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Method and apparatus for testing SRAM memory cells
 
   
Document Number
US Patent 6507924
Issued Date
January 14, 2003
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Abstract
A write driver circuit includes a drive circuit having a first drive node adapted to receive a first voltage, a second drive node, an input adapted to receive a data signal, and an output. The drive circuit couples the output to the first voltage node when the data signal has a first logic voltage, and couples the output to the second drive node when the data signal has a second logic voltage. A test circuit has an input adapted to receive a test mode signal, and an output coupled to the second drive node. The test circuit develops a first impedance between the second drive node and a second voltage source when the test mode signal is active, and develops a second impedance between the second drive node and the second voltage source when the test mode signal is inactive.
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Method and apparatus for testing SRAM memory cells - US Patent 6507924 Drawing
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Number of Claims:
12
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Published
January 14, 2003
Application Number
09/735,441
Filed
December 12, 2000
US Classification
714/718  
Int'l Classification
G11C   29/04   (20060101)   G11C   29/50   (20060101)  
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Parent Case
CROSS-REFERENCE TO RELATED APPLICATION This application is a Continuation of U.S. patent application Ser. No. 09/024,826, filed Feb. 17, 1998 now U.S. Pat. No. 6,161,204.
USPTO Field of Search
714/718   714/724   714/721   327/276   327/263   327/52   327/53   365/201   365/190   365/202   365/203   365/189.1   365/51   365/63   365/206   365/185.21  
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