are removed and overflow from the cleaning bath. The polishing pad conditioner is effectively cleaned, so that formation of particles and scratches on a wafer are reduced when a polishing process is subsequently carried out using the cleaned polishing pad conditioner.
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Number of Claims:
14
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Published
November 19, 2002
Application Number
09/901,049
Filed
July 10, 2001
US Classification
134/102.2   134/182 134/902
Int'l Classification
B24B   53/007   (20060101)   B24B   37/04   (20060101)  
Examiner
Attorney/Law Firm
Priority Data
Sep 07, 2000 [KR] 2000-53074
USPTO Field of Search
134/102.1   134/102.2   134/182.902  
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6605159 - Device and method for collecting and measuring chemical samples on pad surface in CMP - Owned by Micron Technology, Inc. (Boise, ID)

A chemical collection assembly and a method for using the assembly such that a chemical-mechanical polishing (CMP) pad used in the manufacture of semiconductor wafers can be assessed for cleanliness. The method involves delivering solvent from the assembly's reservoir to an enclosed volume over the CMP pad. The solvent then brings contaminants imbedded on the CMP pad into solution. This solution is then drawn back up from the enclosed volume wherefrom a sample of the solution can be taken. That sample is then analyzed for the level of contaminants present therein, and the analysis is compared to a pre-determined level of cleanliness to determine whether the CMP pad should or should not continue to be used for semiconductor wafer manufacturing.

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